초록 ▼

An improved insitu hard mask open strategy is performed before carrying out a metal etching process. The method for opening the hard mask made of SiO 2 , Si 3 N 4 or SiON includes providing a substrate having thereon at least one metal layer, the hard mask layer, and a patterned photoresist layer

An improved insitu hard mask open strategy is performed before carrying out a metal etching process. The method for opening the hard mask made of SiO 2 , Si 3 N 4 or SiON includes providing a substrate having thereon at least one metal layer, the hard mask layer, and a patterned photoresist layer overlying the hard mask layer. The hard mask layer is etched in a plasma etching process using an etchant source gas which is formed of a fluorine containing gas and oxygen. The plasma processing chamber used for etching the hard mask layer is the same as the plasma processing chamber in which the at least one metal layer is etched in another plasma etching process after the hard mask layer has been etched.

대표청구항 ▼

1. A method for etching a hard mask layer containing a material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride, and etching at least one metal layer containing aluminum, which comprises the steps of:providing a substrate having thereon the metal layer, th

1. A method for etching a hard mask layer containing a material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride, and etching at least one metal layer containing aluminum, which comprises the steps of:providing a substrate having thereon the metal layer, the hard mask layer, and a patterned photoresist layer overlying the hard mask layer in a plasma processing chamber;etching the hard mask layer using a plasma etching process using an etchant source gas formed of a fluorine containing gas and oxygen, a flow rate of the oxygen being 5 to 10% based on a flow rate of the fluorine containing gas;etching the metal layer in the plasma processing chamber after the hard mask layer has been etched;performing a plasma clean step to clean walls of the plasma processing chamber using an a cleaning gas formed of one of an inert gas and oxygen, after the metal layer has been etched; andsubsequently removing the patterned photoresist layer from the hard mask layer. 2. The method according to claim 1, which further comprises forming the flourine containing gas from one of CF 4 and CHF 3 . 3. The method according to claim 1, which further comprises additionally providing the etchant source gas with argon. 4. The method according to claim 1, which further comprises performing the step of etching the metal layer in the plasma processing chamber in another subsequent plasma etching process using a different composition of etching gases. 5. The method according to claim 1, which further comprises performing the step of etching the hard mask layer by etching the hard mask layer with respect to the patterned photoresist layer.