초록 ▼

The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conducti

The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.

대표청구항 ▼

1. A pad assembly for plating and polishing a semiconductor workpiece, comprising:a cylindrical anode having an outer surface; anda plurality of pad strips mounted on the cylindrical anode which protrudes from the outer surface of the cylindrical anode and configured to planarize and fill cavities o

1. A pad assembly for plating and polishing a semiconductor workpiece, comprising:a cylindrical anode having an outer surface; anda plurality of pad strips mounted on the cylindrical anode which protrudes from the outer surface of the cylindrical anode and configured to planarize and fill cavities on the semiconductor workpiece. 2. The pad assembly according to claim 1, wherein the cylindrical anode is adapted to rotate about a first axis. 3. The pad assembly according to claim 1, wherein the pad strips polish the workpiece. 4. The pad assembly according to claim 1, wherein the workpiece comprises one of a wafer, a fiat panel, and a magnetic film head. 5. A pad assembly for plating and polishing a semiconductor workpiece, comprising:a circular or donut shaped anode having a planar top surface; anda plurality of pad strips mounted on the planar top surface of the anode such that the plurality of pad strips protrude from the top surface of the anode. 6. The pad assembly according to claim 5, wherein the anode is adapted to rotate about a first axis. 7. The pad assembly according to claim 5, wherein the pad strips polish the workpiece. 8. The pad assembly according to claim 5, wherein the workpiece comprises one of a wafer, a flat panel, and a magnetic film head. 9. An anode assembly for plating a semiconductor workpiece, comprising:an anode having an outer surface; anda plurality of pad strips or fixed features attached on the anode such that the plurality of pad strips protrude from the outer surface of the anode and is configured to planarize and fill cavities on the semiconductor workpiece. 10. The pad assembly according to claim 9, wherein the anode is adapted to rotate about a first axis. 11. The pad assembly according to claim 9, wherein the pad strips or fixed features are in proximity to the workpiece. 12. The pad assembly according to claim 11, wherein the proximity between the pad strips or fixed features and the workpiece provides a meniscus solution of electrolyte for plating the semiconductor workpiece.