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Protective layers prior to alternating layer deposition 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/4763
출원번호 US-0237526 (2002-09-06)
발명자 / 주소
  • Raaijmakers, Ivo
  • Soininen, Pekka T.
  • Granneman, Ernst H. A.
  • Haukka, Suvi P.
출원인 / 주소
  • ASM International N.V.
대리인 / 주소
    Knobbe, Martens, Olson & Bear LLP
인용정보 피인용 횟수 : 120  인용 특허 : 23

초록

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then t

대표청구항

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then t

이 특허에 인용된 특허 (23)

  1. Conger Darrell R. (Portland OR) Posa John G. (Lake Oswego OR) Wickenden Dennis K. (Lake Oswego OR), Apparatus for depositing material on a substrate.
  2. Sang-Gi Ko KR, Capacitor and method of fabricating the same.
  3. Takasu Katsuji,JPX ; Tsuda Hisanori,JPX ; Sano Masafumi,JPX ; Hirai Yutaka,JPX, Device for forming deposited film.
  4. Roger Leung ; Denis Endisch ; Songyuan Xie ; Nigel Hacker ; Yanpei Deng, Dielectric films for narrow gap-fill applications.
  5. Stumborg Michael F. ; Santiago Francisco ; Chu Tak Kin ; Boulais Kevin A., Electronic devices with composite atomic barrier film and process for making same.
  6. Stumborg Michael F. ; Santiago Francisco ; Chu Tak Kin ; Boulais Kevin A., Electronic devices with strontium barrier film and process for making same.
  7. Changming Jin ; Kelly J. Taylor ; Wei William Lee, Integrated circuit dielectric and method.
  8. Naoki Komai JP; Shingo Kadomura JP; Mitsuru Taguchi JP; Akira Yoshio JP; Takaaki Miyamoto JP, Interconnection structure and fabrication process therefor.
  9. Nguyen Tue ; Hsu Sheng Teng, Low resistance contact between integrated circuit metal levels and method for same.
  10. Posa John G. (Lake Oswego OR), Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition.
  11. Suntola Tuomo,FIX ; Lindfors Sven,FIX ; Soininen Pekka,FIX, Method and equipment for growing thin films.
  12. Alessandra Satta BE; Karen Maex BE; Kai-Erik Elers FI; Ville Antero Saanila FI; Pekka Juha Soininen FI; Suvi P. Haukka FI, Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
  13. Kelly Michael A. (121 Erica Way Portola Valley CA 94028), Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its.
  14. Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Park Chang-soo,KRX ; Kim Young-sun,KRX, Method for forming dielectric film of capacitor having different thicknesses partly.
  15. Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Park Chang-soo,KRX ; Lee Sang-min,KRX, Method for manufacturing thin film using atomic layer deposition.
  16. Suntola Tuomo S. (Espoo FIX) Pakkala Arto J. (Espoo FIX) Lindfors Sven G. (Espoo FIX), Method for performing growth of compound thin films.
  17. Suntola Tuomo (Riihikallio 02610 Espoo 61 SF) Antson Jorma (Urheilutie 22 ; 01350 Vantaa 35 SF), Method for producing compound thin films.
  18. Stumborg Michael F. ; Santiago Francisco ; Chu Tak Kin ; Boulais Kevin A., Process for making a semiconductor device with barrier film formation using a metal halide and products thereof.
  19. Miyamoto Takaaki,JPX, Semiconductor device contains refractory metal or metal silicide with less than 1% weight of halogen atom.
  20. Mee-Young Yoon KR; Sang-In Lee KR; Hyun-Seok Lim KR, Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer.
  21. Sherman Arthur, Sequential chemical vapor deposition.
  22. Gadgil Prasad N. ; Seidel Thomas E., Vertically-stacked process reactor and cluster tool system for atomic layer deposition.
