[특허]Apparatus for determining doping concentration of a semiconductor wafer

[미국특허] Apparatus for determining doping concentration of a semiconductor wafer 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01R-027/08
출원번호	US-0616641 (2003-07-09)
발명자 / 주소	Howland, William H.
출원인 / 주소	Solid State Measurements, Inc.
대리인 / 주소	Webb Ziesenheim Logsdon Orkin & Hanson, P.C.
인용정보	피인용 횟수 : 5 인용 특허 : 21

초록 ▼

An apparatus for measuring at least one electrical property of a semiconductor wafer includes a probe including a shaft having at a distal end thereof a conductive tip for electrically communicating with an object area of the semiconductor wafer. The apparatus further includes a device for applying an electrical stimulus between the conductive tip and the object area, and a device for measuring a response of the semiconductor wafer to the electrical stimulus and for determining from the response the at least one electrical property of the object area of the semiconductor wafer. A probe guard is included and surrounds the shaft of the probe adjacent the distal end of the probe. The probe guard also insulates the conductive tip from the semiconductor wafer.

대표청구항 ▼

1. An apparatus for determining doping concentration of a semiconductor wafer comprising:a probe having an electrically conductive tip and an electrical insulator covering at least a distal end of the conductive tip;means for applying a capacitance-voltage (CV) type electrical stimulus between the electrically conductive tip and a semiconductor wafer when the electrical insulator is in contact with the semiconductor wafer;means for measuring a CV response of the semiconductor wafer to the CV type electrical stimulus; andmeans for determining from the CV response a doping concentration of the semiconductor wafer. 2. The apparatus as set forth in claim 1, wherein:the electrical insulator contacts a surface of the semiconductor wafer; andthe doping concentration is determined for a near surface region of the semiconductor wafer adjacent the electrical insulator. 3. The apparatus as set forth in claim 1, wherein the dopant is one of P-type carriers and N-type carriers. 4. The apparatus as set forth in claim 1, wherein the electrical insulator surrounds the electrically conductive tip and at least part of a shaft of the probe adjacent the electrically conductive tip. 5. The apparatus as set forth in claim 1, wherein contact between the electrical insulator and the semiconductor wafer forms a Metal-Oxide-Semiconductor (MOS) type junction, where the electrically conductive tip is the metal, the electrical insulator functions in the same manner as an oxide layer and the semiconductor wafer is the semiconductor. 6. The apparatus as set forth in claim 1, wherein the measuring means measures the CV response to within one Debye length from the interface of the electrical insulator and the semiconductor wafer. 7. The apparatus as set forth in claim 1, wherein at least the electrically conductive tip is formed from an elastically deformable material. 8. The apparatus as set forth in claim 1, wherein the electrical insulator contacts one of (i) a semiconductor material of the semiconductor wafer and (ii) a dielectric or oxide layer overlaying the semiconductor material.

이 특허에 인용된 특허 (21) 인용/피인용 타임라인 분석

Bulucea Constantin (Milpitas CA) Grant Mark A. (San Jose CA), Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction.
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Long Wei ; Liu Yowjuang W. ; Jiang Chun, C-V method to extract lateral channel doping profiles of MOSFETs.
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Doehler Joachim (Union Lake MI) Izu Masatsugu (Birmingham MI), Cathode assembly with localized profiling capabilities.
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Long Tom ; Sabri Mohamed ; Saunders J. Lynn, Contact device for making connection to an electronic circuit device.
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Vaynkof Yakov F. (Woodland Hills CA) Zimmermann Karl F. (Agoura CA) Shorter Jerry W. (Camarillo CA) Bond Joseph K. (Newbury Park CA), Contactor with elastomer encapsulated probes.
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Faktor Marc M. (Bushey Heath GB2) Ambridge Thomas (Harrow Weald GB2) Bremner Ean G. (Stanmore GB2), Determining semiconductor characteristic.
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Abbe Robert C. (Newton MA) Judell Neil H. (Jamaica Plain MA) Poduje Noel S. (Needham Heights MA), Improved spatial resolution measurement system and method.
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Takayama Michio,JPX ; Matsumoto Kazuya,JPX ; Kamiya Yoshitaka,JPX ; Hasegawa Mamoru,JPX, Integrated SPM sensor having a photodetector mounted on a probe on a free end of a supported cantilever.
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Kister January ; Lobacz Jerzy, Membrane for holding a probe tip in proper location.
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Watanabe Takashi,JPX ; Yoshida Minako,JPX, Method of producing micro contact structure and contact probe using same.
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Maddix John Thomas ; Palagonia Anthony Michael ; Pikna Paul Joseph ; Vallett David Paul, Micro probe ring assembly and method of fabrication.
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Maddix John Thomas ; Palagonia Anthony Michael ; Pikna Paul Joseph ; Vallett David Paul, Micro probe ring assembly and method of fabrication.
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Williams Clayton C ; Davis Robert C ; Neuzil Pavel, Micromachined probes for nanometer scale measurements and methods of making such probes.
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Davari Bijan (Troy NY) Das Pankaj (Cohoes NY), Non-destructive testing of semiconductors using acoustic wave method.
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Robert G. Mazur ; Robert J. Hillard, Non-invasive electrical measurement of semiconductor wafers.
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Self Bobby J., Perimeter trace probe for plastic ball grid arrays.
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Chee Wan Soo,TWX, Probe assembly for testing.
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Potter Curtis Nathan, Probe head assembly.
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Verkuil Roger Leonard, Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer.
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Takahashi Hiroshi,JPX ; Shimizu Nobuhiro,JPX ; Shirakawabe Yoshiharu,JPX ; Ichihara Susumu,JPX ; Despont Michel,CHX, Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor.
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Leedy, Glenn J., Test device for testing integrated circuits.
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이 특허를 인용한 특허 (5) 인용/피인용 타임라인 분석

Howland, William H., Apparatus and method for determining electrical properties of a semiconductor wafer.
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Howland, William H.; Mazur, Robert G., Apparatus and method for measuring semiconductor wafer electrical properties.
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Haight, Richard A., Determining doping type and level in semiconducting nanostructures.
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Chedid,Loutfallah Georges; Makhlouf,Makhlouf M.; Sisson, Jr.,Richard D., Real-time carbon sensor for measuring concentration profiles in carburized steel.
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Howland, Jr.,William H.; Hillard,Robert J.; Hung,Steven Chi Shin, Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Apparatus for determining doping concentration of a semiconductor wafer 원문보기