초록 ▼

A method for atomic layer deposition providing a dispenser unit used to prevent mixing of a precursor gas and an input gas is disclosed. From the dispenser unit a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the in

A method for atomic layer deposition providing a dispenser unit used to prevent mixing of a precursor gas and an input gas is disclosed. From the dispenser unit a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the input gas in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The input gas is dissociated by the beam producing a high flux paint of use generated reactive gas species that reacts with a surface reactant formed on the surface of the workpiece by a direct flow of the precursor gas flown from the dispensing unit. The surface reactant and reactive gas species react to form a desired monolayer of a material on the surface of the workpiece.

대표청구항 ▼

A method for atomic layer deposition providing a dispenser unit used to prevent mixing of a precursor gas and an input gas is disclosed. From the dispenser unit a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the in

A method for atomic layer deposition providing a dispenser unit used to prevent mixing of a precursor gas and an input gas is disclosed. From the dispenser unit a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the input gas in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The input gas is dissociated by the beam producing a high flux paint of use generated reactive gas species that reacts with a surface reactant formed on the surface of the workpiece by a direct flow of the precursor gas flown from the dispensing unit. The surface reactant and reactive gas species react to form a desired monolayer of a material on the surface of the workpiece. s reached.4. The method defined in claim 1 wherein said thin film coating is an optical coating.5. The method defined in claim 1, further comprising the step of depositing a reaction product of a component from another crucible and said at least one gas on said substrate following the deposition of said coating thereon.6. The method defined in claim 1, further comprising the step of directing another electron beam from an electron beam gun onto said component in said crucible.7. A method of applying a thin film coating to a substrate, comprising the steps of: (a) mounting a substrate to be coated on a substrate holder in an evacuatable chamber and so that said substrate is spacedly juxtaposed with a crucible containing a component of a coating to be applied to said substrate; (b) evacuating said chamber; (c) positioning a shutter between said crucible and said substrate and heating said component in said crucible with a high energy electron beam; (d) admitting a gas mixture to said chamber; (e) connecting said substrate holder to a radio frequency or pulsed direct current source so that said substrate holder is poled cathodic and a plasma is formed at least around said substrate to create a self bias of several hundreds of volts on said substrate holder and a surface of said substrate is bombarded with particles from the plasma; (f) withdrawing said shutter from its position between said crucible and said substrate, bombarding said component with low energy electrons to ionize said component at least in part and depositing said component and said at least one gas on said substrate; and (g) controlling the ionization of said component so that said self bias is reduced by at least 50%.