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A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2cleaning process on the acid-washed component. The inventive method has been fo

A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.

대표청구항 ▼

1. A semiconductor processing component having an inorganic surface, the inorganic surface having a contaminant particle density of at most about 0.4 particles per square centimeter that are larger than about 0.3 &mgr;m and having a surface metallic contaminant concentration of at most about 600 ppm

1. A semiconductor processing component having an inorganic surface, the inorganic surface having a contaminant particle density of at most about 0.4 particles per square centimeter that are larger than about 0.3 &mgr;m and having a surface metallic contaminant concentration of at most about 600 ppm, as measured by SIMS at a depth of about 10 nm. 2. A semiconductor processing component having an inorganic surface, the inorganic surface having a contaminant particle density of at most about 0.4 particles per square centimeter that are larger than about 0.3 &mgr;m and having a surface concentration of metal contaminants other than alkaline and alkaline earth metals of at most about 400 ppm, as measured by SIMS at a depth of about 10 nm. 3. A semiconductor processing component having an inorganic surface, the inorganic surface having a contaminant particle density of at most about 0.4 particles per square centimeter that are larger than about 0.3 &mgr;m and having a surface iron contaminant concentration of at most about 225 ppm, as measured by SIMS at a depth of about 10 nm. 4. A semiconductor processing component as in any of claims 1-3, wherein the inorganic surface is formed by chemical vapor deposition.5. A semiconductor processing component as in any of claims 1-3, wherein the inorganic surface lacks a CVD coating.6. A semiconductor processing component as in any of claims 1-3, wherein the inorganic surface is a contoured surface.7. A semiconductor processing component as in any of claims 1-3, wherein the inorganic surface is a contoured surface including at least one region having an aspect ratio of at least 4:1.8. A semiconductor processing component as in any of claims 1-3, which comprises a bell jar, electrostatic chuck, focus ring, shadow ring, chamber, susceptor, lift pin, dome, end effector, liner, support, injector port, manometer port, wafer insert passage, screen plate, heater, vacuum chuck, paddle, process tube, wafer boat, liner, pedestal, long boat, vertical boat, dummy wafer, conditioning pad and wafer holder.9. A semiconductor processing component as in any of claims 1-3, wherein the inorganic surface comprises a ceramic surface.10. A semiconductor processing component as in any of claims 1-3, wherein the surface is selected from the group consisting of Si, diamond, Y2O3, ZrO2, SiC, Si3N4, AlN, Al2O3and quartz.11. A semiconductor processing component as in any of claims 1-3, wherein the surface is a machined surface.12. A semiconductor processing component as in any of claims 1-3, wherein the surface is a vapor-deposited material.13. A semiconductor processing component as in any of claims 1-3, wherein the surface is a vapor-deposited material selected from the group consisting of CVD Si, CVD SiO2, CVD SiC, CVD Si3N4, CVD diamond, Y2O3and ZrO2.