초록 ▼

An anti-reflection coating5used at time of forming a first contact hole6is interposed between a first insulating layer4and a second insulating layer80, and the anti-reflection coating5is served as an etching prevention film for the first insulating layer4at time of forming a second contact hole9in t

An anti-reflection coating5used at time of forming a first contact hole6is interposed between a first insulating layer4and a second insulating layer80, and the anti-reflection coating5is served as an etching prevention film for the first insulating layer4at time of forming a second contact hole9in the second insulating layer80, whereby an electrical short between a conductive plug and an electrode layer is prevented; an electrical connection between upper and lower conductive plugs is stabilized; and a semiconductor device having a highly reliable contact structure, in which multi-layer conductive plugs are included, is obtainable.

대표청구항 ▼

1. The semiconductor device comprising: an electrode layer formed on a part of a semiconductor layer; a first insulating layer formed by covering said semiconductor layer and said electrode layer and by sequentially laminating a first insulating film and a first anti-reflection coating; a fi

1. The semiconductor device comprising: an electrode layer formed on a part of a semiconductor layer; a first insulating layer formed by covering said semiconductor layer and said electrode layer and by sequentially laminating a first insulating film and a first anti-reflection coating; a first contact hole formed in said first insulating layer and reaching said semiconductor layer by penetrating a vicinity of a side of said electrode layer from a surface of said first insulating layer; a first conductive plug embedded in said first contact hole and electrically connected to said semiconductor layer; a first wiring layer electrically connected to said semiconductor layer through said first conductive plug and formed on said first conductive plug; a second insulating layer formed by covering said first insulating layer and said first wiring layer; a second contact hole formed in said second insulating layer and reaching said first wiring layer and said first insulating layer from a surface of said second insulating layer; a second conductive plug embedded in said second contact hole and electrically connected to said first wiring layer; and a second wiring layer electrically connected to said first wiring layer through said second conductive plug and formed on said second conductive plug. 2. The semiconductor device according to claim 1, wherein said second insulating layer includes a second insulating film and a second anti-reflection coating formed on said second insulating film.3. The semiconductor device according to claim 2, wherein said first anti-reflection coating and said second anti-reflection coating are a silicon oxynitride film.4. The semiconductor device according to claim 1, wherein said first anti-reflection coating and said second anti-reflection coating are a silicon oxynitride film.