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Magnetic devices using nanocomposite materials 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11B-005/66
  • G11B-005/33
출원번호 US-0041910 (2002-01-07)
발명자 / 주소
  • Wang, Dexin
  • Qian, Zhenghong
  • Daughton, James M.
  • Fayfield, Robert T.
출원인 / 주소
  • NVE Corporation
대리인 / 주소
    Kinney & Lange, P.A.
인용정보 피인용 횟수 : 46  인용 특허 : 2

초록

A ferromagnetic thin-film based magnetoresistive device with a first ferromagnetic material based film having electrically conductive, ferromagnetic material nanogranules embedded in an intergranular material of a smaller electrical conductivity first nonmagnetic. The device may have an intermediate

대표청구항

A ferromagnetic thin-film based magnetoresistive device with a first ferromagnetic material based film having electrically conductive, ferromagnetic material nanogranules embedded in an intergranular material of a smaller electrical conductivity first nonmagnetic. The device may have an intermediate

이 특허에 인용된 특허 (2)

  1. Mallary Michael ; Gyasi Kofi, Laminated plated pole pieces for thin film magnetic transducers.
  2. Hayashi Kazuhiko,JPX, Magnetoresistive device.

이 특허를 인용한 특허 (46)

  1. Tzoufras, Michail; Gajek, Marcin Jan; Bozdag, Kadriye Deniz; El Baraji, Mourad, AC current write-assist in orthogonal STT-MRAM.
  2. Kent, Andrew; Bedau, Daniel; Liu, Huanlong, Bipolar spin-transfer switching.
  3. Kent, Andrew; Bedau, Daniel; Liu, Huanlong, Bipolar spin-transfer switching.
  4. Kent, Andrew; Bedau, Daniel; Liu, Huanlong, Current induced spin-momentum transfer stack with dual insulating layers.
  5. Kent, Andrew; Bedau, Daniel; Liu, Huanlong, Current induced spin-momentum transfer stack with dual insulating layers.
  6. Ohno, Hideo; Matsukura, Fumihiro; Chiba, Daichi; Yamanouchi, Michihiko, Current injection magnetic domain wall moving element.
  7. Kornev, Victor K.; Soloviev, Igor I.; Klenov, Nikolai V.; Mukhanov, Oleg A., High linearity superconducting radio frequency magnetic field detector.
  8. Kent,Andrew; Stein,Daniel, High speed low power annular magnetic devices based on current induced spin-momentum transfer.
  9. Kent, Andrew; Ozyilmaz, Barbaros; Gonzalez Garcia, Enrique, High speed low power magnetic devices based on current induced spin-momentum transfer.
  10. Kent, Andrew; Stein, Daniel L.; Beaujour, Jean-Marc, High speed low power magnetic devices based on current induced spin-momentum transfer.
  11. Kent, Andrew; Stein, Daniel; Beaujour, Jean-Marc, High speed low power magnetic devices based on current induced spin-momentum transfer.
  12. Ikeda, Kenji, High-frequency magnetic thin film and high-frequency electronic device.
  13. Kent, Andrew; Backes, Dirk, Increased magnetoresistance in an inverted orthogonal spin transfer layer stack.
  14. Lim, Chee-kheng, Information storage devices using magnetic domain wall movement and methods of manufacturing the same.
  15. Lim, Chee-kheng, Information storage devices using movement of magnetic domain wall and methods of manufacturing the information storage device.
  16. Lim, Chee-kheng; Cho, Eun-hyoung; Choa, Sung-hoon, Information storage devices using movement of magnetic domain walls and methods of manufacturing the same.
  17. Kent, Andrew; Backes, Dirk, Inverted orthogonal spin transfer layer stack.
  18. Schabes, Manfred Ernst; Kardasz, Bartlomiej Adam; Pinarbasi, Mustafa, MRAM with reduced stray magnetic fields.
  19. Aouba, Stephane; Ruda, Harry, Magnetic memory composition and method of manufacture.
