Glass and glass tube for encapsulating semiconductors
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/29
C03C-030/91
출원번호
US-0314357
(2002-12-09)
우선권정보
JP-0143990 (2000-05-16)
발명자
/ 주소
Kosokabe, Hiroyuki
출원인 / 주소
Nippon Electric Glass Co., Ltd.
대리인 / 주소
Nixon & Vanderhye
인용정보
피인용 횟수 :
6인용 특허 :
7
초록▼
Glass, for encapsulating a semiconductor, which is substantially free of lead or other harmful ingredients, but which exhibits a sealing temperature of not higher than 710° C., and which stably seals with Dumet. Further, when the glass has a viscosity of 106dPa·s, the temperature of said glass is no
Glass, for encapsulating a semiconductor, which is substantially free of lead or other harmful ingredients, but which exhibits a sealing temperature of not higher than 710° C., and which stably seals with Dumet. Further, when the glass has a viscosity of 106dPa·s, the temperature of said glass is not higher than 710° C., and includes two or more of Li2O, Na2O and K2O and B2O3. Also, the glass may comprise: SiO2, B2O3and Al2O3in an amount of from 40 to 70%, from 5 to 20% and from 0 to 15% by weight, respectively; MgO, CaO, SrO, BaO and ZnO in a total amount of from 0 to 45% by weight; and Li2O, Na2O and K2O in a total amount of from 5 to 25% by weight.
대표청구항▼
1. An encapsulator, for encapsulating a semiconductor, wherein the encapsulator is in the form of a tube and capable of hermetically encapsulating the semiconductor which is clamped by an electrode material in the tube, wherein said encapsulator is free of lead,wherein, when said encapsulator has a
1. An encapsulator, for encapsulating a semiconductor, wherein the encapsulator is in the form of a tube and capable of hermetically encapsulating the semiconductor which is clamped by an electrode material in the tube, wherein said encapsulator is free of lead,wherein, when said encapsulator has a viscosity of 106dPa s, the temperature of said encapsulator is not higher than 710° C., andwherein said encapsulator is a glass tube made of SiO2—B2O3—Al2O3glass comprising:SiO2in an amount of from 40 to 70% by weight:B2O3;Al2O3; andat least two of Li2O, Na2P and K2O in a total amount of from 10 to 25% by weight.2. The encapsulator, for encapsulating a semiconductor, according to claim 1, wherein said glass forming the glass tube has a thermal expansion coefficient of from 85×10−7to 105×10−7/° C. at a temperature of from 30° C. to 380° C.3. The encapsutator, for encapsulating a semiconductor, according to claim 1, wherein said glass forming the glass tube further comprises MgO, CaO, SrO, BaO and/or ZnO.4. The encapsulator, for encapsulating a semiconductor, according to claim 3, wherein said glass forming the glass tube contains MgO, GaO, SrO, BaO and/or ZnO in a total amount of from 5 to 45% by weight.5. The encapsulator, for encapsulating a semiconductor, according to claim 4, wherein said glass forming the glass tube contains ZnO in an amount of 1% by weight or more.6. The encapsulator, for encapsulating a semiconductor, according to claim 1, wherein said glass forming the glass tube contains B2O3in an amount of 5% by weight or more.7. The encapsulator, for encapsulating a semiconductor, according to claim 1, wherein said glass forming the glass tube contains Li2O in an amount of 0.5% by weight or more.
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이 특허에 인용된 특허 (7)
Jung Kyu Jin,KRX ; Darbha Sury N. ; Kaercher Austin S. ; Jang Myungseok,KRX, Electronic component encapsulated in a glass tube.
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