  23. Izumi Hirohiko (Sagamihara JPX), .

이 특허를 인용한 특허 (120)

  1. Wang, Chang-Gong; Shero, Eric; Wilk, Glen, ALD of metal silicate films.
  2. Wang, Chang-Gong; Shero, Eric; Wilk, Glen, ALD of metal silicate films.
  3. Fu, Xinyu; Forster, John; Wang, Wei W., Apparatus and a method for cleaning a dielectric film.
  4. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  5. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  6. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  7. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.
  8. Myo, Nyi Oo; Choi, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Apparatuses for atomic layer deposition.
  9. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.
  10. Chung,Hua; Wang,Rongjun; Maity,Nirmalya, Atomic layer deposition of tantalum based barrier materials.
  11. Chen, Ling; Marcadal, Christophe; Yoon, Hyungsuk Alexander, CVD TiSiN barrier for copper integration.
  12. Kato,Hitoshi; Fukushima,Kohei; Yonezawa,Masato; Hiraka,Junya, CVD method for forming silicon nitride film.
  13. Lu, Jiang; Ha, Hyoung-Chan; Ma, Paul F.; Ganguli, Seshadri; Aubuchon, Joseph F.; Yu, Sang-ho; Narasimhan, Murali K., Cobalt deposition on barrier surfaces.
  14. Lu, Jiang; Ha, Hyoung-Chan; Ma, Paul; Ganguli, Seshadri; Aubuchon, Joseph F.; Yu, Sang Ho; Narasimhan, Murali K., Cobalt deposition on barrier surfaces.
  15. Raaijmakers, Ivo; Haukka, Suvi P.; Saanila, Ville A.; Soininen, Pekka J.; Elers, Kai-Erik; Granneman, Ernst H.A., Conformal lining layers for damascene metallization.
  16. Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
  17. Chung, Hua; Chen, Ling; Chin, Barry L., Cyclical deposition of refractory metal silicon nitride.
  18. Chung,Hua; Chen,Ling; Chin,Barry L., Cyclical deposition of refractory metal silicon nitride.
  19. Wang,Shulin; Kroemer,Ulrich; Luo,Lee; Chen,Aihua; Li,Ming, Cyclical deposition of tungsten nitride for metal oxide gate electrode.
  20. Khandelwal, Amit; Gelatos, Avgerinos V.; Marcadal, Christophe; Chang, Mei, Deposition and densification process for titanium nitride barrier layers.
  21. Khandelwal, Amit; Gelatos, Avgerinos V.; Marcadal, Christophe; Chang, Mei, Deposition and densification process for titanium nitride barrier layers.
  22. Yoon, Ki Hwan; Cha, Yonghwa Chris; Yu, Sang Ho; Ahmad, Hafiz Farooq; Wee, Ho Sun, Deposition methods for barrier and tungsten materials.
  23. Yoon,Ki Hwan; Cha,Yonghwa Chris; Yu,Sang Ho; Ahmad,Hafiz Farooq; Wee,Ho Sun, Deposition methods for barrier and tungsten materials.
  24. Wang, Chang-Gong; Shero, Eric, Doping with ALD technology.
  25. McLaughlin,Paul S.; Sankaran,Sujatha; Standaert,Theodorus E., Embedded barrier for dielectric encapsulation.
  26. Chen, Ling; Chung, Hua; Chin, Barry L.; Zhang, Hong, Enhanced copper growth with ultrathin barrier layer for high performance interconnects.
  27. Chen, Ling; Chung, Hua; Chin, Barry L.; Zhang, Hong, Enhanced copper growth with ultrathin barrier layer for high performance interconnects.
  28. Chen,Ling; Chang,Mei, Enhancement of copper line reliability using thin ALD tan film to cap the copper line.
  29. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  30. Byun, Jeong Soo; Mak, Alfred, Formation of boride barrier layers using chemisorption techniques.
  31. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  32. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  33. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  34. Lai, Ken K.; Byun, Jeong Soo; Wu, Frederick C.; Srinivas, Ramanujapuran A.; Gelatos, Avgerinos; Chang, Mei; Kori, Moris; Sinha, Ashok K.; Chung, Hua; Fang, Hongbin; Mak, Alfred W.; Yang, Michael X.; Xi, Ming, Formation of composite tungsten films.