  20. Nakamura,Shiho; Morise,Hirofumi, Magnetic recording element and magnetic memory.
  21. Pinarbasi, Mustafa; Kardasz, Bartek, Magnetic tunnel junction structure for MRAM device.
  22. Pinarbasi, Mustafa; Kardasz, Bartek, Memory cell having magnetic tunnel junction and thermal stability enhancement layer.
  23. Berger, Neal; Louie, Ben; El-Baraji, Mourad, Method and apparatus for bipolar memory write-verify.
  24. Pinarbasi, Mustafa, Method for manufacturing MTJ memory device.
  25. Pinarbasi, Mustafa, Method for manufacturing MTJ memory device.
  26. El Baraji, Mourad; Bozdag, Kadriye Deniz; Gajek, Marcin Jan; Tzoufras, Michail, Microwave write-assist in orthogonal STT-MRAM.
  27. El Baraji, Mourad; Bozdag, Kadriye Deniz; Gajek, Marcin Jan; Tzoufras, Michail, Microwave write-assist in series-interconnected orthogonal STT-MRAM devices.
  28. Schabes, Manfred Ernst; Pinarbasi, Mustafa Michael; Kardasz, Bartlomiej Adam, Perpendicular magnetic tunnel junction device with offset precessional spin current layer.
  29. Pinarbasi, Mustafa Michael; Hernandez, Jacob Anthony; Datta, Arindom; Gajek, Marcin Jan; Zantye, Parshuram Balkrishna, Polishing stop layer(s) for processing arrays of semiconductor elements.
  30. Tofigh, Farshid; Kruppa, Otmar; Khan, Imtiaz; Ghahramani, Iraj; Lawton, David; Policky, Kent, Power distribution system using solid state power controllers.
  31. Pinarbasi, Mustafa Michael; Tzoufras, Michail, Precessional spin current structure for MRAM.
  32. Pinarbasi, Mustafa Michael; Tzoufras, Michail; Kardasz, Bartlomiej Adam, Precessional spin current structure for MRAM.
  33. Braun,Daniel; Mueller,Gerhard, Read out scheme for several bits in a single MRAM soft layer.
  34. Kent, Andrew, Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates.
  35. Kent, Andrew, Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates.
  36. Lim, Chee-kheng; Kim, Eun-sik; Lee, Sung-chul, Semiconductor device using magnetic domain wall movement.
  37. Ryan, Eric Michael; Gajek, Marcin Jan; Bozdag, Kadriye Deniz; Tzoufras, Michail, Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM.
  38. Tofigh, Farshid; Kruppa, Otmar; Khan, Imtiaz; Ghahramani, Iraj; Lawton, David; Policky, Kent, Solid state power controllers including current sensing circuitry is configured to bias a general signal to a predetermined level in order to substantially eliminate the offset error in an amplifier and an A/D converter.
  39. Xie, Ya-Hong, Spin injector.
  40. Fuhrer, Andreas; Salis, Gian R, Spin logic based on persistent spin helices.
  41. Kardasz, Bartlomiej Adam; Pinarbasi, Mustafa Michael, Spin transfer torque structure for MRAM devices having a spin current injection capping layer.
  42. Kardasz, Bartlomiej Adam; Pinarbasi, Mustafa Michael, Spin transfer torque structure for MRAM devices having a spin current injection capping layer.
  43. Schabes, Manfred Ernst; Pinarbasi, Mustafa Michael; Kardasz, Bartlomiej Adam, Switching and stability control for perpendicular magnetic tunnel junction device.
  44. Zeltser, Alexander M., TMR sensor with a multilayered reference layer.
  45. Bozdag, Kadriye Deniz; Gajek, Marcin Jan; Tzoufras, Michail; Ryan, Eric Michael, Three-terminal MRAM with ac write-assist for low read disturb.
  46. Tofigh, Farshid; Kruppa, Otmar; Khan, Imtiaz; Ghahramani, Iraj; Lawton, David; Policky, Kent, Voltage sensing circuitry for solid state power controllers.
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