초록

An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10 19 atoms/cm 3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.

대표청구항 ▼

1. An electrically conducting ultrananocrystalline diamond having not less than 10 19 atoms/cm 3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω.cm) −1 . 2. The electrically conducting ultrananocrystalline diamond of claim 1, wherein the

1. An electrically conducting ultrananocrystalline diamond having not less than 10 19 atoms/cm 3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω.cm) −1 . 2. The electrically conducting ultrananocrystalline diamond of claim 1, wherein the ultrananocrystalline diamond is a film. 3. The electrically conducting ultrananocrystalline diamond of claim 1, wherein the ultrananocrystalline diamond has grain boundaries that are about 0.2 to about 2.0 nm wide. 4. The ultrananocrystalline diamond of claim 1, wherein the average grain size is between about 3 and 15 nm. 5. The electrically conducting-ultrananocrystalline diamond of claim 1, wherein the conductivity at ambient temperature is not less than about 1 (Ωcm) −1 . 6. The electrically conducting ultrananocrystalline diamond of claim 1, wherein the conductivity at ambient temperature is not less than about 10 (Ωcm) −1 . 7. The electrically conducting ultrananocrystalline diamond of claim 1, wherein the conductivity at ambient temperature is not less than about 100 (Ωcm) −1 . 8. An electrically conducting ultrananocrystalline diamond having an average grain size of about 15 nm or less and nitrogen present in an amount of not less than about 10 19 atoms/cm 3 made by the process of providing a source of carbon and a source of nitrogen and subjecting the sources of carbon and nitrogen in vapor form to an energy source in an noble-gas atmosphere to create a plasma to form an ultrananocrystalline material, wherein carbon is present in an amount less than about 2 atom percent of the source gas. 9. The electrically conducting ultrananocrystalline diamond of claim 8, wherein the diamond is a film grown on a substrate maintained at a temperature not less than about 350° C. during the deposition process. 10. The electrically conducting ultrananocrystalline diamond of claim 8, wherein the source of carbon is one or more of CH 4 or a precursor thereof and C 2 H 2 or a precursor thereof and a C 60 compound. 11. The electrically conducting ultrananocrystalline diamond of claim 10, wherein the nitrogen is present in the source gas in an amount of less than about 20% by volume. 12. The electrically conducting ultrananocrystalline diamond of claim 11, wherein the atomic percent of carbon in the source gas is about 1% and the nitrogen is present in an amount less than about 20% by volume, the balance being a noble gas. 13. The electrically conducting ultrananocrystalline diamond of claim 11, wherein the ultrananocrystalline diamond is a film grown on a substrate maintained at about 350-800° C. at total pressures of not less than about 100 Torr. 14. The electrically conducting ultrananocrystalline diamond of claim 13, wherein the substrate is a metal or a non-metal. 15. The electrically conducting ultrananocrystalline diamond of claim 13, wherein the substrate is silicon or silicon dioxide. 16. The electrically conductive ultrananocrystalline diamond of claim 8, wherein the conductivity at ambient temperature is not less than about 0.1 (Ωcm) −1 . 17. The electrically conductive ultrananocrystalline diamond of claim 8, wherein the conductivity at ambient temperature is not less than about 1 (Ωcm) −1 . 18. The electrically conductive ultrananocrystalline diamond of claim 8, wherein the conductivity at ambient temperature is not less than about 10 (Ωcm) −1 . 19. The electrically conducting ultrananocrystalline diamond of claim 8, wherein the conductivity at ambient temperature is not less than about 100 (Ωcm) −1 . 20. A process for producing electrically conducting ultrananocrystalline diamond films, comprising subjecting a mixture of nitrogen and carbon containing gas and noble gas to an energy source to deposit nitrogen-incorporated ultrananocrystalline diamond films, wherein the atomic percent of carbon in the source gas is less t han about 2%, and the nitrogen is present in the range of from about 2% to about 25% by volume to produce an ultrananocrystalline material with nitrogen present in an amount not less than about 10 19 atoms/cm 3 . 21. The process claim 20, wherein the source of carbon is one or more of CH 4 or a precursor thereof and C 2 H 2 or a precursor thereof and a C 60 compound. 22. The process of claim 21, wherein the atomic percent of carbon in the source gas is about 1% and the nitrogen is present in an amount not greater than about 20% by volume, the balance being argon. 23. The process of claim 22, wherein the electrically conducting ultrananocrystalline diamond is a film grown on a Si or SiO 2 substrate maintained at about 800° C. at total pressures of about 100 Torr and about 800 watts of microwave power. 24. The process of claim 20, wherein the electrically conducting ultrananocrystalline diamond has a conductivity at ambient temperature of not less than about 0.1 (Ωcm) −1 . 25. The process of claim 20, wherein the electrically conducting ultrananocrystalline diamond has a conductivity at ambient temperature of not less than about 1 (Ωcm) −1 . 26. The process of claim 20, wherein the electrically conducting ultrananocrystalline diamond has a conductivity at ambient temperature of not less than about 10 (Ωcm) −1 . 27. The process of claim 20, wherein the electrically conducting ultrananocrystalline diamond has a conductivity at ambient temperature of not less than about 100 (Ωcm) −1 . 28. A process for producing electrically conducting ultrananocrystalline diamond material having a predetermined conductivity, comprising subjecting a mixture of nitrogen and carbon containing gas and noble gas to an energy source to deposit nitrogen-incorporated ultrananocrystalline diamond films, wherein the atomic percent of carbon in the source gas is less than about 2%, and the nitrogen at a preselected concentration in the range of from about 2% to about 25% by volume to produce an ultrananocrystalline material with nitrogen present in an amount not less than about 10 19 atoms/cm 3 having a predetermined conductivity of not less than about 0.01 (Ωcm) −1 .