IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0678670
(2003-10-02)
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발명자
/ 주소 |
- Jorgensen, Betty S.
- Danen, Wayne C.
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출원인 / 주소 |
- The Regents of the University of California
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
3 인용 특허 :
11 |
초록
▼
Fluoroalkylsilane-coated metal particles having a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer are prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated s
Fluoroalkylsilane-coated metal particles having a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer are prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.
대표청구항
▼
1. A method of releasing chemical energy, comprising the steps of:(a) providing a energetic powder comprising an oxidant powder blended with a reductant powder, wherein the reductant powder comprises particles having a central metal core, a buffer layer that surrounds the central metal core, and a f
1. A method of releasing chemical energy, comprising the steps of:(a) providing a energetic powder comprising an oxidant powder blended with a reductant powder, wherein the reductant powder comprises particles having a central metal core, a buffer layer that surrounds the central metal core, and a fluoroalkylsilane layer that surrounds and is covalently bonded to the buffer layer; and(b) disrupting the buffer layer so that the reducant powder and oxidant powder chemically react and release energy. 2. The method of claim 1, wherein the central metal core comprises Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Ni, Cu, Ag, Zn, Mg, Cd, Li, Na, K, Rb, Cs, Fr, Ba, Ca, Be, B, Al, Ga, In, TI, or mixtures thereof. 3. The method of claim 1, wherein the buffer layer comprises titanium oxide, zirconium oxide, halfnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, techetium oxide, rhenium oxide, iron oxide, ruthenium oxide, osmium oxide, nickel oxide, copper oxide, silver oxide, zinc oxide, magnesium oxide, cadmium oxide, lithium oxide, sodium oxide, potassium oxide, rubidium oxide, cesium oxide, francium oxide, barium oxide, calcium oxide, beryllium oxide, boron oxide, aluminum oxide, gallium oxide, indium oxide, tellurium oxide, and mixtures thereof. 4. The method of claim 1, wherein the fluoroalkylsilane layer comprises a material represented by the formula n F 2n+1 (Q)Si(O)YZ,wherein n is an integer of about 1-30; wherein Q represents a (CH 2 ) m group wherein m is an integer of about 0-6, a vinyl group, an ethynyl group, an aryl group, or a group including a silicon atom or an oxygen atom; Y represents oxygen, an alkyl group, an aryl group, a fluoroalkyl group, or a fluoroaryl group; and Z represents oxygen, an alkyl group, a fluoroalkyl group, or a fluoroaryl group. 5. The method of claim 1, wherein the fluoroalkylsilane layer comprises a material represented by the formula n F 2n+1 (CH 2 ) 2 SiOYZwherein n is equal to a positive integer of about 1-30, and wherein Y represents oxygen, an alkyl group, an aryl group, a fluoroalkyl group, or a fluoroaryl group; and Z represents oxygen, an alkyl group, a fluoroalkyl group, or a fluoroaryl group. 6. The method of claim 1, wherein said fluoroalkylsilane layer comprises a material represented by the formula 3 (CF 2 ) n (CH 2 ) 2 SiO 3 wherein n is an integer of about 1-30. 7. The method of claim 1, wherein the central metal core comprises aluminum and the buffer layer comprises aluminum oxide. 8. The method of claim 1, wherein the oxidant powder comprises MoO 3 .
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