IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0275337
(2001-07-03)
|
| 국제출원번호 |
PCT/DE01/02451
(2001-07-03)
|
| 국제공개번호 |
WO02/03482
(2002-01-10)
|
|
발명자
/ 주소 |
- Luyken, Richard Johannes
- Schlö
- sser, Till
- Haneder, Thomas Peter
- Hö
- nlein, Wolfgang
- Kreupl, Franz
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
128 인용 특허 :
0 |
초록
▼
A field-effect transistor that having a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire. The field-effect transistor also has at least one nanotube, which forms a ga
A field-effect transistor that having a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire. The field-effect transistor also has at least one nanotube, which forms a gate region of the field-effect transistor, the nanotube being a semiconducting and/or metallically conductive nanotube. The nanowire and the nanotube are arranged at a distance from one another or set up in such a manner that it is substantially impossible for there to be a tunneling current between the nanowire and the nanotube, and that the conductivity of the channel region of the nanowire can be controlled by means of a field effect as a result of an electric voltage being applied to the nanotube.
대표청구항
▼
1. A field-effect transistor, comprising:a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire; andat least one nanotube, which forms a gate region of the field-effect t
1. A field-effect transistor, comprising:a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire; andat least one nanotube, which forms a gate region of the field-effect transistor, the nanotube being a semiconducting and/or metallically conductive nanotube,the channel region formed by the nanowire and a tip of the nanotube being arranged adjacent to one another and at a distance from one another in such a manner or being set up in such a manner that it is substantially impossible for there to be a tunneling current between the nanowire and the nanotube, and that the conductivity of the channel region of the nanowire can be controlled by means of a field effect as a result of an electric voltage being applied to the nanotube. 2. The field-effect transistor as claimed in claim 1, in which the nanowire is a first nanotube, which forms a source region, a channel region and a drain region of the field-effect transistor, the first nanotube being a semiconducting and/or metallically conductive nanotube, in which the nanotube is formed by a second nanotube, which forms the gate region of the field-effect transistor, the second nanotube being a semi-conducting and/or metallically conductive nanotube, the first nanotube and the second nanotube being arranged at a distance from one another which is such that it is substantially impossible for there to be a tunneling current between the nanotubes and that the conductivity of the channel region of the first nanotube can be controlled by means of a field effect as a result of an electric voltage being applied to the second nanotube. 3. The field-effect transistor as claimed in claim 2, in which the first nanotube or the second nanotube is a carbon nanotube. 4. The field-effect transistor as claimed in one of claims 1 to 3, in which electrically non-conductive gas is introduced between the nanowire and the nanotube. 5. The field-effect transistor as claimed in claim 2 in which the first nanotube and/or the second nanotube has a plurality of walls. 6. The field-effect transistor as claimed in claim 2 in which an insulator layer is applied at least to the channel region of the first nanotube, andin which the second nanotube is applied to the insulator layer. 7. The field-effect transistor as claimed in claim 6, in which the insulator layer contains an oxide material or a nitride material. 8. The field-effect transistor as claimed in claim 1 in which the nanotube which forms the gate region of the field-effect transistor has three ends, it being possible for an electric voltage to be applied to one end, and the two further ends being arranged in such a manner that, as a result of the applied electric voltage, they can be used to change the conductivitiy of the channel region of the nanowire. 9. The field-effect transistor as claimed in claim 2 in which a third nanotube is provided, which forms a second gate region of the field-effect transistor, the third nanotube being a semiconducting and/or metallically conductive nanotube, andthe nanowire and the third nanotube being arranged at a distance from one another which is such that it is substantially impossible for there to be a tunneling current between the nanowire and the third nanotube, and that the conductivity of the channel region of the nanowire can be controlled by means of a field effect as a result of an electric voltage being applied to the third nanotube. 10. The field-effect transistor as claimed in claim 9 in which the nanotube which forms the gate region of the field-effect transistor and the third nanotube are electrically coupled to one another. 11. The field-effect transistor as claimed in claim 1 in which at least one of the nanotubes includes a multiplicity of nanotubes. 12. The field-effect transistor as claimed in claim 1, in which the at least one nanotube is applied to the nanowire and include s an electrically insulating region and a semiconducting region or a metallically conductive region,the insulating region of the nanotube being applied to the channel region of the nanowire in such a manner that the insulating region of the nanotube forms an insulator of the field-effect transistor and, that the semiconducting region or the metallically conductive region of the nanotube forms a gate region of the field-effect transistor. 13. The field-effect transistor as claimed in claim 12, in which the nanowire is a silicon nanowire. 14. The field-effect transistor as claimed in claim 12 in which the nanowire is a further nanotube. 15. The field-effect transistor as claimed in claim 14, in which the further nanotube is a further carbon nanotube. 16. The field-effect transistor as claimed in claim 14 or 15, in which the further nanotube includes at least one semiconducting region and at least one metallically conductive region. 17. The field-effect transistor as claimed in claim 16, in which the semiconducting region is arranged between two metallically conductive regions. 18. The field-effect transistor as claimed in claim 12 in which the insulating region of the nanotube is a boron nitride nanotube. 19. The field-effect transistor as claimed in claim 12 in which the semiconducting region or the metallically conductive region of the nanotube is a carbon nanotube. 20. The field-effect transistor as claimed in claim 12 in which at least one of the nanotubes includes a plurality of walls. 21. A field-effect transistor, comprising:a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire; andat least one nanotube, which form a gate region of the field-effect transistor, the nanotube being a semiconducting and/or metallically conductive nanotube,the nanowire and the nanotube being arranged at a distance from one another, at least one further electrically insulating nanotube as a gate insulator arranged concentrically between the nanowire and the nanotube in such a manner or being set up in such a manner that it is substantially impossible for there to be a tunneling current between the nanowire and the nanotube, and that the conductivity of the channel region of the nanowire can be controlled by means of a field effect as a result of an electric voltage being applied to the nanotube. 22. The field-effect transistor as claimed in claim 21, having the nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor,having the at least one electrically insulating nanotube which is applied to the nanowire and forms the gate insulator of the field-effect transistor, andhaving the at least one electrically semiconducting or metallically conductive nanotube which is applied to the insulating nanotube and forms a gate region of the field-effect transistor. 23. The field-effect transistor as claimed in claim 21, in which the electrically insulating nanotube is a boron nitride nanotube. 24. The field-effect transistor as claimed in claim 21, in which the semiconducting or metallically conductive nanotube is a carbon nanotube.
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