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Disclosed is a method for forming a heat sink laminate and a heat sink laminate formed by the method. In the method a particle mixture is formed from a metal, an alloy or mixtures thereof with a ceramic or mixture of ceramics. The mixture is kinetically sprayed onto a first side of a dielectric mate

Disclosed is a method for forming a heat sink laminate and a heat sink laminate formed by the method. In the method a particle mixture is formed from a metal, an alloy or mixtures thereof with a ceramic or mixture of ceramics. The mixture is kinetically sprayed onto a first side of a dielectric material to form a metal matrix composite layer. The second side of the dielectric material is thermally coupled to a heat sink baseplate, thereby forming the heat sink laminate.

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1. A method of forming a heat sink laminate comprising the steps of:a) providing a layer of a dielectric material having a first side opposite a second side;b) entraining a particle mixture comprising at least one of a metal, an alloy or mixtures thereof and a ceramic or mixture of ceramics into a f

1. A method of forming a heat sink laminate comprising the steps of:a) providing a layer of a dielectric material having a first side opposite a second side;b) entraining a particle mixture comprising at least one of a metal, an alloy or mixtures thereof and a ceramic or mixture of ceramics into a flow of a gas, the gas at a temperature insufficient to cause thermal softening of the particle mixture;c) directing the particle mixture entrained in the flow of gas through a supersonic nozzle placed opposite the first side of the dielectric material and accelerating the particle mixture to a velocity sufficient to result in adherence of the particle mixture onto the first side of the dielectric material and thereby forming a metal matrix composite layer on the first side of the dielectric material; andd) thermally coupling the second side of the dielectric material to a heat sink baseplate, thereby forming the heat sink laminate. 2. The method of claim 1, wherein step a) comprises providing a layer comprising alumina, aluminum nitride, beryllium oxide or a mixture thereof. 3. The method of claim 1, wherein step a) further comprises providing a layer of a dielectric material having a thickness of from 3/1000 to 40/1000 of an inch. 4. The method of claim 1, wherein step b) comprises entraining a particle mixture comprising at least one of aluminum, copper, tin, an alloy or mixtures thereof and a ceramic or mixture of ceramics into the flow of the gas. 5. The method of claim 1, wherein step b) comprises entraining a particle mixture comprising at least one of a metal, an alloy or mixtures thereof and a ceramic comprising diamond, aluminum nitride, silicon carbide, or mixtures thereof into the flow of the gas. 6. The method of claim 1, wherein step b) comprises entraining a particle mixture having particles with a nominal average diameter of from 50 to 106 microns and comprising at least one of a metal, an alloy or mixtures thereof and a ceramic or mixture of ceramics into the flow of the gas. 7. The method of claim 1, wherein step b) comprises entraining a particle mixture comprising at least one of a metal, an alloy or mixtures thereof and a ceramic or mixture of ceramics into a flow of a gas, the gas at a temperature of from 100 to 1700 degrees Celsius. 8. The method of claim 1, wherein step b) comprises entraining a particle mixture comprising from 70 to 30 percent by weight based on the total weight of the mixture of at least one of a metal, an alloy or mixtures thereof and from 30 to 70 percent by weight based on the total weight of the mixture of a ceramic or mixture of ceramics into the flow of the gas. 9. The method of claim 1, wherein step c) comprises accelerating the particle mixture to a velocity of from 300 to 1200 meters per second. 10. The method of claim 1, wherein step c) comprises forming a metal matrix composite layer having a thickness of from 0.5 to 4.0 millimeters. 11. The method of claim 1, wherein step d) comprises attaching the heat sink baseplate directly to the second side of the dielectric material. 