초록 ▼

The present invention discloses devices and a method of fabrication of devices using a shape memory effect, thin film with a compositional gradient through the thickness of the film. Specifically, a NiTi SME thin film is disclosed that can be used in actuators, MEMS devices and flow control. The pro

The present invention discloses devices and a method of fabrication of devices using a shape memory effect, thin film with a compositional gradient through the thickness of the film. Specifically, a NiTi SME thin film is disclosed that can be used in actuators, MEMS devices and flow control. The process of fabrication includes a gradual heating of the target over time during the sputter deposition of a thin film on a substrate under high vacuum, without compositional modification. The resulting thin film exhibits two-way shape memory effect that can be cyclically applied without an external bias force.

대표청구항 ▼

The present invention discloses devices and a method of fabrication of devices using a shape memory effect, thin film with a compositional gradient through the thickness of the film. Specifically, a NiTi SME thin film is disclosed that can be used in actuators, MEMS devices and flow control. The pro

The present invention discloses devices and a method of fabrication of devices using a shape memory effect, thin film with a compositional gradient through the thickness of the film. Specifically, a NiTi SME thin film is disclosed that can be used in actuators, MEMS devices and flow control. The process of fabrication includes a gradual heating of the target over time during the sputter deposition of a thin film on a substrate under high vacuum, without compositional modification. The resulting thin film exhibits two-way shape memory effect that can be cyclically applied without an external bias force. m having a thickness of about 2 nanometers to about 1 micrometer. 6. An Fe particle having a size of about 5 nm to about 50 nm, the Fe particle having a silane coupling film thereon, the silane coupling film having the formula R-silane, where R is an aryl having an ammonium group selected from the group consisting of phenylammonium, benzylammonium, xylylammonium, biphenylammonium, and naphthylammonium, the coupling film having a thickness of about 2 nanometers to about 1 micrometer. 7. An Fe particle having a size of about 5 nm to about 50 nm, the Fe particle having a silane coupling film thereon, the silane coupling film having the formula R-silane, where R is an aryl having a charged ammonium group selected from the group consisting of phenyltrimethylammonium, benzyltrimethylammonium, xylyltrimethylammonium, biphenyltrimethylammonium, and naphthyltrimethylammonium, the coupling film having a thickness of about 2 nanometers to about 1 micrometer. 8. An Fe particle having a size of about 5 nm to about 50 nm, the Fe particle having a silane coupling film thereon, the silane coupling film having the formula R-silane, where R is selected from the group consisting of decyl, dodecyl, octadecyl, dodecylsulfonate, octadecylsulfonate, phenylsulfonate, ethylammonium, hexylammonium, butyltrimethylammonium, and hexyltrimethylammonium, the coupling film having a thickness of about 2 nanometers to about 1 micrometer.