초록

The subject of the present invention is a hydroxy-kojic acid skin peel.

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The subject of the present invention is a hydroxy-kojic acid skin peel. pparatus. 23. A bonding apparatus for bonding a plurality of conductors to a plurality of bonding sites on a semiconductor die supported by a support located at a bonding location, said bonding apparatus comprising: at least

The subject of the present invention is a hydroxy-kojic acid skin peel. pparatus. 23. A bonding apparatus for bonding a plurality of conductors to a plurality of bonding sites on a semiconductor die supported by a support located at a bonding location, said bonding apparatus comprising: at least one energy source providing a plurality of energy beams; and an optical structure directing said plurality of energy beams toward said plurality of bonding sites on said semiconductor die. 24. The bonding apparatus of claim 23, wherein a bonding site of said plurality of bonding sites of said semiconductor die includes a contact pad of said semiconductor die. 25. The bonding apparatus of claim 23, wherein a bonding site of said plurality of bonding sites of said semiconductor die includes a lead of a lead frame. 26. The bonding apparatus of claim 23, wherein said at least one energy source includes a plurality of energy beam emitters, each energy beam emitter of said plurality of energy beam emitters directing at least one of said plurality of energy beams toward a bonding site of said plurality of bonding sites. 27. The bonding apparatus of claim 23, wherein said optical structure includes at least one reflective surface. 28. The bonding apparatus of claim 27, wherein said at least one reflective surface includes an articulatable reflective surface. 29. The bonding apparatus of claim 27, wherein said at least one reflective surface includes a translatable reflective surface. 30. The bonding apparatus of claim 27, wherein said at least one reflective surface includes at least one prism. 31. The bonding apparatus of claim 27, wherein said at least one reflective surface includes at least one mirror. 32. The bonding apparatus of claim 23, wherein said optical structure includes at least one fiber optic segment mounted in a path of at least one of said plurality of energy beams. 33. The bonding apparatus of claim 23, wherein said optical structure includes at least one beam splitter mounted in a path of at least one of said plurality of energy beams. 34. The bonding apparatus of claim 23, wherein said optical structure includes at least one lens mounted in a path of at least one of said plurality of energy beams. 35. The bonding apparatus of claim 23, wherein said optical structure includes at least one articulatable lens. 36. The bonding apparatus of claim 23, wherein said optical structure includes at least one optical flat mounted in a path of at least one of said plurality of energy beams, said at least one optical flat including a plurality of lenses, each lens of said plurality of lenses positioned to focus said at least one of said plurality of energy beams on said plurality of bonding sites. 37. The bonding apparatus of claim 36, wherein said at least one energy beam moves relative to said at least one optical flat so that said at least one energy beam may be directed through more than one of said plurality of lenses. 38. The bonding apparatus of claim 23, further including a chip indexer for indexing at least one semiconductor die and at least one lead frame to and from said semiconductor die support. 39. The bonding apparatus of claim 23, wherein said at least one energy source translates relative to at least one bonding site of said plurality of bonding sites of said semiconductor die. 40. The bonding apparatus of claim 26, wherein said plurality of energy beam emitters includes lasers. 41. The bonding apparatus of claim 40, wherein said lasers include a group comprising pulsed, solid state lasers, carbon dioxide lasers, Nd:YAG lasers, or Nd:YLF lasers. 42. The bonding apparatus of claim 23, wherein said at least one energy source includes a light source. 43. The bonding apparatus of claim 23, wherein said at least one energy source includes a heat source. 44. The bonding apparatus of claim 23, further including at least one microprocessor for controlling said bonding apparatus. 45. A bonding apparatus for a device located on a support at a bonding station comprising: an energy source prov iding a plurality of energy beams; and an optical structure mounted in a path of said plurality of energy beams for directing said plurality of energy beams toward a plurality of bonding sites of a device at said support for said device. 46. The bonding apparatus of claim 45, wherein a bonding site of said plurality of bonding sites of said device includes at least one contact pad of a semiconductor die. 47. The bonding apparatus of claim 45, wherein a bonding site of said plurality of bonding sites of said device includes at least one lead of a lead frame. 48. The bonding apparatus of claim 45, wherein said energy source includes a plurality of energy beam emitters, each energy beam emitter of said plurality of energy beam emitters directing at least one energy beam of said plurality of energy beams toward a different bonding site of said plurality of bonding sites. 49. The bonding apparatus of claim 45, wherein said optical structure includes at least one reflective surface mounted thereon. 50. The bonding apparatus of claim 49, wherein said at least one reflective surface includes a movable reflective surface. 51. The bonding apparatus of claim 49, wherein said at least one reflective surface includes a translatable reflective surface. 