초록 ▼

A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of ( 111 ) axis. A method for preparing t

A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of ( 111 ) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

대표청구항 ▼

1. A semiconductor device comprising:a crystalline semiconductor film comprising silicon provided over a substrate and containing a crystallization-promoting element,wherein the crystal growth face is the face ( 111 ). 2. The device of claim 1 wherein the crystallization-promoting element comprises

1. A semiconductor device comprising:a crystalline semiconductor film comprising silicon provided over a substrate and containing a crystallization-promoting element,wherein the crystal growth face is the face ( 111 ). 2. The device of claim 1 wherein the crystallization-promoting element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb. 3. The device of claim 1 wherein the crystallization-promoting element comprises one or more elements selected from the group consisting of Group VIII, Group IIIb, Group IVb and Group Vb elements. 4. The device of claim 1 wherein concentration of the crystallization-promoting element is 1×10 16 atoms/cm 3 to 1×10 19 atoms/cm 3 . 5. A semiconductor device comprising:a crystalline semiconductor film comprising silicon provided over a substrate and containing a crystallization-promoting element,wherein ( 111 ) orientation ratio of the semiconductor films is 0.33 to 1. 6. The device of claim 5 wherein the crystallization-promoting element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb. 7. The device of claim 5 wherein the crystallization-promoting element comprises one or more elements selected from the group consisting of Group VIII, Group IIIb, Group IVb and Group Vb elements. 8. The device of claim 5 wherein concentration of the crystallization-promoting element is 1×10 16 atoms/cm 3 to 1×10 19 atoms/cm 3 . 9. A semiconductor device comprising:a crystalline semiconductor film comprising silicon provided over a substrate and containing a crystallization-promoting element,wherein ( 111 ) orientation ratio of the semiconductor film is 0.67 to 1. 10. The device of claim 9 wherein the crystallization-promoting element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb. 11. The device of claim 9 wherein the crystallization-promoting element comprises one or more elements selected from the group consisting of Group VIII, Group IIIb, Group IVb and Group Vb elements. 12. The device of claim 9 wherein concentration of the crystallization-promoting element is 1×10 16 atoms/cm 3 to 1×10 19 atoms/cm 3 .