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Method of fabricating a thin film transistor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/336
출원번호 US-0897359 (1997-07-21)
우선권정보 JP-0174736 (1993-06-22); JP-0180754 (1993-06-25)
발명자 / 주소
  • Zhang, Hongyong
  • Teramoto, Satoshi
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson, Eric J.Robinson Intellectual Property Law Office, P.C.
인용정보 피인용 횟수 : 10  인용 특허 : 60

초록

Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline si

대표청구항

Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline si

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이 특허를 인용한 특허 (10)

  1. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  2. Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device.
  3. Emili,Walter; Goebel,Herbert; Wanka,Harald, Method for producing defined polycrystalline silicon areas in an amorphous silicon layer.
  4. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
  5. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  6. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
  7. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  8. Herman, Gregory; Mardllovich, Peter; Hoffman, Randy, Semiconductor devices and methods of making.
  9. Herman,Gregory; Mardilovich,Peter; Hoffman,Randy, Semiconductor devices and methods of making.
  10. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
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