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In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layer

In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.

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In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layer

In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed. t least one semiconductor component comprises memory.9. The card of claim 1, wherein the card comprises a memory card for digitally recording and retrievably storing photographic data in a digital camera.10. A card comprising: a printed circuit substrate including: a circuit side having a peripheral portion;a back side having a peripheral portion;a peripheral substrate edge joining the back side to the circuit side;a plurality of conductors on the circuit side;a plurality of external contacts on the back side in electrical communication with said plurality of conductors;at least one semiconductor component on the circuit side in electrical communication with the plurality of conductors;a first plastic molded to the circuit side to encapsulate the at least one semiconductor component and leave the plurality of external contacts and the peripheral portion of the circuit side uncovered;a second plastic molded to the peripheral portion of the circuit side and extending laterally outwardly therefrom to form a periphery of the card; andat least one connecting segment exposed at one of the card periphery and an intermediate region of the card periphery.11. The card of claim 10, further comprising a notch in the card periphery to recess a portion of the exposed at least one connecting segment to a nonprotruding position.12. The card of claim 10, wherein the second plastic abuts the first plastic along an interface thereof.13. The card of claim 10, wherein the first plastic and the second plastic comprise a resin material.14. The card of claim 10, wherein the substrate comprises a reinforced organic polymer resin.15. The card of claim 10, wherein the back side of the substrate is substantially exposed.16. The card of claim 10, wherein the at least one semiconductor component comprises memory.17. The card of claim 10, wherein the card comprises a memory card for digitally recording and retrievably storing photographic data in a digital camera. 0000900, Solberg; US-6300679, 20011000, Mukerji et al.; US-6469377, 20021000, Kondo et al.; US-6486544, 20021100, Hashimoto; US-6590282, 20030700, Wang et al. ranged so as to overlap or face each other; and a current blocking layer using a PN connection is provided between a compound semiconductor element electrode formed on the upper surface of said Si block and said Si block. 12. A mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said base substance, wherein there is provided an Si block of a shape for engaging in said concavity on the upper surface of said base substance, and a compound semiconductor element formed on an upper surface of said Si block; wherein individual elements are formed on said Si block itself; said individual elements formed on said Si block itself and said compound semiconductor element are arranged so as to be displaced from each other; and a current blocking layer using a PN connection is provided between a compound semiconductor element electrode formed on the upper surface of said Si block and said Si block. 13. A mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said base substance, wherein there is provided an Si block of a shape for engaging in said concavity on the upper surface of said base substance, and a compound semiconductor element formed on an upper surface of said Si block; and wherein all of the electrodes for said compound semiconductor element are formed on the upper surface of said Si block; and a current blocking layer using a PN connection is provided between said compound semiconductor element electrode formed on the upper surface of said Si block and said Si block. 14. A mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said base substance, wherein there is provided an Si block of a shape for engaging in said concavity on the upper surface of said base substance, and a compound semiconductor element formed on an upper surface of said Si block; wherein any one of the electrodes for said compound semiconductor element is made common with the electrodes for said Si block; and a current blocking layer using a PN connection is provided between said compound semiconductor element electrode formed on the upper surface of said Si block and said Si block. 15. A mountable microstructure according to claim 14, wherein a high resistance layer with a resistance greater than 1×104&OHgr; is provided between said compound semiconductor element electrode and said Si block.16. A mountable microstructure according to claim 15, wherein said high resistance layer comprises a compound semiconductor.17. A mountable microstructure according to claim 15, wherein said high resistance layer comprises a compound semiconductor doped with Cr and O.18. A mountable microstructure according to claim 15, wherein said high resistance layer comprises an oxide.19. A mountable microstructure according to claim 15, wherein said high resistance layer comprises a nitride.20. A mountable microstructure according to claim 15, wherein said high resistance layer comprises a resin.21. A mountable microstructure according to claim 14, wherein said current blocking layer is formed by laminating layers of a P-type semiconductor and an N-type semiconductor in PNP or NPN order.22. A mountable microstructure according to claim 21, wherein a contact layer in the immediate vicinity of said Si block is used as the P-type semiconductor or the N-type semiconductor constituting said current blocking layer.23. An optical transmission apparatus comprising: a first base substance with a first mountable microstructure which is en gaged and mounted in a concavity formed at a predetermined location on an upper surface of the first base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said first base substance, wherein there is provided a Si block of a shape for engaging in said concavity on the upper surface of said first base substance, and a compound semiconductor element formed on an upper surface of said Si block, the first base substance including a light emitting element mounted in the concavity, and a second base substance with a second mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of the second base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said second base substance, wherein there is provided a Si block of a shape for engaging in said concavity on the upper surface of said second base substance, and a compound semiconductor element formed on an upper surface of said Si block, which includes the second base substance including a light receiving element mounted in the concavity, wherein the first base substance and the second base substance are laminated so that said light emitting element and said light receiving element face each other. 24. An optical transmission apparatus having a light emitting section comprising: a first base substance with a mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of the first base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said first base substance, wherein there is provided a Si block of a shape for engaging in said concavity on the upper surface of said first base substance, and a compound semiconductor element formed on an upper surface of said Si block, and a light emitting element mounted in the concavity, and a light receiving section comprising: a second base substance with a mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of the second base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said second base substance, wherein there is provided a Si block of a shape for engaging in said concavity on the upper surface of said second base substance, and a compound semiconductor element formed on an upper surface of said Si block, and a light receiving element mounted in the concavity wherein the first base substance and the second base substance are laminated so that said light emitting element and said light receiving element face each other.