초록 ▼

Apparatus for generating electrical energy from a flowing medium of wind or water in which a rotary structure is supported for rotation in response to the flower medium and has an open frame with a plurality of panels pivotably mounted at end edeges therefore for movement between open and closed pos

Apparatus for generating electrical energy from a flowing medium of wind or water in which a rotary structure is supported for rotation in response to the flower medium and has an open frame with a plurality of panels pivotably mounted at end edeges therefore for movement between open and closed positions such that when the panels are in closed position they are subject to the force of the flowing medium and will produce a rotational force to generate electrical energy. After rotating 180° the panels are opened so that the frame freely rotates to its initial position. The panels are pivotably moved in synchronism by oscillating stops and a panel aligning wire.

대표청구항 ▼

Apparatus for generating electrical energy from a flowing medium of wind or water in which a rotary structure is supported for rotation in response to the flower medium and has an open frame with a plurality of panels pivotably mounted at end edeges therefore for movement between open and closed pos

Apparatus for generating electrical energy from a flowing medium of wind or water in which a rotary structure is supported for rotation in response to the flower medium and has an open frame with a plurality of panels pivotably mounted at end edeges therefore for movement between open and closed positions such that when the panels are in closed position they are subject to the force of the flowing medium and will produce a rotational force to generate electrical energy. After rotating 180° the panels are opened so that the frame freely rotates to its initial position. The panels are pivotably moved in synchronism by oscillating stops and a panel aligning wire. point metal layer so that said electrode terminal or wiring of the first semiconductor chip is face to face with said electrode terminal and wiring, or a coupling wirings of the first and second semiconductor chips are face to face to each other. 9. The semiconductor device according to claim 8, said first and second semiconductor chips are joined to each other with a couple of wirings, and said low-melting point metal layer is provided on a portion of at least one of said couple of the wirings on which said first and second semiconductor chips are joined, further comprising: a first insulating layer provided as interposed at a gap between said a couple of wirings except at said portion. 10. The semiconductor device according to claim 8, further comprising: an insulating layer provided between said wiring and a passivation film on the surface of said semiconductor chip to flatten the surface of said wiring. 11. The semiconductor device according to claim 8, wherein said wiring is made of an Au, which is provided so as to connect to said electrode terminal via a barrier metal layer, and wherein said low-melting point metal layer is made of an Au—Sn alloy. 12. The semiconductor device according to claim 8, wherein said wiring comprising: a Cu wiring made of Cu formed simultaneously with said electrode terminal; a barrier metal layer provided on said Cu wiring; and an Au wiring provided on said barrier metal layer, wherein said low-melting point metal layer is made of