IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
|
출원번호 |
US-0067709
(2002-02-05)
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발명자
/ 주소 |
- Hashim, Imran
- Chiang, Tony
- Chin, Barry
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
33 인용 특허 :
86 |
초록
▼
Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and f
Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and forming via-to-via leakage current paths therein. In a second aspect, a capping dielectric barrier layer is deposited over the first metal layer prior to sputter etching. During sputter-etching, the capping dielectric barrier layer redistributes on the sidewalls of the interlayer dielectric, preventing sputter-etched copper atoms from reaching the interlayer dielectric and forming via-to-via leakage paths therein. In a third aspect, both a capping dielectric barrier layer and a barrier layer are deposited over the first metal layer prior to sputter-etching to prevent copper atoms produced during sputter-etching from reaching the interlayer dielectric and forming via-to-via leakage paths therein.
대표청구항
▼
Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and f
Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and forming via-to-via leakage current paths therein. In a second aspect, a capping dielectric barrier layer is deposited over the first metal layer prior to sputter etching. During sputter-etching, the capping dielectric barrier layer redistributes on the sidewalls of the interlayer dielectric, preventing sputter-etched copper atoms from reaching the interlayer dielectric and forming via-to-via leakage paths therein. In a third aspect, both a capping dielectric barrier layer and a barrier layer are deposited over the first metal layer prior to sputter-etching to prevent copper atoms produced during sputter-etching from reaching the interlayer dielectric and forming via-to-via leakage paths therein. Block et al.; US-5998244, 19991200, Wolstenholme et al.; US-6013159, 20000100, Adams et al.; US-6039850, 20000300, Schulz, 204/192.15; US-6072716, 20000600, Jacobson et al.; US-6077729, 20000600, Harshfield; US-6080665, 20000600, Chen et al.; US-6084796, 20000700, Kozicki et al.; US-6087689, 20000700, Reinberg; US-6104038, 20000800, Gonzalez et al.; US-6111264, 20000800, Wolstenholme et al.; US-6114713, 20000900, Zahorik; US-6117720, 20000900, Harshfield; US-6118135, 20000900, Gonzalez et al.; US-6126740, 20001000, Schulz et al.; US-6143124, 20001100, Ahn; US-6143604, 20001100, Chiang et al.; US-6147395, 20001100, Gilgen; US-6150253, 20001100, Doan et al.; US-6153890, 20001100, Wolstenholme et al.; US-6177338, 20010100, Liaw et al.; US-6187151, 20010200, Leiphart; US-6187682, 20010200, Denning et al., 204/192.3; US-6189582, 20010200, Reinberg et al.; US-6236059, 20010500, Wolstenholme et al.; US-6297170, 20011000, Gabriel et al.; US-6300684, 20011000, Gonzalez et al.; US-6316784, 20011100, Zahorik et al.; US-6329606, 20011200, Freyman et al.; US-6340603, 20020100, Bell, 438/016; US-6348365, 20020200, Moore et al.; US-6350679, 20020200, McDaniel et al.; US-6376284, 20020400, Gonzalez et al.; US-6388324, 20020500, Kozicki et al.; US-6391688, 20020500, Gonzalez et al.; US-6414376, 20020700, Thakur et al.; US-6418049, 20020700, Kozicki et al.; US-6423628, 20020700, Li et al.; US-6469364, 20021000, Kozicki; US-6487106, 20021100, Kozicki; US-20020000666, 20020100, Kozicki et al.; US-20020072188, 20020600, Gilton; US-20020106849, 20020800, Moore; US-20020123169, 20020900,
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