초록 ▼

An assembly for adjusting the elevation of a structure such as a manhole or a catch basin to be surrounded by pavement. A one-piece is formed to be inserted between a base rim and a cover of the structure. A lower member of the adapter is received in the base rim to be supported on an internal shoul

An assembly for adjusting the elevation of a structure such as a manhole or a catch basin to be surrounded by pavement. A one-piece is formed to be inserted between a base rim and a cover of the structure. A lower member of the adapter is received in the base rim to be supported on an internal shoulder. An upper member extends outwardly of the lower member to receive the cover and upwardly to engage the upper end of the base rim and form an upward extension of the rim. The elevation of the structure may be increased by inserting the adapter between the base rim shoulder and the cover and decreased by removing the adapter from between the base rim shoulder and the cover. Additional adapters of identical construction may be inserted to further increase the elevation of the structure, all the adapters being nestable within one another.

대표청구항 ▼

An assembly for adjusting the elevation of a structure such as a manhole or a catch basin to be surrounded by pavement. A one-piece is formed to be inserted between a base rim and a cover of the structure. A lower member of the adapter is received in the base rim to be supported on an internal shoul

An assembly for adjusting the elevation of a structure such as a manhole or a catch basin to be surrounded by pavement. A one-piece is formed to be inserted between a base rim and a cover of the structure. A lower member of the adapter is received in the base rim to be supported on an internal shoulder. An upper member extends outwardly of the lower member to receive the cover and upwardly to engage the upper end of the base rim and form an upward extension of the rim. The elevation of the structure may be increased by inserting the adapter between the base rim shoulder and the cover and decreased by removing the adapter from between the base rim shoulder and the cover. Additional adapters of identical construction may be inserted to further increase the elevation of the structure, all the adapters being nestable within one another. he pattern of the pressure chambers in the carbon plate. An orifice plate may have specially profiled orifice openings to assure axial projection of drops and may be affixed by a thin layer of epoxy adhesive to a carbon plate having orifice passages supplying ink from the pressure chambers to the orifices. Since the carbon plate is conductive, it can be used, if desired, as an electrode on the opposite side of the piezoelectric plate and, to assure grounding of the piezoelectric plate, a conductive epoxy adhesive may be used to bond the piezoelectric plate to the carbon plate. Moreover, since the carbon plate is porous, it can provide a communication path between a vacuum source and an air-permeable, ink-impermeable layer on the ink passages to remove dissolved air from the ink in the passages. In one alternative embodiment, an ink jet head assembly contains two separate carbon pressure chamber plates, a carbon manifold plate and a carbon collar to retain the carbon plates in an assembly. hereon at least one first component comprising a DRAM component and at least one second component selected from the group consisting of a device comprising a logic gate, an SRAM component, and a combination thereof; a layer of an insulative material overlaying the silicon substrate, the first component and the second component, wherein a first silicon plug, in electrical contact with the first component, extends through the layer of insulative material to the silicon substrate and a second silicon plug, in electrical contact with the second component, extends through the layer of insulative material to the silicon substrate; an oxide layer overlaying the insulative material; an interconnect comprising tungsten located over, and in electrical contact with, the second silicon plug; and a second interconnect comprising tungsten located over, and in electrical contact with, the first silicon plug, wherein the second silicon plug is a dual plug comprising one section of N-type doped silicon and one section of P-type doped silicon. 8. A system-on-chip comprising: a silicon substrate, the silicon substrate having arrayed thereon at least one first component comprising a DRAM component and at least one second component selected from the group consisting of a device comprising a login gate, an SRAM component and a combination thereof; a layer of an insulative material overlaying the silicon substrate, the first component and the second component, wherein a first silicon plug, in electrical contact with the first component, extends through the layer of insulative material to the silicon substrate, and a second silicon plug, in electrical contact with the second component, extends through the layer of insulative material to the silicon substrate; an oxide layer overlaying the insulative material; an interconnect comprising tungsten located over, and in electrical contact with, the second silicon plug; and a second interconnect comprising tungsten located over, and in electrical contact with, the first silicon plug wherein the second interconnect is a bit-line contact for a capacitor, wherein the second silicon plug is a dual plug comprising one section of N-type doped silicon and on section of P-type doped silicon. 9. A system-on-chip, comprising: a silicon substrate, the silicon substrate having arrayed thereon at least one first component comprising a DRAM component and at least one second component selected from the group consisting of a device comprising a logic gate, an SRAM component, and a combination thereof; a layer of