A vehicle motor-generator apparatus based on a field winding type of synchronous machine coupled to a power inverter and a battery, wherein the synchronous machine is controlled to operate as a motor to perform engine starting and thereafter be driven by the engine as an electrical generator, wherei
A vehicle motor-generator apparatus based on a field winding type of synchronous machine coupled to a power inverter and a battery, wherein the synchronous machine is controlled to operate as a motor to perform engine starting and thereafter be driven by the engine as an electrical generator, wherein during a short time interval at the commencement of engine starting, the armature winding of the synchronous machine is driven by a current such that magnetic flux is produced by the armature winding acting in the same direction as magnetic flux produced by the field winding, to thereby achieve increased torque during the time when maximum torque is required. In addition, the supplied field current is set at a maximum value during only an initial period when engine starting begins, until the first compression stroke of the engine has been completed, and thereafter set to a reduced value until the completion of engine starting, thereby reducing the amount temperature rise within the field winding during engine starting, while ensuring a sufficiently high value of initial torque.
대표청구항▼
A vehicle motor-generator apparatus based on a field winding type of synchronous machine coupled to a power inverter and a battery, wherein the synchronous machine is controlled to operate as a motor to perform engine starting and thereafter be driven by the engine as an electrical generator, wherei
A vehicle motor-generator apparatus based on a field winding type of synchronous machine coupled to a power inverter and a battery, wherein the synchronous machine is controlled to operate as a motor to perform engine starting and thereafter be driven by the engine as an electrical generator, wherein during a short time interval at the commencement of engine starting, the armature winding of the synchronous machine is driven by a current such that magnetic flux is produced by the armature winding acting in the same direction as magnetic flux produced by the field winding, to thereby achieve increased torque during the time when maximum torque is required. In addition, the supplied field current is set at a maximum value during only an initial period when engine starting begins, until the first compression stroke of the engine has been completed, and thereafter set to a reduced value until the completion of engine starting, thereby reducing the amount temperature rise within the field winding during engine starting, while ensuring a sufficiently high value of initial torque. testing probe, and said first and second regions are lined up in a direction substantially perpendicular to said straight line, wherein said plurality of bonding pads comprises a first group of bonding pads with said first regions in a first direction and said second regions in a second direction, and a second group of bonding pads provided with said second regions in said first direction and said first regions in said second direction, a member provided with a plurality of conductors containing a third region as a connection region electrically connected to each of a plurality of external connection terminals and a securing area for securing said semiconductor chip, a plurality of conductor wires that electrically connect said first regions of said plurality of bonding pads to said third regions of said plurality of conductors, and an encapsulating member that encapsulates said semiconductor chip and said plurality of conductor wires. 2. The semiconductor device according to claim 1 wherein said first and second groups of bonding pads are alternately arranged. 3. The semiconductor device according to claim 1 wherein said plurality of bonding pads are rectangular in shape with their short sides lying in a direction along the edges of said semiconductor chip. 4. The semiconductor device according to claim 1 wherein said plurality of bonding pads are formed with the width of said first region being wider than the width of said second region in the direction along the edges of said semiconductor chip. 5. The semiconductor device according to claim 1 wherein said plurality of bonding pads have notches between said first region and said second region. 6. The semiconductor device according to claim 1 wherein said member is an insulating substrate upon one surface of which said semiconductor chip is secured by adhesive, said external connection terminals are roughly spherical terminals formed on the other surface of said substrate, said encapsulating member is resin that encapsulates said semiconductor chip and said plurality of conductor wires on one surface of said substrate, and the lands as said third regions are electrically connected to said roughly spherical terminals via through holes. 