  35. Lai,Ken K.; Byun,Jeong Soo; Wu,Frederick C.; Srinivas,Ramanujapuran A.; Gelatos,Avgerinos; Chang,Mei; Kori,Moris; Sinha,Ashok K.; Chung,Hua; Fang,Hongbin; Mak,Alfred W.; Yang,Michael X.; Xi,Ming, Formation of composite tungsten films.
  36. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
  37. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
  38. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus for atomic layer deposition.
  39. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman; Chang, Mei, Gas delivery apparatus for atomic layer deposition.
  40. Huang,Judy H., In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application.
  41. Huang, Judy H., In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application.
  42. Ma, Paul F.; Aubuchon, Joseph F.; Chang, Mei; Kim, Steven H.; Wu, Dien-Yeh; Nakashima, Norman M.; Johnson, Mark; Palakodeti, Roja, In-situ chamber treatment and deposition process.
  43. Chung,Hua; Maity,Nirmalya; Yu,Jick; Mosely,Roderick Craig; Chang,Mei, Integration of ALD tantalum nitride for copper metallization.
  44. Chung,Hua; Bekiaris,Nikolaos; Marcadal,Christophe; Chen,Ling, Integration of ALD/CVD barriers with porous low k materials.
  45. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Integration of barrier layer and seed layer.
  46. Ko, Chung-Chi; Shen, Ting-Yu; Lin, Keng-Chu; Chou, Chia-Cheng; Bao, Tien-I; Jeng, Shwang-Ming; Yu, Chen-Hua, Low-k interconnect structures with reduced RC delay.
  47. Byun, Jeong Soo, Method and apparatus for depositing tungsten after surface treatment to improve film characteristics.
  48. Byun,Jeong Soo, Method and apparatus for depositing tungsten after surface treatment to improve film characteristics.
  49. Sinha,Ashok; Xi,Ming; Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
  50. Hendriks, Menso; Knapp, Martin; Haukka, Suvi, Method for depositing thin films by mixed pulsed CVD and ALD.
  51. Xi, Ming; Sinha, Ashok; Kori, Moris; Mak, Alfred W.; Lu, Xinliang; Lai, Ken Kaung; Littau, Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
  52. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
  53. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
  54. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method for forming tungsten materials during vapor deposition processes.
  55. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Method for forming tungsten materials during vapor deposition processes.
  56. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
  57. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
  58. Hudson,Eric A.; Cirigliano,Peter, Method for stripping photoresist from etched wafer.
  59. Ma, Paul; Aubuchon, Joseph F.; Lu, Jiang; Chang, Mei, Method for tuning a deposition rate during an atomic layer deposition process.
  60. LaBrake,Dwayne L., Method of controlling the critical dimension of structures formed on a substrate.
  61. Zope, Bhushan N.; Gelatos, Avgerinos V.; Zheng, Bo; Lei, Yu; Fu, Xinyu; Gandikota, Srinivas; Yu, Sang Ho; Abraham, Mathew, Method of enabling seamless cobalt gap-fill.
  62. Zope, Bhushan N.; Gelatos, Avgerinos V.; Zheng, Bo; Lei, Yu; Fu, Xinyu; Gandikota, Srinivas; Yu, Sang-Ho; Abraham, Mathew, Method of enabling seamless cobalt gap-fill.
  63. Zope, Bhushan N.; Gelatos, Avgerinos V.; Zheng, Bo; Lei, Yu; Fu, Xinyu; Gandikota, Srinivas; Yu, Sang-ho; Abraham, Mathew, Method of enabling seamless cobalt gap-fill.
  64. Chung, Hua; Chen, Ling; Ku, Vincent W., Method of film deposition using activated precursor gases.
  65. Sreenivasan,Sidlgata V., Method of forming a recessed structure employing a reverse tone process.
  66. McLaughlin, Paul S.; Sankaran, Sujatha; Standaert, Theodorus E., Method of forming an embedded barrier layer for protection from chemical mechanical polishing process.
