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다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0041156 (2002-01-08) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 129 인용 특허 : 328 |
A document processing system comprises an input receptacle for receiving documents. A transport mechanism receives the documents from the input receptacle and transports the documents past a full image scanner and a discrimination unit. An output receptacle receives the documents from the transport
A document processing system comprises an input receptacle for receiving documents. A transport mechanism receives the documents from the input receptacle and transports the documents past a full image scanner and a discrimination unit. An output receptacle receives the documents from the transport mechanism after being transported past the full image scanner and the discrimination unit. The full image scanner includes means for obtaining a full video image of said documents, means for obtaining a image of a selected area of said documents, and means for obtaining information contained in said selected area of said document. The discrimination unit includes means for determining the authenticity of said document. A system controller directs the flows of documents over the transport mechanism.
A document processing system comprises an input receptacle for receiving documents. A transport mechanism receives the documents from the input receptacle and transports the documents past a full image scanner and a discrimination unit. An output receptacle receives the documents from the transport
A document processing system comprises an input receptacle for receiving documents. A transport mechanism receives the documents from the input receptacle and transports the documents past a full image scanner and a discrimination unit. An output receptacle receives the documents from the transport mechanism after being transported past the full image scanner and the discrimination unit. The full image scanner includes means for obtaining a full video image of said documents, means for obtaining a image of a selected area of said documents, and means for obtaining information contained in said selected area of said document. The discrimination unit includes means for determining the authenticity of said document. A system controller directs the flows of documents over the transport mechanism. semiconductor confinement layer collectively comprise a heterostructure having a pn-junction (depletion region) substantially close to and within the active region;vii) a P-type contact layer;viii) at least one dielectric layer, each of the at least one dielectric layer having a via etched through it providing electrical contact access to the P-type contact layer;ix) a second metal contact layer contacting the P-type contact layer,wherein the N-type semiconductor optical trap layer has a higher refractive index than the N-type semiconductor substrate and the N-type semiconductor confinement layer.2. A semiconductor laser according to claim 1 wherein the plurality of layers are cleaved in at least two places along a crystallographic plane, that is perpendicular to plane of the layers, forming a resonating cavity having mirror facets on both ends.3. The semiconductor laser of claim 2, wherein the two mirror facets are coated with respective first and second dielectric materials.4. The semiconductor laser of claim 3, wherein the first dielectric material is highly reflective.5. The semiconductor laser of claim 4, wherein the second dielectric material is less reflective than the first dielectric material.6. A semiconductor laser according to claim 1 wherein the semiconductor laser produces internally a laterally confined asymmetrical optical mode having a peak optical intensity substantially in the active region, the asymmetrical optical mode having an optical intensity distribution through the plurality of layers that has substantially more optical mode energy distributed within the N-type semiconductor confinement layer, the N-type semiconductor optical trap layer and the N-type semiconductor substrate layer as compared to an amount of optical mode energy present in the P-type semiconductor confinement layer.7. The semiconductor laser of claim 6, further comprising a ridge structure, wherein the P-type semiconductor confinement layer is partially within the ridge structure, the ridge structure laterally confining the laterally confined asymmetrical optical mode.8. The semiconductor laser of claim 1, wherein the active region comprises a plurality of quantum wells, each quantum well sandwiched between two barrier layers.9. The semiconductor laser of claim 1 further comprising an etch-stop layer embedded within the P-type semiconductor confinement layer.10. The semiconductor laser of claim 1, further comprising a ridge structure, wherein the P-type semiconductor confinement layer is substantially within the ridge structure.11. The semiconductor laser of claim 1, further comprises a ridge structure containing a substantial portion of the P-type semiconductor confinement layer.12. The semiconductor laser of claim 1, wherein the semiconductor laser ofclaim 1, wherein the N-type semiconductor substrate layer is N-type InP.13. The semiconductor laser of claim 1, wherein the N-type semiconductor optical trap layer is an N-type InGaAsP alloy.14. The semiconductor laser of claim 1, wherein the N-type semiconductor confinement layer is N-type InP.15. The semiconductor laser of claim 1, wherein the active region is substantially made up of an InGaAsP alloy.16. The semiconductor laser of claim 1, wherein P-type semiconductor confinement layer is P-type InP.17. The semiconductor laser of claim 1 further comprising below the N-type semiconductor optical trap layer at least one additional N-type semiconductor confinement layer and at least one additional N-type semiconductor optical trap layer.18. The semiconductor laser of claim 17, further comprising an etch-stop layer embedded within the P-type semiconductor confinement layer.19. The semiconductor laser of claim 18, further comprising a ridge structure, wherein the P-type semiconductor confinement layer is substantially within the ridge structure.20. The semiconductor laser of claim 1, wherein the N-type semi conductor optical trap layer comprises a plurality of sub-layers.21. A semiconductor laser comprising a plurality of layers, the plurality of layers in sequence including: (i) an active region, the active region comprising semiconductor materials;(ii) a first N-type semiconductor confinement layer;(iii) an N-type semiconductor optical trap layer;(iv) a second N-type semiconductor confinement layer;the laser internally generating an asymmetrical optical mode, the asymmetrical optical mode having a single maximum optical intensity peak substantially in the active region and optical intensity distribution that has substantially more of the optical mode energy distributed to a first side of the active region in the optical trap layer and the first and second confinement layers as compared to the amount of the optical mode energy on an opposite second side of the active region.22. A semiconductor heterostructure comprising a plurality of layers, the plurality of layers in sequence comprising: i) a first metal contact layer;ii) an N-type semiconductor substrate;iii) a first N-type semiconductor optical trap layer;iv) a first N-type semiconductor confinement layer;v) a second N-type semiconductor optical trap layer;vi) a second N-type semiconductor confinement layer;vii) an active region, the active region comprising semiconductor materials;viii) a P-type semiconductor confinement layer, wherein the P-type semiconductor confinement layer, the active region and the second N-type semiconductor confinement layer collectively comprise a heterostructure having a pn-junction (depletion region) substantially close to and within the active region;ix) a P-type contact layer;x) at least one dielectric layer, each of the at least one dielectric layers having a via etched through it providing electrical contact access to the P-type contact layer that is below the dielectric layer;xi) a second metal contact layer contacting the P-type contact layer,wherein the first N-type semiconductor optical trap layer has a higher refractive index than the N-type semiconductor substrate and the first N-type semiconductor confinement layer, and the second N-type semiconductor optical trap layer has a higher refractive index than the first N-type semiconductor confinement layer and the second N-type semiconductor confinement layer.23. A semiconductor heterostructure according to claim 22 wherein the plurality of layers are cleaved in two places along a crystallographic plane, that is perpendicular to plane of the layers, forming a resonating cavity having mirror facets on both ends.24. The semiconductor heterostructure of claim 23, wherein the two mirror facets are coated with respective first and second dielectric materials.25. The semiconductor heterostructure of claim 24, wherein the first and second dielectric materials both have low reflectivity.26. A semiconductor heterostructure according to claim 22 wherein the semiconductor heterostructure is adapted to support internally a laterally confined asymmetrical optical mode, the asymmetrical optical mode having a peak optical intensity substantially in the intrinsic semiconductor layer, the asymmetrical optical mode having an optical intensity distribution through the plurality of layers that has substantially more optical mode energy distributed within the first and second N-type semiconductor confinement layers, the first and second N-type semiconductor optical trap layers and the N-type semiconductor substrate layer as compared to an amount of optical mode energy present in the P-type semiconductor confinement layer.27. The semiconductor heterostructure of claim 23, wherein the first dielectric material i
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