7. A method of manufacturing semiconductor devices comprising: disposing roughly upon a straight line on a semiconductor chip a plurality of bonding pads containing a first region as a connection region and a second region for making contact with a testing probe, and said first and second regions are lined up in a direction perpendicular to said straight line, wherein said plurality of bonding pads comprises a first group of bonding pads with said first regions in a first direction and said second regions in a second direction, and a second group of bonding pads provided with said second regions in said first direction and said first regions in said second direction, providing a member with a plurality of conductors containing a third region as a connection region electrically connected to each of a plurality of external connection terminals, and a securing area for securing said semiconductor chip, and disposing a plurality of conductor wires to electrically connect said first regions of said plurality of bonding pads to said third regions of said plurality of conductors. 8. The method of manufacturing semiconductor devices according to claim 7 wherein said first and second groups of bonding pads are alternately arranged. 9. The method of manufacturing semiconductor devices according to claim 8 wherein said connection step comprises: a first step wherein said first region of said plurality of first bonding pads are connected by conductor wire to said third regions of said plurality of conductors, and a second step wherein said first region of said plurality of second bonding pads are connected by conductor wire to said third regions of said plurality of conductors. 10. The method of manufacturing semiconductor devices according to claim 7 further comprising a step wherein, prior to securing said semiconductor chip to said securing area, testing of said semiconductor chip is performed by putting test probes into contact with the second regions of said plurality of bonding pads. 11. The semiconductor device according to claim 2 wherein said plurality of bonding pads are rectangular in shape with their with short sides lying in a direction along the edges of said semiconductor chip. 12. The semiconductor device according to claim 2 wherein said plurality of bonding pads are formed with the width of said first region being wider than the width of said second region in the direction along the edges of said semiconductor chip. 13. The semiconductor device according to claim 2 wherein said plurality of bonding pads have notches between said first region and said second region. 14. The semiconductor device according to claim 2 wherein said member is an insulating substrate upon one surface of which said semiconductor chip is secured by adhesive, said external connection terminals are roughly spherical terminals formed on the other surface of said substrate, said encapsulating member is resin that encapsulates said semiconductor chip and said plurality of conductor wires on one surface of said substrate, and the lands as said third regions are electrically connected to said roughly spherical terminals via through holes. 15. The semiconductor device according to claim 3 wherein said member is an insulating substrate upon one surface of which said semiconductor chip is secured by adhesive, said external connection terminals are roughly spherical terminals formed on the other surface of said substrate, said encapsulating member is resin that encapsulates said semiconductor chip and said plurality of conductor wires on one surface of said substrate, and the lands as said third regions are electrically connected to said roughly spherical terminals via through holes. 16. The semiconductor device according to claim 4 wherein said member is an insulating substrate upon one surface of which said semiconductor chip is secured by adhesive, said external connection terminals are roughly spherical terminals formed on the other surface of said substrate, said encapsulating member is resin that encapsulates said semiconductor chip and said plurality of conductor wires on one surface of said substrate, and the lands as said third regions are electrically connected to said roughly spherical terminals via through holes. 17. The semiconductor device according to claim 5 wherein said member is an insulating substrate upon one surface of which said semiconductor chip is secured by adhesive, said external connection terminals are roughly spherical terminals formed on the other surface of said substrate, said encapsulating member is resin that encapsulates said semiconductor chip and said plurality of conductor wires on one surface of said substrate, and the lands as said third regions are electrically connected to said roughly spherical terminals via through holes. 18. The method of manufacturing semiconductor devices according to claim 8 further comprising a step wherein, prior to securing said semiconductor chip to said securing area, testing of said semiconductor chip is performed by putting test probes into contact with the second regions of said plurality of bonding pads. 19. The method of manufacturing semiconductor devices according to claim 9 further comprising a step wherein, prior to said securing said semiconductor chip to said securing area, testing of said semiconductor chip is performed by putting test probes into contact with the second regions of said plurality of bonding pads. 20. A semiconductor device; comprising: a plurality of bond pads arranged on a semiconductor chip, each of said bond pads in said plurality comprising a bond region and a probe region, said plurality of bond pads comprising two groups of bond pads, a first group of bond pads arranged with b
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