초록 ▼

Photoresist additives for preventing the acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area, photoresist compositions containing the same, and a process for forming a photoresist pattern using the same. Photoresist composition

Photoresist additives for preventing the acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area, photoresist compositions containing the same, and a process for forming a photoresist pattern using the same. Photoresist compositions comprising the disclosed additive can prevent acid diffusion effectively even if the additive is used in low concentrations, thereby improving LER, resulting in excellent profiles and lowering optimum irradiation energies.wherein, R 1 , R 2 , R 3 , R 4 and k are as defined herein.

대표청구항 ▼

1. A photoresist composition comprising a photoresist additive for preventing acid diffusion, wherein the additive is represented by Formula 1:wherein, R 1 , R 2 , R 3 and R 4 are individually selected from the group consisting of H, linear C 1 -C 10 alkyl and branched C 1 -C 10 alkyl, and k

1. A photoresist composition comprising a photoresist additive for preventing acid diffusion, wherein the additive is represented by Formula 1:wherein, R 1 , R 2 , R 3 and R 4 are individually selected from the group consisting of H, linear C 1 -C 10 alkyl and branched C 1 -C 10 alkyl, and k is 1. 2. The composition according to claim 1, wherein the additive is selected from the group consisting of N,N,N′,N′-tetramethyl-1,8-diaminofluorene and N,N′-dimethyl-1,8-diaminofluorene. 3. A photoresist composition comprising the additive of claim 1, a base resin, a photoacid generator and an organic solvent. 4. The photoresist composition according to claim 3, wherein the additive is present in an amount ranging from about 0.5 to about 20% by weight of the photoacid generator.