IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0981508
(2001-10-16)
|
발명자
/ 주소 |
- Zheng, Bo
- He, Renren
- Dixit, Girish
|
출원인 / 주소 |
|
대리인 / 주소 |
Moser, Patterson & Sheridan
|
인용정보 |
피인용 횟수 :
7 인용 특허 :
62 |
초록
▼
A method and apparatus for electrochemically depositing a metal onto a substrate. The apparatus generally includes a head assembly having a cathode and a wafer holder disposed above the cathode. The apparatus further includes a process kit disposed below the head assembly, the process kit including
A method and apparatus for electrochemically depositing a metal onto a substrate. The apparatus generally includes a head assembly having a cathode and a wafer holder disposed above the cathode. The apparatus further includes a process kit disposed below the head assembly, the process kit including an electrolyte container configured to receive and maintain a fluid electrolyte therein, and an anode disposed in the electrolyte container. The apparatus further includes a power supply in electrical communication with the cathode and the anode, the power supply being configured to provide a varying amplitude electrical signal to the anode and cathode. The method generally includes providing an electrolyte container configured to receive and maintain a fluid electrolyte therein, the electrolyte container having an anode disposed within the electrolyte container, providing a head assembly positioned above the electrolyte container, the head assembly including a wafer holder for supporting a wafer and a cathode, and positioning a wafer in the electrolyte container in contact with the fluid electrolyte, and applying a varying amplitude waveform to the cathode and anode in an electroplating process.
대표청구항
▼
1. A method for electroplating metal into sub-quarter micron integrated circuit features, comprising: providing an electrolyte container configured to receive and maintain a fluid electrolyte therein, the electrolyte container having an anode disposed within the electrolyte container; providing
1. A method for electroplating metal into sub-quarter micron integrated circuit features, comprising: providing an electrolyte container configured to receive and maintain a fluid electrolyte therein, the electrolyte container having an anode disposed within the electrolyte container; providing a head assembly positioned above the electrolyte container, the head assembly including a wafer holder for supporting a wafer and a cathode; positioning a wafer in the electrolyte container in contact with the fluid electrolyte; and applying a varying amplitude waveform to the cathode and anode in an electroplating process, the varying amplitude waveform comprising a small magnitude voltage pulse and a large magnitude voltage pulse, the large magnitude voltage pulse generating a current density to the cathode of between about 8 milliamps per square centimeter and about 50 milliamps per square centimeter. 2. The method of claim 1, wherein applying the cyclical waveform further comprises applying the cyclical waveform between about 5 cycles per second and about 50 cycles per second.3. The method of claim 1, wherein the varying amplitude waveform further comprises at least one of a square voltage waveform, a saw tooth voltage-waveform, a triangular voltage waveform, and a sinusoidal voltage waveform.4. The method of claim 1, wherein the large magnitude voltage pulses have a voltage of between about 2 volts to about 15 volts.5. The method of claim 1, wherein the large magnitude voltage pulses have a voltage of between about 5 volts to about 10 volts.6. The method of claim 1, wherein the small magnitude voltage pulses have a voltage of between about 0 volts to about 2 volts.7. The method of claim 1, wherein the small magnitude voltage pulses have a voltage of between about 0.3 volts to about 1.5 volts.8. The method of claim 1, wherein the small magnitude voltage pulses have a voltage of between about negative 0.1 volts to about negative 2 volts.9. The method of claim 1, wherein the large magnitude voltage pulses are configured to supply a current density to the cathode of between about 16 milliamps per square centimeter and about 32 milliamps per square centimeter.10. The method of claim 1, wherein the large magnitude voltage pulses have a duration of between about 50 milliseconds and about 500 milliseconds.11. The method of claim 1, wherein the small magnitude voltage pulses have a duration of between about 50 milliseconds and about 500 milliseconds.12. A method for electroplating metal, comprising: providing an electrolyte having an anode disposed therein; providing a cathode in electrical communication with a wafer to be plated; and applying a varying amplitude voltage waveform to the cathode and anode in a plating process, the varying amplitude waveform comprising a series of alternating large magnitude voltage pulses and small magnitude voltage pulses, the large magnitude voltage pulses being configured to generate a current density on the wafer of between about 8 mA/cm 2and about 50 8 mA/cm2.13. The method of claim 12, wherein applying the cyclical waveform further comprises applying the cyclical waveform between about 5 cycles per second and about 50 cycles per second.14. The method of claim 12, wherein the varying amplitude waveform further comprises at least one of a square voltage waveform, a saw tooth voltage waveform, a triangular voltage waveform, and a sinusoidal voltage waveform.15. The method of claim 12, wherein the large magnitude voltage pulses have a voltage of between about 2 volts to about 15 volts.16. The method of claim 12, wherein the large magnitude voltage pulses have a voltage of between about 5 volts to about 10 volts.17. The method of claim 12, wherein the small magnitude voltage pulses have a voltage of between about 0 volts to about 2 volts.18. The method of claim 12, wherein the small magnitude voltage pulses have a voltage of between about 0.3 volts to about 1.5 volts.19. The method of c laim 12, wherein the small magnitude voltage pulses have a voltage of between about negative 0.1 volts to about negative 2 volts.20. The method of claim 12, wherein the large magnitude voltage pulses are configured to supply a current density to the cathode of between about 8 milliamps per cubic centimeter and about 50 milliamps per cubic centimeter.21. The method of claim 12, wherein the large magnitude voltage pulses are configured to supply a current density to the cathode of between about 16 milliamps per cubic centimeter and about 32 milliamps per cubic centimeter.22. The method of claim 12, wherein the large magnitude voltage pulses have a duration of between about 50 milliseconds and about 500 milliseconds.23. The method of claim 12, wherein the small magnitude voltage pulses have a duration of between about 50 milliseconds and about 500 milliseconds.24. A method for electroplating a conductive material onto a substrate, comprising: positioning the substrate in an electroplating cell, the electroplating cell comprising an anode positioned in electrical communication with a plating solution; electrically contacting a plating surface of the substrate with a cathode electrode; immersing the plating surface in the plating solution; and applying a plating bias between the anode and the cathode, the plating bias comprising an interchanging cathodic series of large magnitude and small magnitude pulses, the large magnitude pulses generating a current density of between about 8 mA/cm 2and about 50 mA/cm2across the plating surface.25. The method of claim 24, wherein the large magnitude pulses and the small magnitude pulses comprise a duration of between about 50 ms and about 500 ms per pulse.26. The method of claim 24, wherein the current density further comprises between about 16 mA/cm2and about 32 mA/cm2.27. The method of claim 24, wherein the small magnitude-voltage pulses have a voltage of between about 0.3 volts to about 1.5 volts.28. The method of claim 24, wherein the large magnitude voltage pulses have a voltage of between about 5 volts and about 10 volts.
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