  67. Kuo, Kai-Shiang; Chang, Ken-Yu; Lee, Ya-Lien; Su, Hung-Wen, Method of forming hybrid diffusion barrier layer and semiconductor device thereof.
  68. Kuo, Kai-Shiang; Chang, Ken-Yu; Lee, Ya-Lien; Su, Hung-Wen, Method of forming hybrid diffusion barrier layer and semiconductor device thereof.
  69. Van Nooten, Sebastian E.; Maes, Jan Willem; Marcus, Steven; Wilk, Glen; Räisänen, Petri; Elers, Kai-Erik, Method of forming non-conformal layers.
  70. Sreenivasan,Sidlgata V., Method of forming stepped structures employing imprint lithography.
  71. Xie, Qi; Machkaoutsan, Vladimir; Maes, Jan Willem, Method of making a wire-based semiconductor device.
  72. Xie, Qi; Machkaoutsan, Vladimir; Maes, Jan Willem, Method of making a wire-based semiconductor device.
  73. Annapragada,Rao; Takeshita,Kenji, Method of preventing damage to porous low-k materials during resist stripping.
  74. Haukka, Suvi; Huotari, Hannu, Method of producing thin films.
  75. Yi,Ge, Method to make nano structure below 25 nanometer with high uniformity on large scale.
  76. Fu, Xinyu; Tang, Wei; Shah, Kavita; Gandikota, Srinivas; Yu, San H.; Gelatos, Avgerinos, Methods for annealing a contact metal layer to form a metal silicidation layer.
  77. Myo, Nyi Oo; Cho, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Methods for atomic layer deposition of hafnium-containing high-K dielectric materials.
  78. Chang, Mei; Thanh, Linh; Zheng, Bo; Sundarrajan, Arvind; Forster, John C.; Kellkar, Umesh M.; Narasimhan, Murali K., Methods for contact clean.
  79. Byun, Jeong Soo, Methods for depositing tungsten after surface treatment.
  80. Lai, Ken Kaung; Rajagopalan, Ravi; Khandelwal, Amit; Moorthy, Madhu; Gandikota, Srinivas; Castro, Joseph; Gelatos, Avgerinos V.; Knepfler, Cheryl; Jian, Ping; Fang, Hongbin; Huang, Chao-Ming; Xi, Ming; Yang, Michael X.; Chung, Hua; Byun, Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
  81. Lai,Ken Kaung; Rajagopalan,Ravi; Khandelwal,Amit; Moorthy,Madhu; Gandikota,Srinivas; Castro,Joseph; Gelatos,Averginos V.; Knepfler,Cheryl; Jian,Ping; Fang,Hongbin; Huang,Chao Ming; Xi,Ming; Yang,Michael X.; Chung,Hua; Byun,Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
  82. Fu, Xinyu; Gandikota, Srinivas; Yu, Sang Ho; Shah, Kavita; Lei, Yu, Methods for forming a contact metal layer in semiconductor devices.
  83. Ling, Mang-Mang; Ko, Jungmin; Kang, Sean S.; Pender, Jeremiah T.; Nemani, Srinivas D.; Howard, Bradley, Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process.
  84. Naik, Mehul B.; Nemani, Srinivas D.; Koshizawa, Takehito; Ren, He, Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications.
  85. Zheng, Bo; Sundarrajan, Arvind; Hamkar, Manish, Methods for precleaning a substrate prior to metal silicide fabrication process.
  86. Jiang, Chong; Chan, Anthony Chih-Tung, Methods of forming a barrier layer in an interconnect structure.
  87. Fu, Xinyu; Kashefizadeh, Keyvan; Bodke, Ashish Subhash; Lam, Winsor; Tanaka, Yiochiro; Kim, Wonwoo, Methods of forming a layer for barrier applications in an interconnect structure.
  88. Fu, Xinyu; Kashefizadeh, Keyvan; Bodke, Ashish Subhash; Lam, Winsor; Tanaka, Yiochiro; Kim, Wonwoo, Methods of forming a layer for barrier applications in an interconnect structure.
