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Wire bonding to dual metal covered pad surfaces 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05K-001/16
출원번호 US-0017338 (1998-02-02)
발명자 / 주소
  • Cutting, Lawrence Richard
  • Gaudiello, John Gerard
  • Matienzo, Luis Jesus
  • Murdeshwar, Nikhil Mohan
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Pivnichny John R.
인용정보 피인용 횟수 : 26  인용 특허 : 3

초록

Wire bonds are made to palladium coated bonded pads on organic dielectric substrates at temperatures below 200° C. A layer of palladium thicker than 14 micro-inches is covered with a thin flash of gold. Palladium coated over copper pads is protected from copper diffusion by a thin nickel layer

대표청구항

1. An electrical card structure, comprising:a circuitized substrate having at least one wire bond pad located thereon;a layer of a first metal substantially free of hydrogen molecules located on said wire bond pad; anda thin layer of a second metal, different from said first metal, on said layer of

이 특허에 인용된 특허 (3)

  1. Lam Ken (Colorado Springs CO), Bumpless bonding process having multilayer metallization.
  2. Kasahara Tomokazu (Tokyo JPX), Method of fabricating a semiconductor device having an Au electrode.
  3. Zheng Long-ru (Webster NY), Shallow ohmic contacts to N-GaAs.

이 특허를 인용한 특허 (26)

  1. Sun, Weimin; Zampardi, Jr., Peter J.; Shao, Hongxiao, Apparatus and methods for reducing impact of high RF loss plating.
  2. Sun, Weimin; Zampardi, Jr., Peter J.; Shao, Hongxiao, Apparatus and methods for reducing impact of high RF loss plating.
  3. Kobayashi, Takeshi; Sugoh, Hisao, Lead frame, method of manufacturing the same, semiconductor device using lead frame and method of manufacturing semiconductor device.
  4. Hess, Kevin J.; Lee, Chu-Chung, Localized alloying for improved bond reliability.
  5. Hess, Kevin J.; Lee, Chu-Chung, Localized alloying for improved bond reliability.
  6. Sun, Weimin; Zampardi, Jr., Peter J.; Shao, Hongxiao, Methods to fabricate a radio frequency integrated circuit.
  7. Ko, Tin Myint; Lehtola, Philip John; Ozalas, Matthew Thomas; Ripley, David Steven; Shao, Hongxiao; Zampardi, Jr., Peter J., Power amplifier modules including bipolar transistor with grading and related systems, devices, and methods.
  8. Ko, Tin Myint; Lehtola, Philip John; Ozalas, Matthew Thomas; Ripley, David Steven; Shao, Hongxiao; Zampardi, Jr., Peter J., Power amplifier modules including bipolar transistor with grading and related systems, devices, and methods.
  9. Chen, Howard E.; Guo, Yifan; Hoang, Dinhphuoc Vu; Janani, Mehran; Ko, Tin Myint; Lehtola, Philip John; LoBianco, Anthony James; Modi, Hardik Bhupendra; Nguyen, Hoang Mong; Ozalas, Matthew Thomas; Petty-Weeks, Sandra Louise; Read, Matthew Sean; Riege, Jens Albrecht; Ripley, David Steven; Shao, Hongxiao; Shen, Hong; Sun, Weimin; Sun, Hsiang-Chih; Welch, Patrick Lawrence; Zampardi, Jr., Peter J.; Zhang, Guohao, Power amplifier modules including related systems, devices, and methods.
  10. Zampardi, Jr., Peter J.; Sun, Hsiang-Chih; Shen, Hong; Janani, Mehran; Riege, Jens Albrecht, Power amplifier modules including tantalum nitride terminated through wafer via and related systems, devices, and methods.
  11. Modi, Hardik Bhupendra; Petty-Weeks, Sandra Louise; Shao, Hongxiao; Sun, Weimin; Zampardi, Jr., Peter J.; Zhang, Guohao, Power amplifier modules including wire bond pad and related systems, devices, and methods.
  12. Hoang, Dinhphuoc Vu; Modi, Hardik Bhupendra; Sun, Hsiang-Chih; Zampardi, Jr., Peter J.; Zhang, Guohao, Power amplifier modules with bifet and harmonic termination and related systems, devices, and methods.
  13. Modi, Hardik Bhupendra; Petty-Weeks, Sandra Louise; Shao, Hongxiao; Sun, Weimin; Zampardi, Jr., Peter J.; Zhang, Guohao, Power amplifier modules with bonding pads and related systems, devices, and methods.
  14. Sun, Weimin; Zampardi, Jr., Peter J.; Shao, Hongxiao; Zhang, Guohao; Modi, Hardik Bhupendra; Hoang, Dinhphuoc Vu, Power amplifier modules with harmonic termination circuit and related systems, devices, and methods.
  15. Zampardi, Jr., Peter J.; Sun, Hsiang-Chih; Petty-Weeks, Sandra Louise; Zhang, Guohao; Modi, Hardik Bhupendra, Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods.
  16. Sun, Weimin; Zampardi, Jr., Peter J.; Shao, Hongxiao, Radio frequency integrated circuit module.
  17. Agness, John R.; Gu, Mingying, Semiconductor die including a current routing line having non-metallic slots.
  18. Agness, John R.; Gu, Mingying, Semiconductor die including a current routing line having non-metallic slots.
  19. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  20. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  21. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  22. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  23. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  24. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  25. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  26. Sun, Weimin; Zampardi, Peter J.; Shao, Hongxiao, Wire bond pad system and method.
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