12. The method of claim 1, wherein step d) further comprises entraining a particle mixture comprising a metal, an alloy or mixtures thereof and a ceramic or mixture of ceramics into a flow of a gas, the gas at a temperature insufficient to cause thermal softening of the particle mixture;directing the particle mixture entrained in the flow of gas through a supersonic nozzle placed opposite one of the second side of the dielectric material or the heat sink baseplate and accelerating the particle mixture to a velocity sufficient to result in adherence of the particle mixture onto either the second side of the dielectric material or the baseplate, thereby forming a second metal matrix composite layer; andthen directly attaching the other of the second side of the dielectric material or the baseplate to the second metal matrix composite layer. 13. The method of claim 1, comprising the further step of providing an a ttachment layer on the metal matrix composite layer. 14. The method of claim 13, further comprising entraining a particle mixture comprising a metal, an alloy or mixtures thereof into a flow of a gas, the gas at a temperature insufficient to cause thermal softening of the particle mixture;directing the particle mixture entrained in the flow of gas through a supersonic nozzle placed opposite the metal matrix composite layer and accelerating the particle mixture to a velocity sufficient to result in adherence of the particle mixture onto the metal matrix composite layer, thereby forming the attachment layer. 15. The method of claim 13, comprising the further step of securing a silicon chip to the attachment layer. 16. The method of claim 15, comprising soldering the silicon chip to the attachment layer. 17. The method of claim 1, comprising the further step of maintaining the heat sink laminate at a temperature of at least 100 degrees Celsius in an atmosphere comprising air, an inert gas, or mixtures thereof for a period of time sufficient to increase the thermal conductivity of the heat sink laminate. 18. The method of claim 17, comprising maintaining the heat sink laminate in an argon atmosphere. 19. The method of claim 17, comprising maintaining the heat sink laminate at a temperature of at least 100 degrees Celsius for a period of time from 1 to 6 hours. 20. A heat sink laminate comprising a kinetically sprayed metal matrix composite layer on a first side of a dielectric material and a heat sink baseplate thermally coupled to a second side of said dielectric material, said second side opposite said first side. 21. The heat sink laminate of claim 20, wherein said metal matrix composite layer comprises a metal, an alloy, or mixtures thereof and a ceramic or mixture of ceramics. 22. The heat sink laminate of claim 20, wherein said metal matrix composite layer comprises from 80 to 30 percent by weight of least one of a metal, an alloy or mixtures thereof and from 20 to 70 percent by weight of a ceramic or mixture of ceramics. 23. The heat sink laminate of claim 20, wherein said metal matrix composite layer is from 0.5 to 4.0 millimeters thick. 24. The heat sink laminate of claim 20, wherein said metal matrix composite layer comprises aluminum, copper, tin, steel, or mixtures thereof. 25. The heat sink laminate of claim 20, wherein said metal matrix composite layer comprises diamond, aluminum nitride, silicon carbide, and mixtures thereof. 26. The heat sink laminate of claim 20, wherein said dielectric material comprises alumina, aluminum nitride, beryllium oxide, or mixtures thereof. 27. The heat sink laminate of claim 20, wherein said dielectric material has a thickness of from 3/1000 to 40/1000 of an inch. 28. The heat sink laminate of claim 20, further comprising an attachment layer on said metal matrix composite layer. 29. The heat sink laminate of claim 28, wherein said attachment layer comprises a metal, an alloy, or a mixture thereof. 30. The heat sink laminate of claim 29, wherein said attachment layer comprises a metal, an alloy, or a mixture thereof kinetically sprayed onto said metal matrix composite layer. 31. The heat sink laminate of claim 28, further comprising a silicon chip secured to said attachment layer. 32. The heat sink laminate of claim 31, comprising said silicon chip soldered to said attachment layer. 33. The heat sink laminate of claim 20, wherein said heat sink baseplate is directly attached to said second side of said dielectric material. 34. The heat sink laminate of claim 20, further comprising a second metal matrix composite layer kinetically sprayed onto one of said second side of said dielectric material or said heat sink baseplate and attached to the other of said second side of said dielectric material or said heat sink baseplate.