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An adaptive dynamic wavefront sensor and corresponding method comprising a spatial light modulator and a lenslet array. A subarray of pixels of the spatial light modulator controls illumination of a lenslet of the lenslet array. The sub-array can operate as a shutter for the corresponding lenslet or

An adaptive dynamic wavefront sensor and corresponding method comprising a spatial light modulator and a lenslet array. A subarray of pixels of the spatial light modulator controls illumination of a lenslet of the lenslet array. The sub-array can operate as a shutter for the corresponding lenslet or to control intensity of a focus of the lenslet.

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An adaptive dynamic wavefront sensor and corresponding method comprising a spatial light modulator and a lenslet array. A subarray of pixels of the spatial light modulator controls illumination of a lenslet of the lenslet array. The sub-array can operate as a shutter for the corresponding lenslet or

An adaptive dynamic wavefront sensor and corresponding method comprising a spatial light modulator and a lenslet array. A subarray of pixels of the spatial light modulator controls illumination of a lenslet of the lenslet array. The sub-array can operate as a shutter for the corresponding lenslet or to control intensity of a focus of the lenslet. ctric further comprises forming a moat contact hole by using the contact masking pattern as a mask and a moat as an etch stop. 17. The method of claim 16, wherein depositing a metal over the substrate further comprises filling the moat contact hole. 18. The method of claim 17, wherein planarizing the metal further comprises defining an electrical connection to the moat, and wherein the top plate of the capacitor and the electrical connection to the bottom plate of the capacitor and the electrical connection to the moat are laterally isolated by the first interlayer dielectric. 19. A method for forming a high precision analog capacitor on a semiconductor substrate, the method comprising: forming a field oxide layer over a portion of the substrate; forming a polysilicon layer over the field oxide layer; forming a silicide over the polysilicon layer, thereby defining a bottom plate of the capacitor; depositing undoped silicate glass over the substrate; depositing phosphosilicate glass over the substrate; densifying the undoped silicate glass and the phosphosilicate glass; planarizing the phosphosilicate glass; depositing undope