$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

[미국특허] Method for controlling pH during planarization and cleaning of microelectronic substrates 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-007/00
출원번호 US-0843293 (2001-04-24)
발명자 / 주소
  • Sharples, Judson R.
  • Zacharias, Kenneth F.
  • Hudson, Guy F.
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Dorsey & Whitney LLP
인용정보 피인용 횟수 : 2  인용 특허 : 45

초록

A method and apparatus for processing a microelectronic substrate. In one embodiment, the method can include planarizing the microelectronic substrate with a planarizing liquid and rinsing the substrate with a rinsing liquid having a pH approximately the same as a pH of the planarizing liquid. The r

대표청구항

A method and apparatus for processing a microelectronic substrate. In one embodiment, the method can include planarizing the microelectronic substrate with a planarizing liquid and rinsing the substrate with a rinsing liquid having a pH approximately the same as a pH of the planarizing liquid. The r

이 특허에 인용된 특허 (45) 인용/피인용 타임라인 분석

  1. Haas John D. (Woodbury MN) Christianson Todd J. (Oakdale MN) Bruxvoort Wesley J. (Woodbury MN), Abrasive article, a process for its manufacture, and a method of using it to reduce a workpiece surface.
  2. Rutherford Denise R. (Stillwater MN) Goetz Douglas P. (St. Paul MN) Thomas Cristina U. (Woodbury MN) Webb Richard J. (Inver Grove Heights MN) Bruxvoort Wesley J. (Woodbury MN) Buhler James D. (Shring, Abrasive construction for semiconductor wafer modification.
  3. Kirk Alan R. (St. Paul MN) Larson Eric G. (St. Paul MN), Abrasive product having binder comprising an aminoplast resin.
  4. Skrovan John (Boise ID), Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor.
  5. Southwick Scott A., Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semicon.
  6. Brunelli Thad ; Garrison Gina ; Van Buren Wade, Apparatus for loading and unloading substrates to a chemical-mechanical planarization machine.
  7. Lund Douglas E. (13304 Purple Sage Dallas TX 75240), Automatic chemical and mechanical polishing system for semiconductor wafers.
  8. Brancaleoni Gregory (Newark DE) Cook Lee M. (Steelville PA), Compositions and methods for polishing.
  9. Jackson Paul D. (Scottsdale AZ) Schultz Stephen C. (Gilbert AZ) Sanford James E. (Mesa AZ) Ong Glen (Tempe AZ) Rice Richard B. (Chandler AZ) Modi Parag S. (Phoenix AZ) Baca John G. (Tempe AZ), Conditioner for a polishing pad and method therefor.
  10. Hirabayashi Hideaki (Tokyo JPX) Higuchi Masatoshi (Kawasaki JPX), Copper-based metal polishing solution and method for manufacturing semiconductor device.
  11. Morrison William R. ; Hunt Kyle P., High selectivity oxide to nitride slurry.
  12. Sandhu Gurtej S. (Boise ID) Yu Chris C. (Austin TX), IC chemical mechanical planarization process incorporating slurry temperature control.
  13. Fisher Wayne G. (Allen TX), Integrated circuit planarization by mechanical polishing.
  14. Jain Manoj K. (Plano TX), Mechanical scrubbing for particle removal.
  15. Stager Charles W. ; Kobayashi Thomas S. ; Page Joseph E. ; Zaleski Mark A. ; Winebarger Paul M., Metallized pad polishing process.
  16. Cibulsky Edward ; Kiballa Gerald Andrew ; Markovich Voya Rista ; Newman Gary Leigh ; Prikazsky John Francis ; Wozniak Michael, Method and apparatus for polishing metal surfaces.
  17. Gonnella Norman T. (Rochester MN) Starcke Steven F. (Rochester MN), Method and apparatus for texturing zones of a magnetic disk.
  18. Hudson Guy F., Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad.
  19. Awad Sami B. (Drexel Hill PA), Method for cleaning and drying of metallic and nonmetallic surfaces.
  20. Robinson Karl M., Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers.
  21. Fiordalice Robert W. (Austin TX) Maniar Papu D. (Austin TX) Klein Jeffrey L. (Austin TX), Method for forming inlaid interconnects in a semiconductor device.
  22. Bawa Mohendra S. ; Simpson Vikki Sue ; Miller Palmer A. ; Allen Franklin Louis ; Etheridge Gary Lee ; L'Anglois Kenneth John ; Grimes Michael H., Method for maintaining the buffer capacity of siliceous chemical-mechanical silicon polishing slurries.
