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An apparatus on a wafer, including; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall including; one or more base frames, a fourth metal layer of the wall including; one or more vertical frame pairs each on top of the one or more base frames and having

An apparatus on a wafer, including; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall including; one or more base frames, a fourth metal layer of the wall including; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall including; one or more top frames each over the pass-thru; and a metal lid.

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An apparatus on a wafer, including; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall including; one or more base frames, a fourth metal layer of the wall including; one or more vertical frame pairs each on top of the one or more base frames and having

An apparatus on a wafer, including; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall including; one or more base frames, a fourth metal layer of the wall including; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall including; one or more top frames each over the pass-thru; and a metal lid. ium tetrachloride, ammonia and diborane. 8. The method of claim 7, wherein the step of depositing the titanium boronitride layer is performed by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the substrate. 9. The method of claim 7, wherein the gaseous mixture comprises the diborane in an amount effective to provide the conductive contact with a level of boron such that the contact adheres to the sidewalls of the opening, with no substantial cracks being formed in the insulative layer. 10. The method of claim 7, wherein the amount of diborane is effective to provide the conductive contact with a level of thermal stress to substantially eliminate cracking of the insulative layer. 11. The method of claim 7, wherein the gaseous mixture comprises the ammonia in an amount effective to provide the conductive contact with an effective amount of conductivity to an active area within the substrate. 12. The method of claim 11, wherein the active area comprises a source or drain region. 13. The method of claim 1, wherein the step of depositing the titanium boronitride layer comprises: depositing a layer of titanium nitride over the titanium silicide layer; depositing a layer of titanium boronitride over the titanium nitride layer; and depositing a layer of titanium nitride over the titanium boronitride layer to fill the opening; and repeating the foregoing steps to form a multi-layered film. 14. The method of claim 1, wherein the step of depositing the titanium boronitride layer comprises depositing a layer of titanium nitride over the titanium silicide layer, and sequentially depositing overlying layers of titanium boronitride and titanium nitride to form a multi-layered film, the film comprising a titanium boronitride layer interposed between two titanium nitride layers. 15. The method of claim 14, wherein the titanium boronitride layer is deposited by thermal chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the substrate. 16. The method of claim 14, wherein the titanium nitride layer is deposited by thermal chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride and about 100 to about 1000 sccm ammonia. 17. The method of claim 14, wherein each of the layers of the multi-layered film are about 100 to about 500 angstroms thick. 18. The method of claim 1, wherein the insulative layer comprises an oxide selected from the group consisting of silicon dioxide, phosphosilicate glass, borosilicate glass, and borophosphosilicate glass. 19. The method of claim 1, wherein the insulative layer comprises borophosphosilicate glass. 20. The method of claim 1, wherein the step of depositing the titanium silicide layer is by plasma enhanced chemical vapor deposition using a gas comprising titanium tetrachloride. 21. The method of claim 1, wherein the step of depositing the titanium silicide layer comprises the steps of sputtering titanium onto the substrate, and annealing the titanium. 22. The method of claim 1, wherein the step of depositing the titanium silicide layer is by a chemical vapor deposition using titanium tetrachloride and a silicon source gas. 23. The method of claim 22, wherein the silicon source gas is selected from the group consisting of silane, dichlorosilane, and mixtures thereof. 24. The method of claim 1, wherein the titanium silicide layer is formed to a thickness of about 250 to about 300 angstroms. 25. The method of claim 1, further comprising, after the step of forming the titanium, boronitride layer, the step of removing an excess portion of the titanium nitride layer to form the conductive contact in the opening. 26. The method of claim 25, wherein the step of removing the titanium boronitride layer is performed by chemical-mechanical polishing. 27. A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate; forming a layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the titanium silicide layer to fill the opening. 28. The method of claim 27, wherein the titanium boronitride layer comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate. 29. The method of claim 27, wherein the step of forming the titanium boronitride layer comprises depositing a layer of titanium nitride over the titanium silicide layer, and sequentially depositing overlying layers of titanium boronitride and titanium nitride to form a multi-layered film wherein the titanium boronitride layer is disposed between titanium nitride layers. 30. A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and within the opening from a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane by thermal chemical vapor deposition. 31. The method of claim 30, wherein the titanium boronitride layer comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate. 32. A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening defined by sidewalls and a bottom portion; the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and into the opening to form the conductive contact; wherein the conductive contact comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate. 33. A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride; and depositing a titanium boronitride material over the titanium silicide layer and into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane. 34. The method of claim 33, wherein the titanium boronitride material is deposited by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the device. 35. The method of claim 33, wherein the flow of diborane and ammonia is effective to deposit an amount of boron and nitrogen such that the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantia