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A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expos

A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.

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1. A method of preparing a quartz body processing component for use in a semiconductor furnace, comprising cleaning said component to remove a build up silicon layer and to expose micro cracks in the surface of said component and to etch said cracks into trenches; applying a silicon layer onto said

1. A method of preparing a quartz body processing component for use in a semiconductor furnace, comprising cleaning said component to remove a build up silicon layer and to expose micro cracks in the surface of said component and to etch said cracks into trenches; applying a silicon layer onto said component to partially fill said trenches, and oxidizing at least a portion of said silicon to silica to further fill said trenches in the surface of said component. 2. The method of claim 1, comprising a plurality of sequential steps of applying said silicon layer and oxidizing at least a portion of said silicon to silica. 3. The method of claim 1, wherein said silicon oxide includes a dopant. 4. The method of claim 3, wherein said dopant is selected from the group consisting of boron, phosphorus and a combination of boron and phosphorus. 5. The method of claim 1, comprising withdrawing said component from an LPCVD furnace. 6. The method of claim 5, further comprising returning said component to said LPCVD furnace. 7. The method of claim 5, wherein said component has been cycled into and out of said LPCVD furnace during the processing of semiconductor wafers and prior to said cleaning step. 8. The method of claim 5, wherein said component is a cantilever arm, carrier or boat.