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A bi-polar separator plate constructed of a graphite/carbon composition and having a substantially flat peripheral sealing region on each face in which substantially flat peripheral sealing region a silicone gasket is disposed. The silicone gasket is applied to the bi-polar separator plate by a scre

A bi-polar separator plate constructed of a graphite/carbon composition and having a substantially flat peripheral sealing region on each face in which substantially flat peripheral sealing region a silicone gasket is disposed. The silicone gasket is applied to the bi-polar separator plate by a screen-printing process.

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A bi-polar separator plate constructed of a graphite/carbon composition and having a substantially flat peripheral sealing region on each face in which substantially flat peripheral sealing region a silicone gasket is disposed. The silicone gasket is applied to the bi-polar separator plate by a scre

A bi-polar separator plate constructed of a graphite/carbon composition and having a substantially flat peripheral sealing region on each face in which substantially flat peripheral sealing region a silicone gasket is disposed. The silicone gasket is applied to the bi-polar separator plate by a screen-printing process. , wherein: the second underlying layer is composed of crystal grains substantially formed of at least one oxide selected from the group consisting of cobalt oxide, chromium oxide, iron oxide, nickel oxide, and magnesium oxide, and a crystal grain boundary containing at least one oxide selected from the group consisting of silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide,the first underlying layer serves as a layer to prevent the second underlying layer from initial growth,the first underlying layer is a crystalline film, and the crystalline film includes at least one selected from the group consisting of chromium, chromium alloy, vanadium, vanadium allow, and an alloy containing at least one element selected from the group consisting of titanium, tantalum, aluminum, nickel, vanadium, and zirconium.13. The magnetic recording medium comprising: a substrate; a first underlying layer which is formed on the substrate; a second underlying layer which is formed on the first underlying layer; and a magnetic layer which is formed on the second underlying layer and on which information is recorded, wherein: the second underlying layer is composed of crystal grains substantially formed of at least one oxide selected from the group consisting of cobalt oxide, chromium oxide, iron oxide, nickel oxide, and magnesium oxide, and a crystal grain boundary containing at least one oxide selected from the group consisting of silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide,the first underlying layer serves as a layer to prevent the second underlying layer from initial growth,the first underlying layer and the second underlying layer are formed by using an ECR sputtering method, andthe first underlying layer is formed of hafnium, and the second underlying layer is formed of CoO—SiO2.14. A magnetic recording medium comprising: a substrate; an underlying layer which is formed on the substrate; a control layer which is formed on the underlying layer and which is formed of at least one selected from the group consisting of magnesium oxide, chromium alloy, and nickel alloy; and a magnetic layer which is formed on the control layer and on which information is recorded, wherein: the underlying layer is composed of crystal grains substantially formed of at least one oxide selected from the group consisting of cobalt oxide, chromium oxide, iron oxide, nickel oxide, and magnesium oxide, and a crystal grain boundary containing at least one oxide selected from the group consisting of silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide.15. The magnetic recording medium according to claim 14, wherein the control layer is an alloy containing chromium or nickel as a major component, and at least one element selected from the group consisting of chromium, titanium, tantalum, vanadium, ruthenium, tungsten, molybdenum, niobium, nickel, zirconium, and aluminum.16. The magnetic recording medium according to claim 14, wherein the control layer is formed of one selected from the group consisting of chromium-titanium, chromium-tungsten, magnesium oxide, chromium-ruthenium.17. The magnetic recording medium according to claim 14, wherein the control layer has a bcc or B2 structure.18. The magnetic recording medium according to claim 14, wherein the control layer is epitaxially grown from the underlying layer, the control layer has a structure which reflects a crystal structure of the underlying layer, and the control layer has a crystalline portion which is constructed by crystal grains corresponding to the crystal grains of the underlying layer, and a grain boundary which corresponds to the crystal grain boundary of the underlying layer.19. The magnetic recording medium according to claim 14, wherein the control layer has a film thickness of 2 nm to 10 nm.20. The magnetic recording medium according to claim 14, wherein a combination of the underlying layer, th