초록 ▼

A circuit assembly comprises a substrate comprising one or more conductors. An integral frame of frame elements supports the substrate. The frame elements spaced apart to expose intervening regions of the substrate between adjacent frame elements. A dielectric layer overlies the intervening regions,

A circuit assembly comprises a substrate comprising one or more conductors. An integral frame of frame elements supports the substrate. The frame elements spaced apart to expose intervening regions of the substrate between adjacent frame elements. A dielectric layer overlies the intervening regions, as a protective barrier for at least one of the conductors, a component, and a circuit feature of the substrate.

대표청구항 ▼

1. A method for making a circuit assembly, the method comprising: providing a substrate comprising one or more conductors and a circuit feature; forming an integral frame of frame elements about the substrate to provide structural support for the substrate, the frame elements spaced apart to ex

1. A method for making a circuit assembly, the method comprising: providing a substrate comprising one or more conductors and a circuit feature; forming an integral frame of frame elements about the substrate to provide structural support for the substrate, the frame elements spaced apart to expose intervening regions of the substrate between adjacent frame elements, wherein the one or more conductors and the circuit feature are positioned on the exposed intervening regions; and constructing a dielectric layer, over the intervening regions, as a protective barrier for at least one of the conductors and the circuit feature of the substrate, wherein the dielectric layer does not substantially extend exteriorly of the frame elements. 2. The method according to claim 1 wherein the providing comprises: providing a lead frame as the substrate, the lead frame arranged to support a semiconductor device. 3. The method according to claim 1 wherein the forming comprises: molding the integral frame as a lattice structure. 4. The method according to claim 1 wherein the forming comprises: molding the integral frame composed of at least one of a polymer and rigid a plastic material. 5. The method according to claim 1 wherein the constructing comprises: forming the dielectric layer of a dielectric thickness that is thinner than a frame thickness of the frame. 6. The method according to claim 1 wherein the constructing comprises: forming the dielectric layer composed of at least one of flexible polymer and an elastomer. 7. The method according to claim 1 wherein providing the substrate comprises providing a flexible substrate that permits flexing of the substrate from a generally planar shape upon exposure to mechanical stress from a conventional molding process.8. The method according to claim 1 wherein the forming comprises molding a portion of the frame as a rigid structure along at least an edge of the substrate.9. The method according to claim 1 wherein the forming comprises molding a web having a group of ribs as frame elements for holding the substrate in place.10. The method according to claim 1 wherein the providing comprises providing a substrate having at least two alignment members for aligning mold sections with respect to the substrate for formation of the frame in a defined orientation with respect to the substrate.11. The method according to claim 1, wherein no dielectric layer is formed upon the frame.12. The method according to claim 1, further comprising forming a second integral frame of frame elements about a side of the substrate that is opposite to a side of the substrate that includes the integral frame, the frame elements of the second integral frame spaced apart to expose a second set of intervening regions of the substrate between adjacent frame elements of the second integral frame, wherein a second set of one or more conductors and a circuit feature of the substrate are positioned on the exposed second set of intervening regions; and constructing a second dielectric layer, over the second set of intervening regions, as a protective barrier for at least one of the second set of one or more conductors and the circuit feature of the substrate. 13. The method according to claim 12, wherein the second dielectric layer does not substantially extend exteriorly of the frame elements of the second integral frame.