초록 ▼

A thermally insulating panel (e.g., vacuum IG window unit) includes first and second opposing substrates spaced apart from one another by a plurality of spacers. A low pressure space is defined between the substrates, and is hermetically sealed off by at least one edge seal. During evacuation of the

A thermally insulating panel (e.g., vacuum IG window unit) includes first and second opposing substrates spaced apart from one another by a plurality of spacers. A low pressure space is defined between the substrates, and is hermetically sealed off by at least one edge seal. During evacuation of the space, a plasma is ignited within the space in order to reduce the time needed to evacuate the space down to the desired low pressure.

대표청구항 ▼

A thermally insulating panel (e.g., vacuum IG window unit) includes first and second opposing substrates spaced apart from one another by a plurality of spacers. A low pressure space is defined between the substrates, and is hermetically sealed off by at least one edge seal. During evacuation of the

A thermally insulating panel (e.g., vacuum IG window unit) includes first and second opposing substrates spaced apart from one another by a plurality of spacers. A low pressure space is defined between the substrates, and is hermetically sealed off by at least one edge seal. During evacuation of the space, a plasma is ignited within the space in order to reduce the time needed to evacuate the space down to the desired low pressure. nealing fluid. 2. A method according to claim 1, wherein the step of heating the workpiece and the applied cleaning and annealing fluid comprises the step of energizing a heating source. 3. A method according to claim 2, wherein the heating source comprises reflectors that are adapted to reflect heat to the workpiece. 4. A method according to claim 1, wherein the step of heating the workpiece and the applied cleaning and annealing fluid comprises the step of generating microwave radiation. 5. A method according to claim 1, wherein the cleaning and annealing fluid comprises deoxygenated de-ionized water. 6. A method according to claim 5 further comprising the step of deoxygenating the de-ionized water by adding bubbled nitrogen to the de-ionized water. 7. A method according to claim 5 further comprising the step of deoxygenating the de-ionized water by adding bubbled argon to the de-ionized water. 8. A method according to claim 5 further comprising the step of deoxygenating the de-ionized water by adding bubbled inert gas to the de-ionized water. 9. A method according to claim 5 further comprising the step of deoxygenating the de-ionized water by adding a reducing gas. 10. A method according to claim 5 further comprising the step of deoxygenating the de-ionized water by adding pentose sugar to the de-ionized water. 11. A method according to claim 5, wherein the deoxygenated de-ionized water is heated to a temperature between 60-99° C. 12. A method according to claim 1 further comprising the step of rotating the workpiece about a first axis while applying the cleaning and annealing fluid. 13. A method according to claim 12, wherein the step of rotating the workpiece comprises the step of rotating the workpiece between 2-20 revolutions per minute. 14. A method according to claim 1, wherein the workpiece comprises one of a semiconductor wafer, flat panel, magnetic film head, and a packaging substrate. 15. A method according to claim 1, wherein the workpiece is heated to a temperature between 60 to 450° C. 16. A method according to claim 15, wherein the workpiece is heated for 5 seconds to 20 minutes. 17. A method according to claim 1, wherein the cleaning and annealing fluid comprises propylene glycol. 18. A method according to claim 17, wherein the propylene glycol is heated to a temperature between 60-200° C. 19. A method according to claim 1, wherein the step of heating the workpiece and the applied cleaning and annealing fluid heat the applied cleaning and annealing fluid to a temperature above the temperature at which the cleaning and annealing fluid was originally applied. 20. A method according to claim 1, wherein the cleaning and annealing fluid is heated to a temperature between 60-200° C. prior to applying the cleaning and annealing fluid to the workpiece. 21. A method according to claim 1 wherein the applied cleaning and annealing fluid changes during the time that the step of applying the cleaning and annealing fluid to the metallic layer while heating the workpiece and the applied cleaning and annealing fluid takes place. 22. A method according to claim 21 where initially the cleaning and annealing fluid is de-ionized water, and thereafter the cleaning and annealing fluid is de-ionized deoxygenated water. 23. A method according to claim 22 wherein another cleaning and annealing fluid is used between usage of the de-ionized water and the de-ionized deoxygenated water. 24. A method according to claim 23 wherein the another cleaning and annealing fluid is an acid solution. 25. A method according to claim 23 wherein the another cleaning and annealing fluid is a dilute mineral acid solution. 26. A method according to claim 21 where a final cleaning and annealing fluid does not oxidize the metallic layer. 27. A method according to claim 26 wherein another cleaning and annealing fluid used prior to the final cleaning and annealing fluid includes an acid therein. 28. A method for cleaning and annealing a plated workpiece,