초록 ▼

A method for forming a fin structure on a silicon-on-insulator (SOI) wafer that includes a silicon layer on an insulating layer that is formed over a semiconductor substrate includes etching the silicon layer using a first etch procedure, etching, following the first etch procedure, the silicon laye

A method for forming a fin structure on a silicon-on-insulator (SOI) wafer that includes a silicon layer on an insulating layer that is formed over a semiconductor substrate includes etching the silicon layer using a first etch procedure, etching, following the first etch procedure, the silicon layer using a second etch procedure, and etching, following the second etch procedure, the silicon layer using a third etch procedure to form a T-shaped fin structure.

대표청구항 ▼

1. A semiconductor device, comprising:a substrate;an insulating layer formed on the substrate;a fin structure having a T-shaped cross-section and being formed on a portion of the insulating layer, the fin structure including a lower portion and an upper portion, wherein a width of the upper portion

1. A semiconductor device, comprising:a substrate;an insulating layer formed on the substrate;a fin structure having a T-shaped cross-section and being formed on a portion of the insulating layer, the fin structure including a lower portion and an upper portion, wherein a width of the upper portion of the fin structure ranges from about 150 Å to 600 Å and a width of the lower portion of the fin structure ranges from about 90 Å to 300 Å; anda gate formed on the insulating layer and surrounding the T-shaped fin structure. 2. The semiconductor device of claim 1 wherein the gate comprises a polysilicon material. 3. The semiconductor device of claim 1 wherein the insulating layer comprises a buried oxide layer. 4. The semiconductor device of claim 1 wherein the fin structure comprises silicon, germanium or silicon-germanium. 5. A semiconductor device comprising:a fin structure comprising an upper portion and a lower portion, a width of the upper portion of the fin structure ranging from about 150 Å to 600 Å and a width of the lower portion of the fin structure ranging from about 90 Å to 300 Å; anda gate structure formed adjacent the fin structure.