IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
|
출원번호 |
US-0998956
(2001-11-15)
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발명자
/ 주소 |
- Yau, Wai-Fan
- Cheung, David
- Jeng, Shin-Puu
- Liu, Kuowei
- Yu, Yung-Cheng
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출원인 / 주소 |
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대리인 / 주소 |
Moser, Patterson & Seridan
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인용정보 |
피인용 횟수 :
30 인용 특허 :
136 |
초록
▼
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can a
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
대표청구항
▼
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can a
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O. ast one region of platinum-containing surface and the polishing surface; and planarizing the at least one region of platinum-containing surface; wherein the planarization composition comprises a halogen-containing compound and a halide salt, which are separately delivered; andwherein the halogen-containing compound is selected from the group consisting of a halogen; an interhalogen; a halogen-generating compound selected from the group consisting of XeF2, HgF2, SF4, alkyl halides, and combines of halogen with bases; and combinations thereof.18. The method of claim 17 wherein the platinum-containing surface of the substrate comprises platinum in elemental form.19. The method of claim 17 wherein the platinum is present in an amount of about 50 atomic percent or more.20. The method of claim 17 wherein the semiconductor substrate or substrate assembly is a silicon wafer.21. The method of claim 17 wherein the polishing surface comprises a polishing pad and the planarization composition comprises a plurality of abrasive particles.22. The method of claim 17 wherein the halogen-containing compound is selected from the group consisting of F2, Cl2, Br2, I2, ClBr, IBr, ICl, BrF, ClF, ClF3, BrF3, ClF5, IF5, IF7, XeF2, HgF2, SF4, alkyl halides, and complexes of halogen with organic bases, and combinations thereof.23. The method of claim 17 wherein the halide salt is an inorganic salt.24. The method of claim 23 wherein the inorganic halide salt is selected from the group consisting of NaI, KCl, KBr, NH4F and combinations thereof.25. The method of claim 17 wherein the halide salt is an organic salt.26. The method of claim 25 wherein the organic salt is selected from the group consisting of Et4NBr, Me3NHCl, Me4NF, and combinations thereof.27. The method of claim 17 wherein the halogen-containing compound is present in the planarization composition in an amount of at least about 0.1% by weight and the halide salt is present in the planarization composition in an amount of at least about 0.1% by weight.28. The method of claim 17, wherein the polishing surface comprises a fixed abrasive article.29. A planarization method comprising: positioning a metal-containing surface of a substrate to interface with a polishing surface, wherein the metal-containing surface comprises a metal selected from the group consisting of a Group VIIIB metal, a Group IB metal, and a combination thereof; supplying a planarization composition in proximity to the interface; and planarizing the substrate surface; wherein the planarization composition comprises:a halogen-containing compound selected from the group consisting of F2, Cl2, Br2, I2, ClBr, IBr, ICl, BrF, ClF, ClF3, BrF3, ClF5, IF5, IF7, XeF2, HgF2, SF4, alkyl halides, and complexes of halogen with organic bases, and combinations thereof; anda halide salt selected from the group consisting of NaI, KCl, KBr, NH4F, Et4NBr, Me3NHCl, Me4NF, and combinations thereof;wherein the halogen-containing compound and the halide salt are separately delivered.30. The method of claim 29 wherein the halogen-containing compound is present in the planarization composition in an amount of about 1% to about 10% by weight.31. The method of claim 29 wherein the halide salt is present in the planarization composition in an amount of about 1% to about 10% by weight.32. A planarization method comprising: providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface; providing a polishing surface; providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface; and planarizing the at least one region of platinum-containing surface; wherein the planarization composition comprises:a halogen-containing compound selected from the group consisting of F2, Cl2, Br2, I2, ClBr, IBr, ICl, BrF, ClF, ClF3, BrF3, ClF5, IF5, IF7, XeF2, HgF2, SF4, alkyl halides, and complexes of halogen with or
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