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A method for fabricating an electron tunneling device on a substrate includes forming a first non-insulating layer on the substrate and providing a first amorphous layer. The method further includes the steps of providing a second layer, and forming a second non-insulating layer and providing an ant

A method for fabricating an electron tunneling device on a substrate includes forming a first non-insulating layer on the substrate and providing a first amorphous layer. The method further includes the steps of providing a second layer, and forming a second non-insulating layer and providing an antenna structure connected with the first and second non-insulating layers. The second layer of material is configured to cooperate with the first amorphous layer such that the first amorphous layer and the second layer of material together serve as a transport of electrons between and to the first and second non-insulating layers, and the transport of electrons includes, at least in part, transport by means of tunneling.

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1. A method for fabricating an electron tunneling device on a substrate, said method comprising:a) forming a first non-insulating layer on the substrate and configuring said first non-insulating layer to have a predetermined shape;b) providing a first amorphous layer;c) providing a second layer;d) f

1. A method for fabricating an electron tunneling device on a substrate, said method comprising:a) forming a first non-insulating layer on the substrate and configuring said first non-insulating layer to have a predetermined shape;b) providing a first amorphous layer;c) providing a second layer;d) forming a second non-insulating layer; ande) providing an antenna structure connected with said first and second non-insulating layers, wherein said second layer of material is configured to cooperate with said first amorphous layer such that the first amorphous layer and the second layer of material together serve as a transport of electrons between and to the first and second non-insulating layers, and wherein said transport of electrons includes, at least in part, transport by means of tunneling. 2. The method of claim 1 wherein said configuring said first non-insulating layer to have said predetermined shape includes defining said predetermined shape by lithography. 3. The method of claim 2 wherein said forming said first non-insulating layer further includes:i) depositing a bond layer of a first non-insulating material;ii) depositing a contact layer of a different, second non-insulating material; andiii) lifting off of excess first and second non-insulating materials, wherein said first non-insulating material is selected such that the second non-insulating material more readily adheres to the bond layer than directly to the substrate. 4. The method of claim 1 wherein said providing said first amorphous layer includes forming said first amorphous layer using a material selected from the group consisting of silicon dioxide, niobium oxide, titanium oxide, aluminum oxide, zirconium oxide, tantalum oxide, hafnium oxide, yttrium oxide, magnesium oxide, silicon nitride and aluminum nitride. 5. The method of claim 1 wherein said providing said first amorphous layer includes oxidizing the first non-insulating layer such that an oxide layer is integrally formed in the first non-insulating layer, wherein said oxide layer serves as said first amorphous layer. 6. The method of claim 1 wherein said providing said first amorphous layer includes depositing said first amorphous layer by atomic layer deposition. 7. The method of claim 1 wherein said providing said first amorphous layer includes depositing said first amorphous layer by sputtering. 8. The method of claim 1 wherein said providing said first amorphous layer includes depositing said first amorphous layer by spin-on deposition. 9. The method of claim 1 wherein said providing said second layer includes depositing said second layer by atomic layer deposition. 10. The method of claim 1 wherein said providing said second layer includes depositing said second layer by sputtering. 11. The method of claim 1 wherein said providing said second layer includes depositing said second layer by spin-on deposition. 12. The method of claim 1 wherein said providing said antenna structure includes configuring said first and second non-insulating layers to integrally form said antenna structure.