IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0254810
(2002-09-25)
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발명자
/ 주소 |
- Boyd, John M.
- Lacy, Michael S.
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출원인 / 주소 |
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대리인 / 주소 |
Brinks Hofer Gilson & Lione
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인용정보 |
피인용 횟수 :
1 인용 특허 :
54 |
초록
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An apparatus enabling preparation and use of a fixed abrasive polishing member is described. The apparatus includes a patterned three-dimensional substrate, an abrasive coating a surface of the patterned substrate and a vacuum deposition chamber in which the abrasive is applied to the surface of the
An apparatus enabling preparation and use of a fixed abrasive polishing member is described. The apparatus includes a patterned three-dimensional substrate, an abrasive coating a surface of the patterned substrate and a vacuum deposition chamber in which the abrasive is applied to the surface of the substrate. In addition, rather than a fixed abrasive, non-abrasive material may be applied to the surface of the patterned substrate, in which case, a conventional slurry may be used in planarization of an applied semiconductor wafer.
대표청구항
▼
An apparatus enabling preparation and use of a fixed abrasive polishing member is described. The apparatus includes a patterned three-dimensional substrate, an abrasive coating a surface of the patterned substrate and a vacuum deposition chamber in which the abrasive is applied to the surface of the
An apparatus enabling preparation and use of a fixed abrasive polishing member is described. The apparatus includes a patterned three-dimensional substrate, an abrasive coating a surface of the patterned substrate and a vacuum deposition chamber in which the abrasive is applied to the surface of the substrate. In addition, rather than a fixed abrasive, non-abrasive material may be applied to the surface of the patterned substrate, in which case, a conventional slurry may be used in planarization of an applied semiconductor wafer. switching field, in absolute value, of at least 200 Oe over the operating temperature range, and a switching field, in absolute value, of at least 500 Oe at least at room temperature.12. The process of claim 11, wherein the film exhibits a switching field, in absolute value, of 500 Oe or higher over the operating temperature range.13. A process for forming an article, comprising the steps of: providing a substrate; and forming on the substrate a film of (BiEu) 3(Fe5−y(GaxAl1−x)y)O12, where x is 0 to 1 and y is 0.8 to 1.2, wherein the substrate is a single crystal material consisting essentially of a solid solution or gadolinium scandium gallium garnet and gadolinium scandium aluminum garnet, or a solid solution of gadolinium scandium gallium garnet and terbium scandium gallium garnet. 14. The process of claim 13, where x is 1.15. The process of claim 14, wherein the substrate lattice parameter is 12.53 to 12.555 Angstroms.16. The process of claim 15, wherein the substrate is of substantially uniform composition.17. The process of claim 13, wherein y is selected such that the film exhibits a saturation magnetization, in absolute value, less than 100 G at least at room temperature.18. The process of claim 13, further comprising the steps of: processing the film to form chips; and incorporating at least one chip into a device. 19. A process for forming an article, comprising the steps of: providing a substrate; and forming over the substrate a film of (BiEu) 3(Fe5−y(GaxAl1−x)y)O12, where x is 0 to 1 and y is 0.8 to 1.2, wherein y is selected so that the film exhibits a substantially rectangular magnetization loop, a saturation magnetization, in absolute value, less than 100 G, a switching field, in absolute value, higher than the saturation magnetization, in a magnetic field applied parallel to the normal to the major surface of the film, over an operating temperature range of −40° to +85° C., wherein the substrate is a single crystal material consisting essentially of a solid solution of gadolinium scandium gallium garnet and gadolinium scandium aluminum garnet, or a solid solution of gadolinium scandium gallium garnet and terbium scandium gallium garnet. 20. The process of claim 19, wherein the film exhibits a switching field, in absolute value, of at least 200 Oe over the operating temperature range, and switching field, in absolute value, of at least 500 Oe at least at room temperature.21. The process of claim 20, wherein the film exhibits a switching field, in absolute value, of 500 Oe or higher over the operating temperature range.
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