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Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23F-001/00
  • H01L-021/306
  • C23C-016/00
출원번호 US-0075967 (2002-02-14)
발명자 / 주소
  • Sun, Jennifer Y
  • Wu, Shun Jackson
  • Thach, Senh
  • Kumar, Ananda H
  • Wu, Robert W
  • Wang, Hong
  • Lin, Yixing
  • Stow, Clifford C
대리인 / 주소
    Church Shirley L.
인용정보 피인용 횟수 : 65  인용 특허 : 9

초록

To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.

대표청구항

1. A processing chamber component resistant to a plasma including fluorine and oxygen species, said component comprising:a high purity aluminum substrate where particulates formed from mobile impurities have a particle size distribution such that no more than 0.2% of the particles are larger than 20

이 특허에 인용된 특허 (9)

  1. Shan Hongching (San Jose CA) Lee Evans (Milpitas CA) Wu Robert (Pleasanton CA), Adjustable dc bias control in a plasma reactor.
  2. Oehrlein Gottlieb Stefan ; Vender David,NLX ; Zhang Ying ; Haverlag Marco,NLX, Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve pr.
  3. Dornfest Charles N. (Fremont CA) White John M. (Hayward CA) Bercaw Craig A. (Sunnyvale CA) Tomosawa Hiroyuki Steven (San Jose CA) Fodor Mark A. (Los Gatos CA), Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous envir.
  4. Schoepp Alan M. ; Denty ; Jr. William M. ; Barnes Michael, Chamber liner for semiconductor process chambers.
  5. Tanaka, Toshiyuki; Wada, Koji; Hisamoto, Jun; Sawada, Hiroki; Matsuura, Hiroshi, Chamber material made of Al alloy and heater block.
  6. Davis Paul H. (Orlando FL) Kennedy Mark T. (Oviedo FL) North William E. (Winter Springs FL), Gas turbine vane with enhanced cooling.
  7. Banholzer Thomas ; Marohl Dan ; Tepman Avi ; Mintz Donald M., Lid and door for a vacuum chamber and pretreatment therefor.
  8. William S. Kennedy ; Robert A. Maraschin ; Jerome S. Hubacek, Semiconductor processing equipment having tiled ceramic liner.
  9. Mautz Karl Emerson, Semiconductor wafer processing chamber for reducing particles deposited onto the semiconductor wafer.

이 특허를 인용한 특허 (65)

