초록 ▼

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invent

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

대표청구항 ▼

1. A photovoltaic device comprising, an amorphous silicon-containing i-layer having a thickness of about 3000 Å to about 5500 Å, a p-layer having a thickness of no more than about 80 Å, the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic pe

1. A photovoltaic device comprising, an amorphous silicon-containing i-layer having a thickness of about 3000 Å to about 5500 Å, a p-layer having a thickness of no more than about 80 Å, the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180° C. to about 220° C, and where the device is more efficient at 80° C. than at 40° C. 2. The photovoltaic device of claim 1 wherein the i-layer is at least about 3500 Å thick. 3. The photovoltaic device of claim 1 in the form of module and wherein the module is on a roof surface such that a bottom surface of the module is no more than about 1 inch from the roof surface. 4. The photovoltaic device of claim 1 wherein the layer is at least about 5000 Å. 5. A process for generating electric current comprising exposing a photovoltaic device comprising a p-layer and an amorphous silicon-containing i-layer to sunlight wherein the photovoltaic device is at a temperature of at least about 50° C., the amorphous silicon-containing i-layer has a thickness of about 3000 Å to about 5500 Å, the p-layer has a thickness of no more than about 80 Å the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180° C. to about 220° C., or and wherein than at 80° C. than at 40° C. 6. The process of claim 5 wherein the temperature is about 50° C. to about 100° C. 7. The process of claim 6 wherein the photovoltaic devices is at a temperature of about 60° C. to about 90° C. 8. The process of claim 5 wherein the photovoltaic device is in the form of a module and wherein the module is positioned on a roof surface such-that a bottom surface of the module is no more than about 1 inch from the roof surface. 9. A process for generating electric current comprising exposing a photovoltaic device comprising a p-layer and an amorphous silicon-containing i-layer to sunlight wherein the photovoltaic device is at a temperature of at least about 50° C. the amorphous silicon-containing i-layer has a thickness of about 3000 Å to about 550 Å, the p-layer has a thickness of no more than about 100 Å, the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180° C. to about 220° C. the device is more efficient at 80° C. at 40° C., the photovoltaic device is in the form of a module and the module is positioned on a roof outer surface such that a bottom surface of the module is no more than about 3 inches from the roof outer surface and wherein air is located in a space between the module and the roof outer surface and horizontal movement of air in the space between the bottom surface and the roof motor surface is no more than about 1 ft/sec. 10. A system comprising a building surface, a photovoltaic device in the form of a module, wherein the photovoltaic device comprises an amorphous silicon-containing i-layer having thickness of about 3000 Å to about 5500 Å, a p-layer having a thickness of no more than about 100 Å, the p-layer comprising amorphous silicon-carbon and containing about 10 to about 30 atomic percent carbon and about 0.2 to about 2.0 atomic percent boron and deposited at a temperature of about 180° C. to about 220° C., and, wherein a bottom surface of the module is spaced from the building outer surface by a distance of no more than about 1 inch, and wherein the device is more efficient at 80° C. than at 40° C. 11. The system of claim 10 wherein the module is operated at a temperature of at least about 50° C . 12. The system of claim 10 wherein the i-layer has a thickness of at east about 4000 Å. 13. The system of claim 10 wherein the p-layer has a thickness of no more than about 80 Å. 14. The system of claim 10 wherein the distance is no more than about 0.5 inches.