[특허]Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode

[미국특허] Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01S-003/10
출원번호	US-0096957 (2002-03-14)
우선권정보	JP-0088822 (2001-03-26)
발명자 / 주소	Kitamura, Shojiro Ide, Tsugio Harada, Atsushi Kaneko, Takeo
출원인 / 주소	Seiko Epson Corporation
대리인 / 주소	Oliff & Berridge, PLC
인용정보	피인용 횟수 : 20 인용 특허 : 5

초록 ▼

The present invention provides a surface emitting laser and a photodiode which permit secure mounting even in mounting by flip chip bonding, and high-speed modulation. The present invention also provides a manufacturing method therefor and an optoelectric integrated circuit using the surface emitting laser and the photodiode. Semiconductor stacked layers stacked on a semiconductor substrate have a light emitting portion and a reinforcing portion formed with a recessed portion provided therebetween, and a p-type ohmic electrode and an n-type ohmic electrode are formed on the top of the reinforcing portion. The p-type ohmic electrode is electrically connected to a p-type contact layer through a contact hole vertically formed in polyimide buried in the recessed portion to permit supply of a current to the light emitting portion in the thickness direction. The recessed portion has a groove formed to reach the semiconductor substrate, thereby suppressing the parasitic capacity between the p-type ohmic electrode and the n-type ohmic electrode.

대표청구항 ▼

1. A surface emitting laser, comprising: a semiconductor substrate; semiconductor stacked layers stacked on the substrate and divided into a light emitting portion and a reinforcing portion by a recessed portion, the reinforcing portion having an upper surface; an insulating material buried in the recessed portion; and a pair of electrodes that apply a voltage to pass a current in a thickness direction of the light emitting portion, the pair of electrodes having an external connecting portion formed on the upper surface of the reinforcing portion. 2. The surface emitting laser according to claim 1, one of the pair of electrodes being electrically connected to a lower end of the light emitting portion through a contact hole vertically extending in the insulating material. 3. The surface emitting laser according to claim 1, a bottom of the recessed portion reaching a surface of the semiconductor substrate over an entire length of the bottom in order to attain non-conduction between a lower end of the light emitting portion and a lower end of the reinforcing portion. 4. A optoelectric integrated circuit, comprising: an optical waveguide; a first mirror for incidence into the optical waveguide; a second mirror for emission from the optical waveguide; electric wiring; a surface emitting laser including: a semiconductor substrate; semiconductor stacked layers stacked on the substrate and divided into a light emitting portion and a reinforcing portion by a recessed portion, the reinforcing portion having an upper surface; a first insulating material buried in the recessed portion; and a pair of electrodes that apply a voltage to pass a current in a thickness direction of the light emitting portion, the pair of electrodes having an external connecting portion formed on the upper surface of the reinforcing portion; a laser driving circuit that drives the surface emitting laser; a photodiode including: a semiconductor substrate; semiconductor stacked layers divided into a light receiving portion and a reinforcing portion by a recessed portion, the reinforcing portion having an upper surface; a second insulating material buried in the recessed portion; and a pair of electrodes that detect a current flowing in a thickness direction of the light receiving portion due to incidence of light, the pair of electrodes having an external connecting portion formed on the upper surface of the reinforcing portion; and an amplifier circuit that detects signals from the photodiode, the surface emitting laser, the laser driving circuit, the photodiode, and the amplifier circuit being mounted on the electric wiring by flip chip bonding.

이 특허에 인용된 특허 (5) 인용/피인용 타임라인 분석

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Ishikawa Masayuki,JPX ; Nitta Koichi,JPX, Semiconductor light emitting diode having a capacitor.
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Ogura Ichiro (Tokyo JPX), Surface emission laser and method of manufacturing the same.
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[미국특허] Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode 원문보기

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[미국특허] Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode 원문보기

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