  23. Gonzales David (Boise ID) Hudson Guy F. (Boise ID), Method for post chemical-mechanical planarization cleaning of semiconductor wafers.
  24. Gonzales David ; Hudson Guy F., Method for post chemical-mechanical planarization cleaning of semiconductor wafers.
  25. Yu Chris C. (Boise ID) Doan Trung T. (Boise ID) Laulusa Alan E. (Boise ID), Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing.
  26. Carr Jeffrey W. (Fishkill NY) David Lawrence D. (Wappingers Falls NY) Guthrie William L. (Hopewell Junction NY) Kaufman Frank B. (Amawalk NY) Patrick William J. (Newburgh NY) Rodbell Kenneth P. (Poug, Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor.
  27. Doan Trung T. (Boise ID), Method of etching back of tungsten layers on semiconductor wafers, and solution therefore.
  28. Nilarp Anders (Rancho Palos Verdes CA), Method of manufacture of semiconductor device.
  29. Sandhu Gurtej S. (Boise ID) Westmoreland Donald L. (Boise ID) Doan Trung T. (Boise ID), Methods of chemical-mechanical polishing insulating inorganic metal oxide materials.
  30. Rostoker Michael D. (San Jose CA) Pasch Nicholas F. (Pacifica CA), Methods of cleaning semiconductor substrates after polishing.
  31. Smith Harold Vernon (Philadelphia PA), Non-chromated alkaline etching bath and etching process for aluminum.
  32. Budinger William D. (Kennett Square PA) Jensen Elmer W. (Wilmington DE), Pad material for grinding, lapping and polishing.
  33. Fukami Teruaki,JPX ; Takaku Tsutomu,JPX, Polishing agent used for polishing semiconductor silicon wafers and polishing method using the same.
  34. Baldy Andr (Seyssins FRX) Barrois Grard (Le Fontanil FRX) Blanc Henri (Saint Julien de Ratz FRX) Dominiak Marcel (Grenoble FRX), Polishing machine having a taut microabrasive strip and an improved wafer support head.
  35. Robinson Karl M. (Boise ID), Polishing pad and a method for making a polishing pad with covalently bonded particles.
  36. Takiyama Masahiro (Shiojiri JPX) Miyazaki Kunihiro (Shiojiri JPX) Shiozawa Kenichiro (Ashiya JPX), Polishing pad for semiconductor wafers.
  37. Reinhardt Heinz F. (Chadds Ford PA) Roberts John V. H. (Newark DE) McClain Harry G. (Middletown DE) Budinger William D. (Newark DE) Jensen Elmer W. (New Castle DE), Polymeric polishing pad containing hollow polymeric microelements.
  38. Prigge Helene (Unterschleissheim DEX) Schnegg Anton (Burghausen DEX) Brehm Gerhard (Emmerting DEX), Process for preserving the surface of silicon wafers.
  39. Liu Benjamin Y. H. (North Oaks MN) Ahn Kang H. (Minneapolis MN), Process for surface and fluid cleaning.
  40. Cote William J. (Poughquag NY) Lee Pei-Ing P. (Williston VT) Sandwick Thomas E. (Hopewell Junction NY) Vollmer Bernd M. (Wappingers Falls NY) Vynorius Victor (Pleasant Valley NY) Wolff Stuart H. (Tul, Refractory metal capped low resistivity metal conductor lines and vias.
  41. Bose Amitava (Nashua NH) Garver Marion M. (Marlborough MA) Nasr Andre I. (Marlborough MA) Cooperman Steven S. (Southborough MA), Shallow trench isolation process for high aspect ratio trenches.
  42. Cadien Kenneth C. (Portland OR) Feller Daniel A. (Portland OR), Slurries for chemical mechanical polishing.
  43. Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Slurries for chemical mechanically polishing copper containing metal layers.
  44. Aoyama Tetsuo (Niigata JPX) Takahashi Mayumi (Niigata JPX) Kondo Toshio (Niigata JPX) Fukuda Hideki (Niigata JPX), Surface treating agent for aluminum line pattern substrate.
  45. Cote William J. (Essex Junction VT) Leach Michael A. (Bristol VT), Wafer flood polishing.

이 특허를 인용한 특허 (2) 인용/피인용 타임라인 분석

  1. Deng, Wufeng, Chemical mechanical planarization apparatus and methods.
  2. Filipozzi,Laurent; Metral,Frederic, Surface preparation for receiving processing treatments.

활용도 분석정보

상세보기
다운로드
내보내기

활용도 Top5 특허

해당 특허가 속한 카테고리에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.

섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로