[특허]Electrical interconnect assemblies and methods

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01R-012/00
출원번호	US-0114586 (1998-07-13)
발명자 / 주소	Eldridge, Benjamin N.
출원인 / 주소	FormFactor, Inc.
대리인 / 주소	Burraston, N. KennethMerkadeau, Stuart L.
인용정보	피인용 횟수 : 42 인용 특허 : 26

초록 ▼

Interconnect assemblies and methods for forming and using them. In one example of the invention, an interconnect assembly comprises a substrate, a resilient contact element and a stop structure with an embedded circuit element. The resilient contact element is disposed on the substrate and has at le

Interconnect assemblies and methods for forming and using them. In one example of the invention, an interconnect assembly comprises a substrate, a resilient contact element and a stop structure with an embedded circuit element. The resilient contact element is disposed on the substrate and has at least a portion thereof which is capable of moving to a first position, which is defined by the stop structure, in which the resilient contact element is in mechanical and electrical contact with another contact element. In another example of the invention, a stop structure is disposed on a first substrate with a first contact element, and this stop structure defines a first position of a resilient contact element, disposed on a second substrate, in which the resilient contact element is in mechanical and electrical contact with the first contact element. Other aspects of the invention include methods of forming the stop structure and using the structure to perform testing of integrated circuits, including for example a semiconductor wafer of integrated circuits.

대표청구항 ▼

1. An interconnect assembly comprising: a first substrate having a first plurality of contact elements disposed on a surface thereof; a second substrate having a second plurality of contact elements disposed on a surface thereof; a plurality of elongate resilient contact structures electrically

1. An interconnect assembly comprising: a first substrate having a first plurality of contact elements disposed on a surface thereof; a second substrate having a second plurality of contact elements disposed on a surface thereof; a plurality of elongate resilient contact structures electrically interconnecting said first plurality of contact elements and said second plurality of contact elements; a stop structure disposed on said first substrate and extending away from said surface of said first substrate to define a minimum separation between said first substrate and said second substrate, wherein said stop structure does not enclose said elongate resilient contact structures; and a first circuit element embedded within said stop structure and electrically connected to a second circuit element associated with said first substrate. 2. An interconnect assembly as in claim 1 wherein said plurality of elongate resilient contact elements are attached to said first plurality of contact elements on said first substrate. 3. An interconnect assembly as in claim 1 wherein said resilient contact elements comprise spring structures. 4. An interconnect assembly as in claim 1 wherein said stop structure comprises an adhesive layer. 5. An interconnect assembly as in claim 4 wherein said adhesive layer bonds said stop structure to said first substrate. 6. An interconnect assembly as in claim 1 wherein said first substrate and said second substrate are formed toward each other by a vacuum generated between said first substrate and said second substrate. 7. An interconnect assembly as in claim 1 wherein said first substrate and said second substrate are formed toward each other by one of a pressurized bladder or a bellows and wherein a fluid in said bladder or said bellows is capable of controlling a temperature of at least one of said first substrate and said second substrate. 8. An interconnect assembly as in claim 1 wherein said first substrate is part of a probe card assembly, and said second substrate is a semiconductor wafer. 9. An interconnect assembly as in claim 1 wherein said first substrate is part of a wafer-level test assembly, and said second substrate is a semiconductor wafer. 10. An interconnect assembly as in claim 1 wherein said stop structure is formed lithographically. 11. An interconnect assembly as in claim 1 wherein said stop structure is formed from one of (a) a photoresist material; (b) an epoxy material; (c) a metal coated with an electrophoretic epoxy or (d) a polymeric material. 12. An interconnect assembly as in claim 1 wherein said plurality of elongate resilient contact structures are attached to said second contact elements on said second substrate. 13. An interconnect assembly as in claim 1 wherein said second substrate is part of a probe card assembly, and said first substrate is a semiconductor wafer. 14. An interconnect assembly as in claim 1 wherein said second substrate is part of a wafer-level test assembly, and said first substrate is a semiconductor wafer. 15. An interconnect assembly as in claim 1, wherein said first circuit element comprises a capacitor. 16. An interconnect assembly as in claim 15, wherein said capacitor comprises a plurality of layers of material including metal layers and at least one dielectric layer, said layers of material composing said stop structure. 17. An interconnect assembly as in claim 1 wherein said stop structure further comprises a shield plane. 18. An interconnect assembly as in claim 17, wherein said shield plane is grounded. 19. An interconnect assembly as in claim 1 further comprising a plurality of circuit elements embedded within said stop structure. 20. An interconnect assembly as in claim 1, wherein said first circuit element embedded within said stop structure is electrically connected to said second circuit element through traces embedded within said first substrate.

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