초록

The present invention relates to the design of and includes monolithically integrated diodes for use in planar, thin-film, photovoltaic devices, such as solar cells.

대표청구항 ▼

1. An apparatus for use as a diode comprising a substrate layer, a conductive layer deposited on said substrate layer, an p-type absorber layer deposited on said conductive layer, a n-type window layer deposited on said p-type absorber layer, a first trench area on said substrate layer, and f

1. An apparatus for use as a diode comprising a substrate layer, a conductive layer deposited on said substrate layer, an p-type absorber layer deposited on said conductive layer, a n-type window layer deposited on said p-type absorber layer, a first trench area on said substrate layer, and formed into said conductive layer, said p-type absorber layer, and said n-type window layer; an electrical insulator layer deposited on said first trench area; a second trench area parallel to said first trench area, on said conductive layer and formed into said p-type absorber layer and said n-type window layer; a translucent conductive layer deposited on said n-type window layer, said electrical insulator, and said second trench area; a third trench area near said second trench area, on said conductive, layer and formed into said p-type absorber layer, said n-type window layer, and said translucent conductive layer; and an opaque layer deposited on a portion of said translucent conductive layer. 2. The apparatus of claim 1, wherein said substrate layer comprises a material selected from a group consisting of an electrically insulating polyimide, Upilex.RTM., polyphenylene benzobis oxazole (PBO), polyamide, polyether ether ketone, and metallic foils coated with electrically insulating polyimide, Upilex.RTM., PBO, polyamide, and polyether ether ketone. 3. The apparatus of claim 1, wherein said conductive layer comprises a material selected from a group consisting of molybdenum, a transparent conductive oxide, brass, titanium, nickel, and nickel-vanadium. 4. The apparatus of claim 1, wherein said p-type absorber layer comprises a first material selected from a group consisting of copper, copper-silver, and silver; a second material selected from a group consisting of indium, indium-gallium, indium-aluminum, and aluminum; and a third material selected from a group consisting of selenide, selenide-sulfer, and sulfer. 5. The apparatus of claim 1, wherein said n-type window layer comprises a material selected from a group consisting of cadmium sulfide, cadmium zinc sulfide, zinc sulfide, zinc selenide, cadmium selenide, zinc-indium selenide, and indium selenide. 6. The apparatus of claim 1, wherein said electrical insulator layer comprises a material selected from a group consisting of a resistive ink, a dielectric, a pottant, and an encapsulant. 7. The apparatus of claim 1, wherein said translucent conductor layer comprises a material that is transparent. 8. The apparatus of claim 1, wherein said translucent conductor layer comprises a metallic grid. 9. The apparatus of claim 1, wherein said translucent conductor layer comprises a translucent conductive oxide. 10. The apparatus of claim 1, wherein said translucent conductor layer comprises indium tin oxide. 11. The apparatus of claim 1, wherein said opaque layer comprises an opaque material. 12. The apparatus of claim 1, wherein said opaque layer comprises a metal. 13. The apparatus of claim 1, wherein said opaque layer comprises a material selected from a group consisting of aluminum, molybdenum, silver, and titanium. 14. The apparatus of claim 1, wherein said opaque layer comprises a material having a plurality of phases, at least one of which is opaque. 15. The apparatus of claim 14, wherein said material having a plurality of phases has at least one phase that is translucent. 16. An apparatus for use as a module of photovoltaic cells with integrated diodes comprising the apparatus of claim 1, wherein said third trench area defines a plurality of photovoltaic devices. 17. The apparatus of claim 16, wherein said photovoltaic devices are selected from a group consisting of photovoltaic cells, diodes, capacitors, and resistors.