52. The bonding apparatus of claim 49, wherein said at least one reflective surface includes at least one prism. 53. The bonding apparatus of claim 49, wherein said at least one reflective surface includes at least one mirror. 54. The bonding apparatus of claim 45, wherein said optical structure includes at least one fiber optic segment mounted in a path of at least one of said plurality of energy beams. 55. The bonding apparatus of claim 45, wherein said optical structure includes at least one beam splitter mounted in a path of at least one of said plurality of energy beams. 56. The bonding apparatus of claim 55, wherein said at least one of said plurality of energy beams is movable relative to at least one optical flat for directing at least one of said plurality of energy beams through more than one of said plurality of lenses. 57. The bonding apparatus of claim 45, further including a chip indexer to index at least one semiconductor diet and at least one lead frame at said device support. 58. The bonding apparatus of claim 45, wherein said energy source includes a translatable energy source relative to at least one of said plurality of bonding sites of said device. 59. The bonding apparatus of claim 58, wherein said translatable energy source includes a group comprising pulsed, solid state lasers, carbon dioxide lasers, Nd:YAG lasers, or Nd:YLF lasers. 60. The bonding apparatus of claim 45, wherein said energy source includes a light source. 61. The bonding apparatus of claim 45, wherein said energy source includes a heat source. 62. The bonding apparatus of claim 45, further including at least one microprocessor for controlling said bonding apparatus. support pedestal and an RF power applied to the RF coil so as to sputter deposit the barrier layer onto the sidewalls and bottom of the via and sputter etch the barrier layer from the bottom of the via. 5. The process of claim 1 wherein step (a) includes applying power to the RF coil. 6. The process of claim 1 wherein steps (a) and (b) are performed sequentially. 7. The process of claim 1 wherein depositing a barrier layer comprises depositing at least one of tantalum and tantalum nitride. 8. The process of claim 1 wherein depositing a barrier layer comprises depositing tantalum. 9. A process for deposition of copper within a via having sidewalls and a bottom defined in a dielectric layer over a copper feature, comprising: in a high density plasma deposition chamber coupled to a transfer chamber, performing the steps of: depositing a barrier layer on the sidewalls and bottom of the via; and exposing at least a portion of the copper feature by sputtering both the barrier layer on the bottom of the via and any copper oxide layer on at least a portion of the copper feature; transferring the substrate from the high density plasma deposition chamber to a copper seed layer deposition chamber coupled to the transfer chamber without breaking vacuum; and in the copper seed layer deposition chamber, depositing a copper seed layer over the sidewalls and bottom of the via. 10. A process for deposition of copper within a via having sidewalls and a bottom defined in a dielectric layer over a copper feature, comprising: in a high density plasma deposition chamber coupled to a transfer chamber, performing the steps of: depositing a barrier layer on the sidewalls and bottom of the via; and reducing a thickness of the barrier layer on the bottom of the via by sputtering the barrier layer on the bottom of the via; transferring the substrate from the high density plasma deposition chamber to a copper seed layer deposition chamber coupled to the transfer chamber without breaking vacuum; and in the copper seed layer deposition chamber, depositing a copper seed layer over the sidewalls and bottom of the via. 11. The process of claim 10 wherein depositing a barrier layer comprises depositing tantalum. 12. A process for sputter depositing a barrier layer on a bottom and sidewalls of a via defined in a dielectric layer over a copper feature of a semiconductor substrate disposed on a support pedestal in a sputter deposition chamber having a sputtering target and an RF coil for coupling RF energy to a plasma maintained between the sputtering target and the support pedestal, the process comprising the steps of: (a) sputter depositing a barrier layer onto the sidewalls and bottom of the via by applying power to at least the sputtering target and the support pedestal; and (b) exposing at least a portion of the copper feature by sputtering both the barrier layer on the bottom of the via and any copper oxide layer on at least a portion of the copper feature by applying power to at least the RF coil and the support pedestal. 13. The process of claim 12 wherein depositing a barrier layer comprises depositing at least one of tantalum and tantalum nitride. 14. A process for deposition of a barrier layer within a via having sidewalls and a bottom defined in a dielectric layer over a copper feature, comprising: during a first time period, depositing a barrier layer on the sidewalls and bottom of the via; and during a second time period: depositing the barrier layer on the sidewalls and bottom of the via; and reducing a thickness of the barrier layer on the bottom of the via by sputtering the barrier layer on the bottom of the via, wherein depositing the barrier layer on the bottom of the via and reducing the thickness of the barrier layer on the bottom of the via occur simultaneously during at least a portion of the second time period. 15. The process of claim 14 wherein depositing a barrier layer comprises depositing at least