IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
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| 국제특허분류(IPC7판) |
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| 출원번호 |
US-0754317
(2004-01-09)
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발명자
/ 주소 |
- Singleton, Eric W.
- Duxstad, Kristin Joy
- Hintz, Michael B.
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| 출원인 / 주소 |
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| 인용정보 |
피인용 횟수 :
10 인용 특허 :
10 |
초록
▼
This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second
This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y 2 O 3 , HfO 2 , MgO, Al 2 O 3 , NiO, Fe 2 O 3 , and Fe 3 O 4 . The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.
대표청구항
▼
1. A spin valve sensor comprising:a synthetic antiferromagnetic layer, wherein the synthetic antiferromagnetic layer is composed of a reference layer, a coupling layer, and a pinned layer, further wherein the coupling layer is a mixture of an antiferromagnetic coupling material and a specular scatte
1. A spin valve sensor comprising:a synthetic antiferromagnetic layer, wherein the synthetic antiferromagnetic layer is composed of a reference layer, a coupling layer, and a pinned layer, further wherein the coupling layer is a mixture of an antiferromagnetic coupling material and a specular scattering material. 2. The spin valve sensor of claim 1, wherein a spacer layer is positioned next to the reference layer. 3. The spin valve sensor of claim, 2 , wherein a free layer is positioned next to the spacer layer. 4. The spin valve sensor of claim 3, wherein a specular scattering layer is positioned next to the free layer. 5. The spin valve sensor of claim 4, wherein an antiferromagnetic layer is positioned next to the pinned layer. 6. The spin valve sensor of claim 5, wherein a seed layer is positioned next to the antiferromagnetic layer. 7. The spin valve sensor of claim 1, wherein the antiferromagnetic coupling material is selected from the group consisting Ru, Rh, Cr, or a mixture thereof. 8. The spin valve sensor of claim 1, wherein the specular scattering material is selected from a group consisting Y 2 O 3 , HfO 2 , MgO, Al 2 O 3 , NiO, Fe 2 O 3 , or Fe 3 O 4 . 9. The spin valve sensor of claim 1, wherein the pinned layer and the reference layer are selected from group consisting of Co and Fe. 10. A magnetoresistive sensor comprising:a specular scattering layer;a free layer;a spacer layer; anda synthetic antiferromagnetic layer including a reference layer, a pinned layer and a coupling layer positioned between the reference layer and pinned layer,wherein the coupling layer is a single layer composed of a mixture of an antiferromagnetic material and a specular scattering material. 11. The magnetoresistive sensor of claim 10, wherein wherein the antiferromagnetic material is selected from the group consisting Ru, Rh, Cr, or a mixture thereof. 12. The magnetoresistive sensor of claim 10, wherein the specular scattering material is selected from a group consisting Y 2 O 3 , HfO 2 , MgO, Al 2 O 3 , NiO, Fe 2 O 3 , or Fe 3 O 4 . 13. The magnetoresistive sensor of claim 10, wherein an antiferromagnetic layer is positioned on the synthetic antiferromagnetic layer. 14. The magnetoresistive sensor of claim 12, antiferromagnetic layer is selected from a group comprising PtMn, NiMn, IrMn, and PtCrMn. 15. A spin valve sensor comprising:a specular scattering layer;a free layer positioned on the specular scattering layer;a spacer layer positioned on the free layer; anda synthetic antiferromagnetic layer positioned on the spacer layer, the synthetic antiferromagnetic layer including a reference layer, a pinned layer and a coupling layer positioned between the reference layer and pinned layer, wherein the coupling layer is composed of a mixture of an antiferromagnetic material and a specular scattering material. 16. The spin valve sensor of claim 15, wherein wherein the antiferromagnetic material is selected from the group consisting Ru, Rh, Cr, or a mixture thereof. 17. The spin valve sensor of claim 15, wherein the specular scattering material is selected from a group consisting Y 2 O 3 , HfO 2 , MgO, Al 2 O 3 , NiO, Fe 2 O 3 , or Fe 3 O 4 . 18. The spin valve sensor of claim 15, wherein an antiferromagnetic layer is positioned on the synthetic antiferromagnetic layer. 19. The spin valve sensor of claim 18, wherein a seed layer is positioned on the antiferromagnetic layer.
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