  1. Sun, Jennifer Y.; Kanungo, Biraja P., Anodization architecture for electro-plate adhesion.
  2. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Apparatus for an improved deposition shield in a plasma processing system.
  3. Escher,Gary; Allen,Mark A., Barrier layer for a processing element and a method of forming the same.
  4. Wang, Xikun; Xu, Li; Sun, Jennifer Y., Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrate.
  5. Bhatnagar, Ashish; Murugesh, Laxman, Corrosion-resistant aluminum component having multi-layer coating.
  6. Han, Nianci; Xu, Li; Shih, Hong; Zhang, Yang; Lu, Danny; Sun, Jennifer Y., Electroplating an yttrium-containing coating on a chamber component.
  7. Naim, Mahmood; Hammerich, David, Emissivity controlled coatings for semiconductor chamber components.
  8. Shih, Hong; Fu, Qian; Huang, Tuochuan; Casaes, Raphael; Outka, Duane, Extending storage time of removed plasma chamber components prior to cleaning thereof.
  9. Shih, Hong; Fu, Qian; Huang, Tuochuan; Casaes, Raphael; Outka, Duane, Extending storage time of removed plasma chamber components prior to cleaning thereof.
  10. Lee, Chengtsin; Sun, Jennifer Y., Fluoride glazes from fluorine ion treatment.
  11. Sun,Jennifer Y.; Thach,Senh; Dempster,James; Xu,Li; Pham,Thanh N., Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate.
  12. Sun, Jennifer Y.; Banda, Sumanth, High purity aluminum top coat on substrate.
  13. Sun, Jennifer Y.; Firouzdor, Vahid, High purity metallic top coat for semiconductor manufacturing components.
  14. Sun, Jennifer Y.; Firouzdor, Vahid, High purity metallic top coat for semiconductor manufacturing components.
  15. Sun, Jennifer Y.; Firouzdor, Vahid, High purity metallic top coat for semiconductor manufacturing components.
  16. Sun, Mei; Jensen, Earl; Quli, Farhat; Sharratt, Stephen, High temperature sensor wafer for in-situ measurements in active plasma.
  17. Harada,Yoshio; Takeuchi,Junichi; Nagayama,Nobuyuki; Mitsuhashi,Kouji, Internal member for plasma-treating vessel and method of producing the same.
  18. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  19. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  20. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  21. Lee, Chengtsin; Sun, Jennifer Y., Low temperature fluoride glasses and glazes.
  22. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  23. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  24. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  25. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  26. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  27. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  28. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved deposition shield in a plasma processing system.
  29. Nishimoto, Shinya; Mitsuhashi, Kouji; Saigusa, Hidehito; Takase, Taira; Nakayama, Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  30. Nishimoto,Shinya; Mitsuhashi,Kouji; Saigusa,Hidehito; Takase,Taira; Nakayama,Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  31. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  32. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  33. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  34. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  35. Fink, Steven T., Method and apparatus for improved baffle plate.
  36. Sun, Jennifer Y.; Duan, Ren-Guan; Yuan, Jie; Xu, Li; Collins, Kenneth S., Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas.
  37. Escher, Gary; Allen, Mark A.; Kudo, Yasuhisa, Method for adjoining adjacent coatings on a processing element.
  38. Choi, Soo Young; Park, Beom Soo; Shang, Quanyuan; Greene, Robert I.; White, John M.; Yim, Dong-Kil; Park, Chung-Hee; Law, Kam, Method for supporting a glass substrate to improve uniform deposition thickness.
  39. Han, Nianci; Xu, Li; Shih, Hong, Method of manufacturing a process chamber component having yttrium-aluminum coating.
  40. Sun, Jennifer Y.; Xu, Li; Collins, Kenneth S.; Graves, Thomas; Duan, Ren-Guan; Thach, Senh, Method of producing a plasma-resistant thermal oxide coating.
  41. Sun, Jennifer Y.; Collins, Kenneth S.; Duan, Ren-Guan; Thach, Senh; Graves, Thomas; He, Xiaoming; Yuan, Jie, Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber.
  42. Yu, Chengjin, Method of removing backing adhesive of carpet and the device thereof.
  43. Wang, Xikun; Xu, Li; Sun, Jennifer Y., Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal.
  44. Choi, Soo Young; White, John M.; Park, Beom Soo; Yim, Dong Kil, Particle reduction on surfaces of chemical vapor deposition processing apparatus.
  45. Fink, Steven T., Plasma processing system and baffle assembly for use in plasma processing system.
  46. Sun, Jennifer Y.; He, Xiao-Ming; Thach, Senh, Plasma resistant coatings for plasma chamber components.
  47. Sun, Jennifer Y.; Collins, Kenneth S.; Duan, Ren-Guan; Thach, Senh; Graves, Thomas; He, Xiaoming; Yuan, Jie, Plasma-resistant ceramics with controlled electrical resistivity.
  48. Han, Nianci; Xu, Li; Shih, Hong; Zhang, Yang; Lu, Danny; Sun, Jennifer Y., Process chamber component having electroplated yttrium containing coating.
  49. Han,Nianci; Xu,Li; Shih,Hong; Zhang,Yang; Lu,Danny; Sun,Jennifer Y., Process chamber component having electroplated yttrium containing coating.
  50. Han, Nianci; Xu, Li; Shih, Hong, Process chamber component having yttrium—aluminum coating.
  51. Avoyan, Armen; Fang, Yan; Outka, Duane; Shih, Hong; Whitten, Stephen, Processes for reconditioning multi-component electrodes.
  52. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  53. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  54. O'Donnell,Robert J.; Daugherty,John E., Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor.
  55. O'Donnell,Robert J.; Daugherty,John E., Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor.
  56. Sun, Jennifer Y.; Duan, Ren-Guan; Collins, Kenneth S., Protective coatings resistant to reactive plasma processing.
  57. Ohmi, Tadahiro; Shirai, Yasuyuki; Morinaga, Hitoshi; Kawase, Yasuhiro; Kitano, Masafumi; Mizutani, Fumikazu; Ishikawa, Makoto; Kishi, Yukio, Protective film structure of metal member, metal component employing protective film structure, and equipment for producing semiconductor or flat-plate display employing protective film structure.
  58. Sun, Jennifer Y.; Kanungo, Biraja P., Rare-earth oxide based monolithic chamber material.
  59. Sun, Jennifer Y.; Kanungo, Biraja P., Rare-earth oxide based monolithic chamber material.
  60. Lee, Ja-woo; Jeon, Chung-huan; Lee, Heok-jae; Youm, Jang-hyoun; Jeon, Sang-jean; Jung, Kwang-young; Kim, Sun-uk; Lee, Kang-ho; Cho, Jung-hyun; Wi, Soon-im; Yang, Yun-sik; Kim, Moo-jin; Choi, Jang-kyu, Remote plasma generator using ceramic.
  61. Sun, Jennifer Y.; Duan, Ren-Guan; Yuan, Jie; Xu, Li; Collins, Kenneth S., Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxide.
  62. Sun, Jennifer Y.; Duan, Ren-Guan; Yuan, Jie; Xu, Li; Collins, Kenneth S., Semiconductor processing apparatus comprising a solid solution ceramic formed from yttrium oxide, zirconium oxide, and aluminum oxide.
  63. Sun, Jennifer Y.; Duan, Ren-Guan; Yuan, Jie; Xu, Li; Collins, Kenneth S., Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus.
  64. Sun, Jennifer Y.; Duan, Ren-Guan; Yuan, Jie; Xu, Li; Collins, Kenneth S., Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance.
  65. Sun, Jennifer Y; Duan, Ren-Guan; Collins, Kenneth S, Semiconductor processing apparatus with protective coating including amorphous phase.
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