초록

A p-type ZnO film is formed on a sapphire substrate by RF magnetron sputtering in an atmosphere of a mixture of Ar and N2gases, using a Zn metal target doped with Y2O3. The p-type ZnO film can be easily formed even on a large-sized substrate.

대표청구항 ▼

1. A luminescent element comprising a substrate; a metallic layer; a p-type ZnO film; a n-type ZnO film; wherein the p-type ZnO film is doped with (a) a Group III element and (b) a Group V element.2. A luminescent element according to claim 1, wherein the content of the (a) element is in

1. A luminescent element comprising a substrate; a metallic layer; a p-type ZnO film; a n-type ZnO film; wherein the p-type ZnO film is doped with (a) a Group III element and (b) a Group V element.2. A luminescent element according to claim 1, wherein the content of the (a) element is in the range of about 1% to 16% by weight and the content of the (b) element is in the range of about 0.5% to 8% by weight.3. A luminescent element according to claim 2, wherein the Group III element is selected from the group consisting of Sc, Y, La, Ac, B, Al, Ga, In, Tl, lanthanides and actinides, and the Group V element is selected from the group consisting of N, V, Nb, Ta, P, As, Sb and Bi.4. A luminescent element according to claim 3, wherein the content of the Group III element is in the range of about 0.5% to 8% by weight and the content of the Group V element is in the range of about 1% to 16% by weight.5. A luminescent element according to claim 4, wherein the content of the Group V element is higher than the content of the Group III element.6. A luminescent element according to claim 5, wherein the Group V element is Y or Ga and the Group III element is N, Bi or As.7. A luminescent element according to claim 2, wherein the content of the Group V element is higher than the content of the Group III element.8. The luminescent element according to claim 1 wherein the element further comprises an electrode disposed on a surface of the n-type ZnO film distant from the p-type ZnO film and an electrode on a surface of the metallic layer adjacent the p-type ZnO film.9. The luminescent element according to claim 8 in which the substrate is a sapphire substrate and the n-type ZnO film is doped with Al.10. The luminescent element according to claim 1 in which the substrate is a sapphire substrate and the n-type ZnO film is doped with Al.11. The luminescent element according to claim 10, wherein the content of the Group V element is higher than the content of the Group III element.12. The luminescent element according to claim 10, wherein the content of the Group III element is in the range of about 0.5% to 8% by weight and the content of the Group V element is in the range of about 1% to 16% by weight.13. The luminescent element according to claim 11, wherein the content of the Group V element is higher than the content of the Group III element.14. The luminescent element according to claim 12, wherein the Group V element is Y or Ga and the Group III element is N, Bi or As.