초록 ▼

After a copper diffusion preventing film 4 is formed on a copper pad 1 , a barrier metal including a titanium film 5 , a nickel film 6 , and a palladium film 7 is formed on the copper diffusion preventing film 4 . The copper diffusion preventing film formed on the copper pad suppresses diffusion of

After a copper diffusion preventing film 4 is formed on a copper pad 1 , a barrier metal including a titanium film 5 , a nickel film 6 , and a palladium film 7 is formed on the copper diffusion preventing film 4 . The copper diffusion preventing film formed on the copper pad suppresses diffusion of copper. Even when a solder bump is formed on the copper pad, diffusion of tin in the solder and copper is suppressed. This prevents formation of an intermetallic compound between copper and tin, so no interface de-adhesion or delamination occurs and a highly reliable connection is obtained. This structure can be realized by a simple fabrication process unlike a method of forming a thick barrier metal by electroplating. In this invention, high shear strength can be ensured by connecting a solder bump, gold wire, or gold bump to a copper pad without increasing the number of fabrication steps.

대표청구항 ▼

1. A semiconductor device in which a semiconductor element having a copper pad is mounted on a wiring substrate, comprising:copper diffusion preventing film formed on the surface of said copper pad to prevent diffusion of copper;a metal film formed on the surface of said copper diffusion preventing

1. A semiconductor device in which a semiconductor element having a copper pad is mounted on a wiring substrate, comprising:copper diffusion preventing film formed on the surface of said copper pad to prevent diffusion of copper;a metal film formed on the surface of said copper diffusion preventing film to improve adhesion between said copper diffusion preventing film and a metal wire; andsaid metal wire electrically connected to said copper pad with said copper diffusion preventing film and said metal film interposed therebetween,wherein said semiconductor element is mounted on said wiring substrate and connected to said metal wire, andsaid copper diffusion preventing film contains at least one of Ni, Cr, TiN, TaN, Ta, Nb, and WN, and said metal film contains one of Au and Pd. 2. A semiconductor device in which a semiconductor element having a copper pad is mounted on a wiring substrate, comprising:a copper diffusion preventing film formed directly on at least a part of the surface of said copper pad to prevent diffusion of copper such that the copper diffusion preventing film is in direct contact with the at least a part of the surface of the copper pad; anda metal bump electrically connected to said copper pad with said copper diffusion preventing film interposed therebetween,wherein said semiconductor element is mounted on said wiring substrate via said metal bump,said metal bump contains gold, andone of a stacked film of Ti, Ni, and Pd, a stacked film of Ti, Ni, and Au, a stacked film of TiW and Au, and a stacked film of TiW and Pd is formed between said copper diffusion preventing film and said metal bump. 3. A device according to claim 2, wherein said copper diffusion preventing film contains at least one of Ni, Cr, TiN, TaN, Ta, Nb, and WN. 4. A semiconductor device in which a semiconductor element having a copper pad is mounted on a wiring substrate, comprising:a passivation film formed on the copper pad and having an opening to expose the surface of the copper pad;a copper diffusion preventing film formed directly on a part of the surface of said copper pad via the opening of the passivation film and formed on the entire inner surface of the opening to prevent diffusion of copper such that the copper diffusion preventing film is in direct contact with the part of the surface of the copper pad; anda metal bump electrically connected to said copper pad with said copper diffusion preventing film interposed therebetween,wherein said semiconductor element is mounted on said wiring substrate via said metal bump,said metal bump contains solder, andone of a stacked film of Ti and Ni, a stacked film of Ti, Ni, and Pd, a stacked film of Ti, Ni, and Au, a stacked film of Cr and Ni, a stacked film of Cr and Au, a stacked film of Cr, Ni, and Au, a stacked film of Cr, Ni, and Pd, a stacked film of Ti and Cu, a stacked film of Ti, Cu, and Au, a stacked film of Cr and Cu, and a stacked film of Cr, Cu, and Au is formed between said copper diffusion preventing film and said metal bump. 5. A device according to claim 4, wherein said copper diffusion preventing film contains at least one of Ni, Cr, TiN, TaN, Ta, Nb, and WN. 6. A semiconductor device in which a semiconductor element having a copper pad is mounted on a wiring substrate, comprising:a copper diffusion preventing film formed on the surface of said copper pad to prevent diffusion of copper;a metal film formed on the surface of said copper diffusion preventing film to improve adhesion between said copper diffusion preventing film and a metal wire; andsaid metal wire electrically connected to said copper pad with said copper diffusion preventing film and said metal film interposed therebetween,wherein said semiconductor element is mounted on said wiring substrate and connected to said metal wire, andsaid copper diffusion preventing film contains at least one of Ni, Cr, TiN, TaN, Ta, Nb, and WN, and said metal film is one of an Au film and a Pd film.