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A system having a plurality of platforms for positioning control devices near an occupant of a chair. The system includes a first and second support shaft affixed to each side of a chair. A first side platform is affixed to the first support shaft. A second side platform is affixed to the second sup

A system having a plurality of platforms for positioning control devices near an occupant of a chair. The system includes a first and second support shaft affixed to each side of a chair. A first side platform is affixed to the first support shaft. A second side platform is affixed to the second support shaft. A front platform is positioned in front of the chair. The front platform may be rotated away from the front of the chair by a pivot system which assists in moving the front platform. The system may also include two accessory platforms mounted adjacent each side platform. All the platforms may be adjustably positioned for the occupant of the chair. Computer and gaming control devices may be placed on top of the platforms.

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A system having a plurality of platforms for positioning control devices near an occupant of a chair. The system includes a first and second support shaft affixed to each side of a chair. A first side platform is affixed to the first support shaft. A second side platform is affixed to the second sup

A system having a plurality of platforms for positioning control devices near an occupant of a chair. The system includes a first and second support shaft affixed to each side of a chair. A first side platform is affixed to the first support shaft. A second side platform is affixed to the second support shaft. A front platform is positioned in front of the chair. The front platform may be rotated away from the front of the chair by a pivot system which assists in moving the front platform. The system may also include two accessory platforms mounted adjacent each side platform. All the platforms may be adjustably positioned for the occupant of the chair. Computer and gaming control devices may be placed on top of the platforms. asing slope in the force-time relationship to a relatively flat slope. 5. The method of claim 1 wherein: the substrate assembly includes a substrate, an endpoint layer over the substrate and a cover layer over the endpoint layer; and estimating the status of a parameter of the planarizing process comprises assessing exposure of the endpoint layer by monitoring a change from a decreasing slope of the force-time relationship to a relatively flat slope. 6. A method of mechanical or chemical-mechanical planarization of microelectronic substrate assemblies, comprising: moving at least one of a substrate assembly and a polishing pad relative to one another in a planarizing plane to generate lateral drag forces on the substrate assembly and on the pad; coupling the lateral drag forces to at least one of a force detection and a force measuring assembly configured to sense the lateral forces in a plane parallel to the planarizing plane; measuring lateral displacement or lateral forces between a first component coupled to one of the substrate assembly or the polishing pad and a second component in either a carrier assembly holding the substrate assembly or a table supporting the polishing pad, the lateral displacement or lateral forces between the first and second components being proportionate to lateral drag forces between the substrate assembly and the polishing pad; processing the measured lateral displacement or lateral forces between the first and second components to generate a force-time relationship between the lateral drag forces and time; and estimating the status of a parameter of the planarizing process by analyzing changes in the force-time relationship. 7. The method of claim 6 wherein: the substrate assembly comprises a shallow-trench-isolation structure including a substrate having trenches, an endpoint layer over the substrate, and a cover layer over the endpoint layer that fills the trenches; and estimating the status of a parameter of the planarizing process comprises assessing an endpoint at the endpoint layer by performing a first regression on a downward slope in the force-time relationship to determine a first line, performing a second regression on a relatively flat slope in the force-time relationship to determine a second line, assessing a reference time at an intersection of the first and second lines, and terminating removal of material from the substrate assembly at an endpoint time equal to the reference time plus a predetermined over-polish time. 8. The method of claim 6 wherein: the substrate assembly comprises a shallow-trench-isolation structure including a substrate having trenches, an silicon nitride endpoint layer over the substrate, and a silicon dioxide cover layer over the endpoint layer that fills the trenches; and estimating the status of a parameter of the planarizing process comprises assessing an endpoint at the endpoint layer by performing a first regression on a downward slope in the force-time relationship to determine a first line, performing a second regression on a relatively flat slope in the force-time relationship to determine a second line, assessing an exposure time at an intersection of the first and second lines, and terminating removal of material from the substrate assembly at an endpoint time equal to the exposure time plus a predetermined over-polish time. 9. The method of claim 6 wherein: the substrate assembly includes a substrate, an endpoint layer over the substrate and a cover layer over the endpoint layer; and estimating the status of a parameter of the planarizing process comprises assessing exposure of the endpoint layer by monitoring a change from a decreasing slope of the force-time relationship to a relatively flat slope. 10. A method of mechanical or chemical-mechanical planarization of microelectronic substrate assemblies, comprising: moving at least one of a substrate assembly and a polishing pad relative to one another in a