  89. Ge, Zhenbin; Ritchie, Alan; Allen, Adolph Miller, Methods of forming a metal containing layer on a substrate with high uniformity and good profile control.
  90. Elers,Kai Erik, Multilayer metallization.
  91. Sreenivasan, Sidlgata V., Pattern reversal employing thick residual layers.
  92. Stacey,Nicholas A.; Sreenivasan,Sidlgata V.; Miller,Michael N., Patterning substrates employing multi-film layers defining etch-differential interfaces.
  93. Kumar,Devendra; Goundar,Kamal Kishore; Kemeling,Nathanael R. C.; Fukuda,Hideaki; Sprey,Hessel; Stokhof,Maarten, Plasma pre-treating surfaces for atomic layer deposition.
  94. Nam, Sang Ki; Cho, Tae Seung; Godet, Ludovic; Nemani, Srinivas D., Plasma uniformity control by arrays of unit cell plasmas.
  95. Mahajani, Maitreyee; Yudovsky, Joseph; McDougall, Brendan, Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool.
  96. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
  97. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
  98. Marsh, Eugene P., Porous organosilicate layers, and vapor deposition systems and methods for preparing same.
  99. Marsh, Eugene P., Porous organosilicate layers, and vapor deposition systems and methods for preparing same.
  100. Marsh,Eugene P., Porous organosilicate layers, and vapor deposition systems and methods for preparing same.
  101. Sreenivasan,Sidlgata V., Positive tone bi-layer imprint lithography method.
  102. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
  103. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
  104. Ganguli, Seshadri; Chu, Schubert S.; Chang, Mei; Yu, Sang-Ho; Moraes, Kevin; Phan, See-Eng, Process for forming cobalt-containing materials.
  105. Lu, Xinliang; Jian, Ping; Yoo, Jong Hyun; Lai, Ken Kaung; Mak, Alfred W.; Jackson, Robert L.; Xi, Ming, Pulsed deposition process for tungsten nucleation.
  106. Gandikota,Srinivas; Moorthy,Madhu; Khandelwal,Amit; Gelatos,Avgerinos V.; Chang,Mei; Shah,Kavita; Ganguli,Seshadri, Ruthenium as an underlayer for tungsten film deposition.
  107. Kim,Si Bum, Semiconductor device and method for fabricating the same.
  108. Bae, Se Yeul, Semiconductor device with a metal line and method of forming the same.
  109. Cao, Wei; Chung, Hua; Ku, Vincent W.; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  110. Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  111. Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  112. Olsen, Christopher; Narwankar, Pravin K.; Kher, Shreyas S.; Thakur, Randhir; Muthukrishnan, Shankar; Kraus, Philip A., Stabilization of high-k dielectric materials.
  113. Wilk, Glen, Surface preparation prior to deposition on germanium.
  114. Xi, Ming; Yang, Michael; Zhang, Hui, System and method for forming an integrated barrier layer.
  115. Mak, Alfred W.; Chang, Mei; Byun, Jeong Soo; Chung, Hua; Sinha, Ashok; Kori, Moris, System and method to form a composite film stack utilizing sequential deposition techniques.
  116. Haukka, Suvi P.; Raaijmakers, Ivo; Li, Wei Min; Kostamo, Juhana; Sprey, Hessel; Werkhoven, Christiaan J., Thin films.
  117. Haukka,Suvi P.; Raaijmakers,Ivo; Li,Wei Min; Kostamo,Juhana; Sprey,Hessel, Thin films.
  118. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Tungsten nitride atomic layer deposition processes.
  119. Wang,Shulin; Kroemer,Ulrich; Luo,Lee; Chen,Aihua; Li,Ming, Tungsten nitride atomic layer deposition processes.
  120. Lee, Sang-Hyeob; Gelatos, Avgerinos V.; Wu, Kai; Khandelwal, Amit; Marshall, Ross; Renuart, Emily; Lai, Wing-Cheong Gilbert; Lin, Jing, Vapor deposition of tungsten materials.
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