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A double-gate vertical MOSFET transistor is described along with an associated fabrication method. The MOSFET transistor is configured with separate gates on each side of a vertical source-drain channel that is capped by an insulation layer. The fabrication process generally comprises forming a sili

A double-gate vertical MOSFET transistor is described along with an associated fabrication method. The MOSFET transistor is configured with separate gates on each side of a vertical source-drain channel that is capped by an insulation layer. The fabrication process generally comprises forming a silicon-insulator stack having a silicon fin (channel) capped with insulation. The opposing ends of the silicon-insulator stack being configured with areas capable of receiving source and drain contacts. The vertical surfaces of the silicon fin are insulated prior to the formation of gate electrodes adjacent the two opposing sides of the silicon-insulator stack. By way of example, the gate electrodes are formed by depositing a thick layer of conductive gate material over the substrate and then removing the adjoining upper portion, such as by polishing. Portions of each gate electrode are configured with areas capable of receiving a gate contact.

대표청구항 ▼

1. A method of fabricating a double-gate vertical channel MOSFET, having separate gates, on a substrate, comprising:forming a silicon-insulator stack wherein a silicon fin is capped with insulation;insulating the vertical surfaces of the silicon fin;forming separate Rate electrodes on opposing sides

1. A method of fabricating a double-gate vertical channel MOSFET, having separate gates, on a substrate, comprising:forming a silicon-insulator stack wherein a silicon fin is capped with insulation;insulating the vertical surfaces of the silicon fin;forming separate Rate electrodes on opposing sides of the silicon fin, wherein conventional process steps may be thereafter utilized to form the contacts and complete fabrication of the double-gate vertical MOSFET transistor;wherein the process of forming separate gate electrodes is performed by depositing a substantially conductive gate material over the substrate followed by the removal of the upper portion of the conductive material until the insulation cap of the silicon-insulator stack protrudes through the conductive material. 2. A method as recited in claim 1, wherein the opposing ends of each gate electrode are configured during the gate electrode forming process with areas capable of receiving a gate contact. 3. A method as recited in claim 1, wherein chemical-mechanical polishing is utilized for removing the gate material covering the silicon fin capped with insulation. 4. A method of fabricating a double-gate vertical MOSFET transistor on a SOI substrate, comprising:depositing a layer of insulation over the SOI substrate;selective etching to create a fin of silicon capped with insulation;insulating the vertical walls of the silicon fin;depositing a gate electrode material to substantially cover the fin; andremoving of upper portions of the gate electrode material until the insulation cap is exposed such that the gate electrode material is divided into a first gate and a second gate of the MOSFET transistor separated by the silicon fin and insulation cap, after which conventional processing steps may be utilized to pattern the gate electrodes, form connections, and complete MOSFET transistor fabrication. 5. A method as recited in claim 4, wherein the layer of insulation comprises a silicon nitride material (S 3 N 4 ). 6. A method as recited in claim wherein the height of the fin is within the range from 800 Angstroms to 1500 Angstroms. 7. A method as recited in claim 4, wherein the selective etching has been patterned to create source-drain channel regions having ends configured with areas capable of receiving respective source and drain contacts. 8. A method as recited in claim 4, wherein the vertical walls of the silicon fin are insulated by forming a layer of gate oxide on them. 9. A method as recited in claim 4, wherein the gate electrode material is substantially conductive and deposited to a thickness of from 3000 Angstroms to 6000 Angstroms. 10. A method as recited in claim 4, wherein chemical-mechanical polishing is utilized for, removing the gate electrode material covering the silicon fin.