초록 ▼

A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a

A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.

대표청구항 ▼

1. A method for forming an image on a substrate, said method comprising: a) providing a photoresist composition that is made comprising the steps of: (I) providing a solution of a resist material made by a process comprising reacting (i) at least one alkali-soluble polymer having a phenolic hyd

1. A method for forming an image on a substrate, said method comprising: a) providing a photoresist composition that is made comprising the steps of: (I) providing a solution of a resist material made by a process comprising reacting (i) at least one alkali-soluble polymer having a phenolic hydroxyl or carboxyl group with (ii) at least one vinyl ether compound and/or (iii) at least one dialkyl dicarbonate in the presence of a catalyst in an aprotic solvent suitable as a resist coating solvent in which these materials can be dissolved; wherein step (I) consists of a process that does not isolate or purify the reaction product of (i) and (ii) and/or (iii); (II) thereafter, adding at least one photoacid generator to the solution of the resist material in step (I), to form the resist composition; b) thereafter, coating a suitable substrate with the photoresist composition from step a); c) thereafter, pre-baking the coated substrate; exposing the coated substrate to radiation; and developing with an alkaline developer to form a resist image, whereby a pattern having a line and space resolution of 0.20 μm or less can be obtained. 2. The method of claim 1, wherein the alkali-soluble polymer (I) is a vinyl polymer having at least a recurring unit represented by general formula (I): wherein R1represents a hydrogen atom or an alkyl group, R2represents an alkyl group, and m is 0 or an integer of 1 to 4. 3. The method of claim 1, wherein the alkali-soluble polymer (i) comprises a homo- or co-polymer of acrylic acid or methacrylic acid. 4. The method of claim 1, wherein the alkali-soluble polymer (I) is a phenol resin. 5. The method of claim 1, wherein the vinyl ether compound (ii) is one represented by the formula (III): C(R4(R5)=C(R6)--O--R7 (III) wherein R1,R5and R6represent independently a hydrogen atom or a straight-chain, branched, cyclic or hetero-cyclic alkyl group containing 1 to 6 carbon atoms, and R7represents a straight-chains branched, cyclic or hetero-cyclic alkyl or aralkyl group containing 1 to 10 carbon atoms which may be substituted with a halogen atom, an alkoxy group, aralkyl oxycarbonyl group and/or alkyl carbonyl amino group. 6. The method of claim 1, wherein the vinyl ether compound (ii) comprises at least two vinyl ether compounds. 7. The method of claim 1, wherein the solution of the resist material has a moisture content of 700 ppm or less.