초록 ▼

A plasma assisted cryogenic cleaner for and a method of performing cleaning of a surface that must be substantially free of contaminants has a resiliently mounted nozzle for spraying a cryogenic cleaning medium on the surface. The cleaning is conducted by applying to the substrate surface a mixture

A plasma assisted cryogenic cleaner for and a method of performing cleaning of a surface that must be substantially free of contaminants has a resiliently mounted nozzle for spraying a cryogenic cleaning medium on the surface. The cleaning is conducted by applying to the substrate surface a mixture of gases selected from the group consisting of oxygen, nitrogen, hydrogen, fluorine, hydrofluorocarbon or a mixture of such gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water and/or have a weakened bonds that they can be removed with a stream of cryogenic medium. The cryogenic and plasma processes can be performed sequentially or simultaneously. In certain embodiments, the cryogenic cleaning medium nozzle is driven in an oscillatory or vibratory manner so the nozzle spray is delivered in a manner to provide pulsing of the spray and to provide as “snow plow” effect on contaminants as the spray delivers the cleaning medium against the surface. The surface may be transported past the nozzle, and the cleaning may occur in an enclosed controlled environment.

대표청구항 ▼

1. A method for manufacturing an article, the article having a resist layer to be removed during the manufacture of the article, comprising the steps of:generating free radicals from one or more reactant gases remote from a processing chamber containing the article;introducing the free radicals into

1. A method for manufacturing an article, the article having a resist layer to be removed during the manufacture of the article, comprising the steps of:generating free radicals from one or more reactant gases remote from a processing chamber containing the article;introducing the free radicals into the processing chamber, wherein the free radicals react with the resist layer; andsupplying a cryogenic cleaning medium into the processing chamber, wherein the cryogenic cleaning medium removes residue present after the free radicals react with the resist layer;wherein the reactant gases are selected to result in residue from the reaction with the resist layer having weakened bonds, wherein the residue is removed with the cryogenic cleaning medium;wherein the resist layer is removed from the article. 2. The method of claim 1, further comprising the steps of:applying RF energy to one or more electrodes in the processing chamber;generating an RF plasma, wherein the RF plasma is generated from the reactant gases and/or from the free radicals, wherein the RF plasma reacts with resist layer;wherein the step of supplying a cryogenic cleaning medium operates to remove residue present after the RF plasma reacts with the resist layer. 3. The method of claim 1, wherein one or more of the introducing and supplying steps are repeated a plurality of times. 4. The method of claim 3, wherein at least one of the introducing steps is performed after a predetermined supplying step, wherein the free radicals react with residue present after the predetermined supplying step. 5. The method of claim 1, wherein the cryogenic cleaning medium is supplied in an oscillatory or vibratory manner. 6. A method for manufacturing an article, the article having a resist layer to be removed during the manufacture of the article, comprising the steps of:applying RF energy to one or more electrodes in a processing chamber containing the article;generating an RF plasma, wherein the RF plasma is generated based on one or more reactant gases, wherein the RF plasma reacts with the resist layer;supplying a cryogenic cleaning medium into the processing chamber, wherein the cryogenic cleaning medium operates to remove residue present after the RF plasma reacts with the resist laser;wherein the reactant gases are selected to result in residue from the reaction with the resist layer having weakened bonds, wherein the residue is removed with the cryogenic cleaning medium;wherein the resist layer is removed from the article. 7. The method of claim 6, further comprising the steps ofgenerating free radicals from the one or more reactant gases remote from the processing chamber;introducing the free radicals into the processing chamber, wherein the free radicals react with the resist layer; andwherein the step of supplying a cryogenic cleaning medium operates to remove residue present after the free radicals react with the resist layer. 8. The method of claim 6, wherein one or more of the generating and supplying steps are repeated a plurality of times. 9. The method of claim 8, wherein at least one of the generating steps is performed after a predetermined supplying step, wherein the RF plasma react with residue present after the predetermined supplying step. 10. The method of claim 6, wherein the cryogenic cleaning medium is supplied in an oscillatory or vibratory manner. 11. The method of claim 1, wherein the reactant gases are selected to result in removal of the residue with the cryogenic cleaning medium. 12. The method of claim 1, wherein the reactant gases comprise gases selected from the group consisting of oxygen, nitrogen, hydrogen, fluorine, and hydrofluoro carbon. 13. The method of claim 12, wherein the reactant gases are selected to result in residue from the reaction with the resist layer having weekend bonds, wherein th residue is removed with the cryogenic cleaning medium. 14. The method of claim 12, wherein the reactant gases are selected to result in removal of t he residue with the cryogenic cleaning medium. 15. The method of claim 1, wherein the reactant gases comprise gases selected from the group consisting of O2, N2, H2, CF4 and NF3. 16. The method of claim 15, wherein the reactant gases are selected to result in residue from the reaction with the resist layer having weekend bonds, wherein the residue is removed with the cryogenic cleaning medium. 17. The method of claim 15, wherein the reactant gases are selected to result in removal of the residue with the cryogenic cleaning medium. 18. The method of claim 6, wherein the reactant gases are selected to result in removal of the residue with the cryogenic cleaning medium. 19. The method of claim 6, wherein the reactant gases comprise gases selected from the group consisting of oxygen, nitrogen, hydrogen, fluorine, and hydrofluoro carbon. 20. The method of claim 19, wherein the reactant gases are selected to result in residue from the reaction with the resist layer having weekend bonds, wherein the residue is removed with the cryogenic cleaning medium. 21. The method of claim 19, wherein the reactant gases are selected to result in removal of the residue with the cryogenic cleaning medium. 22. The method of claim 6, wherein the reactant gases comprise selected from the group consisting of O2, N2, H2, CF 4 and NF3. 23. The method of claim 22, wherein the reactant gases are selected to result in residue from the reaction with the resist layer having weekend bonds, wherein the residue is removed with the cryogenic cleaning medium. 24. The method of claim 22 wherein the reactant gases are selected to result in removal of the residue with the cryogenic cleaning medium.