초록 ▼

A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged regions are formed, in the substrate, between

A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged regions are formed, in the substrate, between the first damaged regions. The film is caused to detach from a rest of the substrate at a location where the first and second damaged regions are formed.

대표청구항 ▼

1. A semiconductor substrate comprising: a plurality of active devices formed onto said substrate; anda plurality of damaged regions formed in said, substrate, each damaged region corresponding to one of said plurality of active devices and located in said substrate underneath a corresponding active

1. A semiconductor substrate comprising: a plurality of active devices formed onto said substrate; anda plurality of damaged regions formed in said, substrate, each damaged region corresponding to one of said plurality of active devices and located in said substrate underneath a corresponding active device.2. The semiconductor substrate of claim 1 wherein said damaged regions are formed by way of ion implantation.3. The semiconductor substrate of claim 1 wherein each damaged region includes a plurality of bubbles.4. A semiconductor substrate comprising: a plurality of active devices farmed onto said substrate;a plurality of first damaged regions formed in said substrate, each first damaged region corresponding to one of said plurality of active devices and located in said substrate underneath a corresponding active device; anda plurality of second damaged regions formed, in said substrate, between said first damaged regions.5. The semiconductor substrate of claim 4 wherein said first damaged regions are formed by way of ion implantation.6. The semiconductor substrate of claim 4 wherein said second damaged regions are formed by way of ion implantation.7. The semiconductor substrate of claim 4 wherein each first damaged region includes a plurality of bubbles.8. The semiconductor substrate of claim 7 wherein each second damaged region includes a void.